{"id":"https://openalex.org/W1985387773","doi":"https://doi.org/10.1063/1.351481","title":"Photocurrent multiplication in a hydrogenated amorphous silicon-based p-i-n junction with an a-SiN:H layer","display_name":"Photocurrent multiplication in a hydrogenated amorphous silicon-based p-i-n junction with an a-SiN:H layer","publication_year":1992,"publication_date":"1992-10-01","ids":{"openalex":"https://openalex.org/W1985387773","doi":"https://doi.org/10.1063/1.351481","mag":"1985387773"},"language":"en","primary_location":{"id":"doi:10.1063/1.351481","doi":"https://doi.org/10.1063/1.351481","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.351481","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000847528","display_name":"Masashi Yoshimi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Yoshimi","raw_affiliation_strings":["Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080674141","display_name":"T. Ishiko","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Ishiko","raw_affiliation_strings":["Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037421821","display_name":"Kiminori Hattori","orcid":"https://orcid.org/0000-0003-2684-3164","observed_orcids":["https://orcid.org/0000-0003-2684-3164"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Hattori","raw_affiliation_strings":["Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060412731","display_name":"H. Okamoto","orcid":"https://orcid.org/0000-0002-0723-7049","observed_orcids":["https://orcid.org/0000-0002-0723-7049"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Okamoto","raw_affiliation_strings":["Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110046439","display_name":"Yoshihiro Hamakawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Hamakawa","raw_affiliation_strings":["Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan","institution_ids":["https://openalex.org/I98285908"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I98285908"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.8542,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.8210924,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"72","issue":"7","first_page":"3186","last_page":"3193"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.7554000020027161,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.7554000020027161,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.08049999922513962,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.03539999946951866,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/photocurrent-multiplication","display_name":"photocurrent multiplication","score":0.996999979019165},{"id":"https://openalex.org/keywords/hydrogenated-amorphous-silicon","display_name":"hydrogenated amorphous silicon","score":0.9480000138282776},{"id":"https://openalex.org/keywords/p-i-n-junction","display_name":"p-i-n junction","score":0.8970000147819519},{"id":"https://openalex.org/keywords/heterojunction-photodiodes","display_name":"heterojunction photodiodes","score":0.8949999809265137},{"id":"https://openalex.org/keywords/external-quantum-efficiency","display_name":"external quantum efficiency","score":0.7799999713897705},{"id":"https://openalex.org/keywords/reverse-bias","display_name":"reverse bias","score":0.5630000233650208},{"id":"https://openalex.org/keywords/device-modeling","display_name":"device modeling","score":0.7039999961853027},{"id":"https://openalex.org/keywords/solid-state-imagers","display_name":"solid-state imagers","score":0.6449999809265137}],"concepts":[{"id":"https://openalex.org/C2779845233","wikidata":"https://www.wikidata.org/wiki/Q3381567","display_name":"Photocurrent","level":2,"score":0.849743127822876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7189163565635681},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.702703595161438},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6822177767753601},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.6343555450439453},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.614398717880249},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5422145128250122},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.538595974445343},{"id":"https://openalex.org/C201999631","wikidata":"https://www.wikidata.org/wiki/Q2601129","display_name":"Photoconductivity","level":2,"score":0.528888463973999},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5075101256370544},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.5049434304237366},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.44555217027664185},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.26352667808532715},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17277726531028748},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.09880676865577698}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.351481","doi":"https://doi.org/10.1063/1.351481","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.351481","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W378256193","https://openalex.org/W2003038623","https://openalex.org/W2008720263","https://openalex.org/W2011040066","https://openalex.org/W2041704044","https://openalex.org/W2044224557","https://openalex.org/W2063113632","https://openalex.org/W2074877749","https://openalex.org/W2135881794","https://openalex.org/W2152844948","https://openalex.org/W2314021773","https://openalex.org/W2320027065"],"related_works":["https://openalex.org/W2017345922","https://openalex.org/W1993569714","https://openalex.org/W4231939422","https://openalex.org/W2464889742","https://openalex.org/W2314021773","https://openalex.org/W2046673796","https://openalex.org/W2110546600","https://openalex.org/W1995887223","https://openalex.org/W2017563325","https://openalex.org/W2043146228"],"abstract_inverted_index":{"Photocurrent":[0],"multiplication":[1,44],"has":[2,29,34,94],"been":[3,30,35,95],"observed":[4],"in":[5,25,103],"a":[6,14,82,134,142],"hydrogenated":[7],"amorphous":[8],"silicon-based":[9],"p-i/a-SiN:H/i-n":[10],"structure":[11,76],"junction":[12,27],"under":[13,97],"reverse":[15],"biased":[16],"condition.":[17],"A":[18,60],"systematic":[19],"investigation":[20],"on":[21,63],"the":[22,38,41,47,56,64,67,74,98,104,121],"photocurrent":[23],"characteristics":[24],"this":[26],"system":[28],"carried":[31],"out.":[32],"It":[33],"shown":[36],"from":[37,46],"analysis":[39],"of":[40,51,66,85,111,137],"results":[42],"that":[43],"arises":[45],"interband":[48],"tunneling":[49],"injection":[50],"valence":[52],"band":[53],"\u2018\u2018electron\u2019\u2019":[54],"through":[55],"a-SiN:H":[57,109],"barrier":[58],"layer.":[59],"device":[61,75,86,131],"modeling":[62],"basis":[65],"experimental":[68],"data":[69],"permits":[70],"us":[71],"to":[72],"design":[73],"for":[77,145],"achieving":[78],"better":[79],"performances.":[80],"As":[81],"preliminary":[83],"optimization":[84],"structure,":[87],"an":[88,108],"external":[89],"quantum":[90],"efficiency":[91],"exceeding":[92],"70":[93],"obtained":[96],"operation":[99],"voltage":[100],"30":[101],"V":[102],"heterojunction":[105],"photodiode":[106],"having":[107],"(thickness":[110],"40":[112],"nm":[113],"with":[114],"optical":[115],"energy":[116],"gap":[117],"2.1":[118],"eV)":[119],"at":[120],"p":[122],"a-SiC:H/i":[123],"a-Si:H":[124],"interface.":[125],"The":[126],"proposed":[127],"highly":[128],"sensitive":[129],"photomultiplier":[130],"might":[132],"have":[133],"wide":[135],"variety":[136],"application":[138],"fields":[139],"such":[140],"as":[141],"solid-state":[143],"imager":[144],"high-definition":[146],"televisions,":[147],"etc.":[148]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}