{"id":"https://openalex.org/W1985363363","doi":"https://doi.org/10.1109/eptc.2011.6184410","title":"Newly developed in-situ formation of SnAg and SnAgCu solder on copper pillar bump","display_name":"Newly developed in-situ formation of SnAg and SnAgCu solder on copper pillar bump","publication_year":2011,"publication_date":"2011-12-01","ids":{"openalex":"https://openalex.org/W1985363363","doi":"https://doi.org/10.1109/eptc.2011.6184410","mag":"1985363363"},"language":"en","primary_location":{"id":"doi:10.1109/eptc.2011.6184410","doi":"https://doi.org/10.1109/eptc.2011.6184410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eptc.2011.6184410","pdf_url":null,"source":{"id":"https://openalex.org/S4363608031","display_name":"IEEE Electronics Packaging Technology Conference (EPTC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE 13th Electronics Packaging Technology Conference","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102113678","display_name":"Fengwei Dai","orcid":"https://orcid.org/0000-0002-5396-8563","observed_orcids":["https://orcid.org/0000-0002-5396-8563"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fengwei Dai","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101795019","display_name":"Daquan Yu","orcid":"https://orcid.org/0000-0001-8065-2612","observed_orcids":["https://orcid.org/0000-0001-8065-2612"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Daquan Yu","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100699028","display_name":"Wen Yin","orcid":"https://orcid.org/0000-0002-7110-9471","observed_orcids":["https://orcid.org/0000-0002-7110-9471"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Yin","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111771398","display_name":"Ning Zhao","orcid":"https://orcid.org/0009-0002-7333-9024","observed_orcids":["https://orcid.org/0009-0002-7333-9024"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Zhao","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109107638","display_name":"Lixi Wan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lixi Wan","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, No. 3, BeiTuCheng West Road, Chaoyang district, Beijing, 100029, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064069283","display_name":"Han Yu","orcid":"https://orcid.org/0000-0001-6893-8650","observed_orcids":["https://orcid.org/0000-0001-6893-8650","https://orcid.org/0009-0000-0109-6436"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Han Yu","raw_affiliation_strings":["Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032681906","display_name":"Su Wang","orcid":"https://orcid.org/0000-0002-3167-6420","observed_orcids":["https://orcid.org/0000-0002-3167-6420"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Su Wang","raw_affiliation_strings":["Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113542165","display_name":"Jiangyan Sun","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jiangyan Sun","raw_affiliation_strings":["Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Company Limited, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Shanghai Sinyang Semiconductor Materials Co., Ltd, No.1268 WenheRoad, Songjiang District, 201616, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8473,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.63415957,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"175","last_page":"179"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11200","display_name":"Electrodeposition and Electroless Coatings","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sn-ag-solder","display_name":"Sn-Ag solder","score":0.9739999771118164},{"id":"https://openalex.org/keywords/sn-ag-cu-solder","display_name":"Sn-Ag-Cu solder","score":0.9909999966621399},{"id":"https://openalex.org/keywords/copper-pillar-bumps","display_name":"copper pillar bumps","score":0.8389999866485596},{"id":"https://openalex.org/keywords/microalloying","display_name":"microalloying","score":0.9350000023841858},{"id":"https://openalex.org/keywords/intermetallic-compounds","display_name":"intermetallic compounds","score":0.7179999947547913},{"id":"https://openalex.org/keywords/thermal-cycling-reliability","display_name":"thermal cycling reliability","score":0.6629999876022339},{"id":"https://openalex.org/keywords/high-density-packaging","display_name":"high-density packaging","score":0.5419999957084656}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.845088005065918},{"id":"https://openalex.org/C50296614","wikidata":"https://www.wikidata.org/wiki/Q211387","display_name":"Soldering","level":2,"score":0.8364013433456421},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.647747278213501},{"id":"https://openalex.org/C51807945","wikidata":"https://www.wikidata.org/wiki/Q3503392","display_name":"Electroplating","level":3,"score":0.6275400519371033},{"id":"https://openalex.org/C125619702","wikidata":"https://www.wikidata.org/wiki/Q7783038","display_name":"Thermal copper pillar