{"id":"https://openalex.org/W1985162339","doi":"https://doi.org/10.1016/0026-2692(95)00104-2","title":"Dielectric breakdown I: A review of oxide breakdown","display_name":"Dielectric breakdown I: A review of oxide breakdown","publication_year":1996,"publication_date":"1996-10-01","ids":{"openalex":"https://openalex.org/W1985162339","doi":"https://doi.org/10.1016/0026-2692(95)00104-2","mag":"1985162339"},"language":"en","primary_location":{"id":"doi:10.1016/0026-2692(95)00104-2","doi":"https://doi.org/10.1016/0026-2692(95)00104-2","is_oa":true,"landing_page_url":"https://doi.org/10.1016/0026-2692(95)00104-2","pdf_url":"https://linkinghub.elsevier.com/science/article/pii/0026269295001042","source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://linkinghub.elsevier.com/science/article/pii/0026269295001042","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074850783","display_name":"J.F. Verweij","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I94624287","display_name":"University of Twente","ror":"https://ror.org/006hf6230","country_code":"NL","type":"education","lineage":["https://openalex.org/I94624287"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"J.F. Verweij","raw_affiliation_strings":["MESA Research Institute, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MESA Research Institute, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands","institution_ids":["https://openalex.org/I94624287"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071866707","display_name":"Johan H. Klootwijk","orcid":"https://orcid.org/0000-0002-9958-6587","observed_orcids":["https://orcid.org/0000-0002-9958-6587"]},"institutions":[{"id":"https://openalex.org/I94624287","display_name":"University of Twente","ror":"https://ror.org/006hf6230","country_code":"NL","type":"education","lineage":["https://openalex.org/I94624287"]}],"countries":["NL"],"is_corresponding":true,"raw_author_name":"J.H. Klootwijk","raw_affiliation_strings":["MESA Research Institute, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MESA Research Institute, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands","institution_ids":["https://openalex.org/I94624287"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5071866707"],"corresponding_institution_ids":["https://openalex.org/I94624287"],"apc_list":{"value":2390,"currency":"USD","value_usd":2390},"apc_paid":null,"fwci":0.4661,"has_fulltext":true,"cited_by_count":138,"citation_normalized_percentile":{"value":0.61847668,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"27","issue":"7","first_page":"611","last_page":"622"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric-breakdown","display_name":"dielectric breakdown","score":0.9950000047683716},{"id":"https://openalex.org/keywords/oxide-thin-films","display_name":"oxide thin films","score":0.7829999923706055},{"id":"https://openalex.org/keywords/silica","display_name":"silica","score":0.8479999899864197},{"id":"https://openalex.org/keywords/silicon-mos-devices","display_name":"silicon MOS devices","score":0.3700000047683716}],"concepts":[{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.777095377445221},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6684796214103699},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6541121006011963},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6432509422302246},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.6086878776550293},{"id":"https://openalex.org/C2984221369","wikidata":"https://www.wikidata.org/wiki/Q422584","display_name":"Electric breakdown","level":3,"score":0.5807315111160278},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48171931505203247},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46791961789131165},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.4485020041465759},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.42485353350639343},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.42166322469711304},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3433217406272888},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.33762890100479126},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20049989223480225},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07592043280601501},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06471824645996094},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05122414231300354},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1016/0026-2692(95)00104-2","doi":"https://doi.org/10.1016/0026-2692(95)00104-2","is_oa":true,"landing_page_url":"https://doi.org/10.1016/0026-2692(95)00104-2","pdf_url":"https://linkinghub.elsevier.com/science/article/pii/0026269295001042","source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},{"id":"pmh:oai:ris.utwente.nl:openaire_cris_publications/80fd2560-1c37-4865-8c7c-51ea73140e27","doi":null,"is_oa":false,"landing_page_url":"https://research.utwente.nl/en/publications/80fd2560-1c37-4865-8c7c-51ea73140e27","pdf_url":null,"source":{"id":"https://openalex.org/S4406922991","display_name":"University of Twente Research Information","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Verweij, J F & Klootwijk, J H 1996, 'Dielectric breakdown I: A review of oxide breakdown', Microelectronics, vol. 27, no. 7, pp. 611-622. https://doi.org/10.1016/0026-2692(95)00104-2","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:ut:oai:ris.utwente.nl:publications/80fd2560-1c37-4865-8c7c-51ea73140e27","doi":null,"is_oa":true,"landing_page_url":"https://research.utwente.nl/en/publications/80fd2560-1c37-4865-8c7c-51ea73140e27","pdf_url":null,"source":{"id":"https://openalex.org/S4406922991","display_name":"University of Twente Research Information","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Microelectronics journal, 27(7), 611 - 622. Elsevier","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1016/0026-2692(95)00104-2","doi":"https://doi.org/10.1016/0026-2692(95)00104-2","is_oa":true,"landing_page_url":"https://doi.org/10.1016/0026-2692(95)00104-2","pdf_url":"https://linkinghub.elsevier.com/science/article/pii/0026269295001042","source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1985162339.pdf","grobid_xml":"https://content.openalex.org/works/W1985162339.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1653331221","https://openalex.org/W1964066350","https://openalex.org/W1969583784","https://openalex.org/W1982373709","https://openalex.org/W1990600621","https://openalex.org/W2011782837","https://openalex.org/W2020454252","https://openalex.org/W2021750186","https://openalex.org/W2033936392","https://openalex.org/W2044062799","https://openalex.org/W2059537683","https://openalex.org/W2059795568","https://openalex.org/W2086205187","https://openalex.org/W2103893605","https://openalex.org/W2104143331","https://openalex.org/W2108898163","https://openalex.org/W2128875936","https://openalex.org/W2129251725","https://openalex.org/W2132110076","https://openalex.org/W2132218751","https://openalex.org/W2157050789","https://openalex.org/W2160937327","https://openalex.org/W2161606023","https://openalex.org/W2164940828","https://openalex.org/W2491096896","https://openalex.org/W6679311099","https://openalex.org/W6679425261","https://openalex.org/W6827803820"],"related_works":["https://openalex.org/W1976287906","https://openalex.org/W2090408818","https://openalex.org/W2160160893","https://openalex.org/W2141207883","https://openalex.org/W2522977679","https://openalex.org/W1984011804","https://openalex.org/W2032994705","https://openalex.org/W1571304730","https://openalex.org/W1988520680","https://openalex.org/W4256377250"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":13},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":11},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":15},{"year":2015,"cited_by_count":7},{"year":2014,"cited_by_count":10},{"year":2013,"cited_by_count":7},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}