{"id":"https://openalex.org/W1982996553","doi":"https://doi.org/10.1063/1.103474","title":"Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy","display_name":"Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy","publication_year":1990,"publication_date":"1990-09-24","ids":{"openalex":"https://openalex.org/W1982996553","doi":"https://doi.org/10.1063/1.103474","mag":"1982996553"},"language":"en","primary_location":{"id":"doi:10.1063/1.103474","doi":"https://doi.org/10.1063/1.103474","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.103474","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W1982996553"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033474096","display_name":"A.C. Warren","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. C. Warren","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076831896","display_name":"Jerry M. Woodall","orcid":"https://orcid.org/0000-0003-3347-9591","observed_orcids":["https://orcid.org/0000-0003-3347-9591"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. M. Woodall","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080164089","display_name":"J. L. Freeouf","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. L. Freeouf","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075084290","display_name":"D. Grischkowsky","orcid":"https://orcid.org/0000-0001-6460-7512","observed_orcids":["https://orcid.org/0000-0001-6460-7512"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Grischkowsky","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111692859","display_name":"David T. McInturff","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. T. McInturff","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109092733","display_name":"M. R. Melloch","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. R. Melloch","raw_affiliation_strings":["School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108537914","display_name":"N. \u014ctsuka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. Otsuka","raw_affiliation_strings":["Materials Engineering, Purdue University, West Lafayette, Indiana 47907"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Engineering, Purdue University, West Lafayette, Indiana 47907","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":41.1791,"has_fulltext":false,"cited_by_count":440,"citation_normalized_percentile":{"value":0.99969243,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"57","issue":"13","first_page":"1331","last_page":"1333"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0071000000461936,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.005400000140070915,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/arsenic-precipitates","display_name":"arsenic precipitates","score":0.9919999837875366},{"id":"https://openalex.org/keywords/semi-insulating-gaas","display_name":"semi-insulating GaAs","score":0.8659999966621399},{"id":"https://openalex.org/keywords/low-temperature-buffer-layer","display_name":"low-temperature buffer layer","score":0.9279999732971191},{"id":"https://openalex.org/keywords/space-charge-region","display_name":"depletion region","score":0.8450000286102295},{"id":"https://openalex.org/keywords/doping","display_name":"doping","score":0.6069999933242798},{"id":"https://openalex.org/keywords/annealing-temperature","display_name":"annealing temperature","score":0.8140000104904175}],"concepts":[{"id":"https://openalex.org/C502230775","wikidata":"https://www.wikidata.org/wiki/Q871","display_name":"Arsenic","level":2,"score":0.8172370195388794},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7711913585662842},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7258018255233765},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6681678295135498},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.6053345799446106},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5363537073135376},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5340952277183533},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4729720652103424},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.43833082914352417},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4137972891330719},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3558124899864197},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18772530555725098},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.18311908841133118},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1614973545074463},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.058639079332351685},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.05501800775527954},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.103474","doi":"https://doi.org/10.1063/1.103474","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.103474","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1970964430","https://openalex.org/W1976995580","https://openalex.org/W2007566610","https://openalex.org/W2020226297","https://openalex.org/W2020591820","https://openalex.org/W2031702610","https://openalex.org/W2039853006","https://openalex.org/W2056323984","https://openalex.org/W2057665591"],"related_works":["https://openalex.org/W2017030201","https://openalex.org/W2009960435","https://openalex.org/W2009049592","https://openalex.org/W2031005267","https://openalex.org/W2041692110","https://openalex.org/W2315907593","https://openalex.org/W2324547029","https://openalex.org/W2333046304","https://openalex.org/W2086450244","https://openalex.org/W2030424871"],"abstract_inverted_index":{"Arsenic":[0],"precipitates":[1,27,35,50,67,104],"have":[2],"been":[3],"observed":[4],"in":[5,40,62,105],"GaAs":[6],"low-temperature":[7],"buffer":[8],"layers":[9],"(LTBLs)":[10],"used":[11],"as":[12,69,97],"\u2018\u2018substrates\u2019\u2019":[13],"for":[14],"normal":[15],"molecular":[16],"beam":[17],"epitaxy":[18],"growth.":[19],"Transmission":[20],"electron":[21],"microscopy":[22],"has":[23],"shown":[24],"the":[25,46,57,99],"arsenic":[26,66,103],"to":[28,89],"be":[29,60,95],"hexagonal":[30],"phase":[31],"single":[32],"crystals.":[33],"The":[34,53,78],"are":[36],"about":[37],"6\u00b14":[38],"nm":[39],"diameter":[41],"with":[42,73,87],"a":[43],"density":[44],"on":[45,83],"order":[47],"of":[48,56,64,80,102],"1017":[49],"per":[51],"cm3.":[52],"semi-insulating":[54,106],"properties":[55],"LTBL":[58,84],"can":[59],"explained":[61],"terms":[63],"these":[65,81],"acting":[68],"\u2018\u2018buried\u2019\u2019":[70],"Schottky":[71],"barriers":[72],"overlapping":[74],"spherical":[75],"depletion":[76],"regions.":[77],"implications":[79],"results":[82],"resistivity":[85],"stability":[86],"respect":[88],"doping":[90],"and":[91],"anneal":[92],"temperature":[93],"will":[94,98],"discussed":[96],"possible":[100],"role":[101],"liquid-encapsulated":[107],"Czochralski-grown":[108],"bulk":[109],"GaAs.":[110]},"counts_by_year":[{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2016-06-24T00:00:00"}