bump","level":5,"score":0.6227147579193115},{"id":"https://openalex.org/C179111330","wikidata":"https://www.wikidata.org/wiki/Q901525","display_name":"Whisker","level":2,"score":0.6117229461669922},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.6035248041152954},{"id":"https://openalex.org/C27501479","wikidata":"https://www.wikidata.org/wiki/Q428069","display_name":"Intermetallic","level":3,"score":0.5814406871795654},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.49449798464775085},{"id":"https://openalex.org/C2778413121","wikidata":"https://www.wikidata.org/wiki/Q2136790","display_name":"Reflow soldering","level":3,"score":0.4919554889202118},{"id":"https://openalex.org/C79072407","wikidata":"https://www.wikidata.org/wiki/Q432439","display_name":"Flip chip","level":4,"score":0.47950249910354614},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.4519890248775482},{"id":"https://openalex.org/C94709252","wikidata":"https://www.wikidata.org/wiki/Q570628","display_name":"Ball grid array","level":3,"score":0.4484192132949829},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3550838232040405},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.32564640045166016},{"id":"https://openalex.org/C2780026712","wikidata":"https://www.wikidata.org/wiki/Q37756","display_name":"Alloy","level":2,"score":0.17548993229866028},{"id":"https://openalex.org/C68928338","wikidata":"https://www.wikidata.org/wiki/Q131790","display_name":"Adhesive","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/eptc.2011.6184410","doi":"https://doi.org/10.1109/eptc.2011.6184410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eptc.2011.6184410","pdf_url":null,"source":{"id":"https://openalex.org/S4363608031","display_name":"IEEE Electronics Packaging Technology Conference (EPTC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE 13th Electronics Packaging Technology Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1592985487","https://openalex.org/W2038820347","https://openalex.org/W2059569668","https://openalex.org/W2067486409","https://openalex.org/W2070298394","https://openalex.org/W2100357216","https://openalex.org/W2103268502","https://openalex.org/W2107123813","https://openalex.org/W2140675669","https://openalex.org/W2146393746","https://openalex.org/W6675483225"],"related_works":["https://openalex.org/W2014587141","https://openalex.org/W2061009164","https://openalex.org/W2011908104","https://openalex.org/W2077820617","https://openalex.org/W2015839073","https://openalex.org/W2009983660","https://openalex.org/W2144432808","https://openalex.org/W2032140673","https://openalex.org/W2120961267","https://openalex.org/W3010531757"],"abstract_inverted_index":{"The":[0,59,72],"trend":[1],"to":[2,42,159],"smaller":[3],"and":[4,15,45,52,63,86,122,133,143],"lighter":[5],"electronics":[6],"has":[7],"accentuated":[8],"efforts":[9],"towards":[10],"high":[11],"density,":[12,30],"increased":[13],"performance":[14],"miniaturization":[16],"in":[17,56,148],"packaging":[18],"technology.":[19],"Fine":[20],"pitch":[21],"micro":[22],"bump":[23,48,69,110],"interconnection":[24],"can":[25],"greatly":[26],"improve":[27],"the":[28,91,94,107,141,149,179,182],"interconnect":[29],"thereby":[31],"becoming":[32],"a":[33,114],"mainstream":[34],"technology":[35],"of":[36,61,93,181],"high-density":[37],"packaging.":[38],"A":[39],"new":[40,73],"method":[41],"fabricate":[43],"binary":[44],"ternary":[46],"solder":[47,109,142,150,183],"based":[49],"on":[50,66,178],"electroplating":[51],"micro-alloying":[53],"are":[54,88],"introduced":[55],"present":[57],"paper.":[58],"formation":[60],"SnAg":[62],"SnAgCu":[64],"alloys":[65],"copper":[67,99],"pillar":[68,100],"is":[70,76,111],"demonstrated.":[71],"manufacturing":[74],"process":[75],"explained":[77],"as":[78,84],"follows.":[79],"Firstly,":[80],"alloying":[81],"metals":[82],"such":[83],"Ag":[85,132],"Cu":[87,134],"deposited":[89],"at":[90],"surface":[92,180],"electroplated":[95],"Sn":[96,137],"layer":[97],"over":[98,136],"by":[101],"physics":[102],"vapor":[103],"deposition":[104],"(PVD).":[105],"Then,":[106],"multi-component":[108],"formed":[112,144],"through":[113],"reflow":[115],"process.":[116],"By":[117],"scanning":[118],"electron":[119],"microscope":[120],"(SEM)":[121],"Energy":[123],"Dispersive":[124],"Spectrum":[125],"(EDS)":[126],"analysis,":[127],"it":[128],"was":[129,164],"confirmed":[130],"that":[131],"layers":[135],"have":[138],"dissolved":[139],"into":[140],"intermetallic":[145],"compound":[146],"(IMC)":[147],"after":[151],"first":[152],"reflow.":[153],"After":[154],"1000":[155],"temperature":[156],"cycles":[157],"up":[158],"-50~85\u00b0C,":[160],"Ag3Sn":[161],"phase":[162],"precipitation":[163],"observed":[165],"having":[166],"stick":[167],"or":[168],"island":[169],"shapes.":[170],"But":[171],"we":[172],"did":[173],"not":[174],"observe":[175],"tin":[176],"whisker":[177],"bump.":[184]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-21T09:56:26.102985","created_date":"2016-06-24T00:00:00"}