{"id":"https://openalex.org/W1980162016","doi":"https://doi.org/10.1063/1.3040320","title":"Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment","display_name":"Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment","publication_year":2008,"publication_date":"2008-12-01","ids":{"openalex":"https://openalex.org/W1980162016","doi":"https://doi.org/10.1063/1.3040320","mag":"1980162016"},"language":"en","primary_location":{"id":"doi:10.1063/1.3040320","doi":"https://doi.org/10.1063/1.3040320","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3040320","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W1980162016"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037303921","display_name":"Jong Min Yuk","orcid":"https://orcid.org/0000-0002-4677-7363","observed_orcids":["https://orcid.org/0000-0002-4677-7363"]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. M. Yuk","raw_affiliation_strings":["Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100398118","display_name":"Jeong Yong Lee","orcid":"https://orcid.org/0000-0001-6689-2759","observed_orcids":["https://orcid.org/0000-0001-6689-2759","https://orcid.org/0000-0001-8542-9612"]},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. Y. Lee","raw_affiliation_strings":["Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111768109","display_name":"Y.S. No","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. S. No","raw_affiliation_strings":["Advanced Semiconductor Research Center, Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103003305","display_name":"T. W. Kim","orcid":"https://orcid.org/0009-0001-0915-2217","observed_orcids":["https://orcid.org/0009-0001-0915-2217"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"T. W. Kim","raw_affiliation_strings":["Advanced Semiconductor Research Center, Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5069140582","display_name":"Won Kook Choi","orcid":"https://orcid.org/0000-0003-0759-8896","observed_orcids":["https://orcid.org/0000-0003-0759-8896"]},"institutions":[{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W. K. Choi","raw_affiliation_strings":["Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea","institution_ids":["https://openalex.org/I58716616"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8936,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.69976027,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"93","issue":"22","first_page":"221910","last_page":"221910"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.7343999743461609,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.7343999743461609,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10321","display_name":"Quantum Dots Synthesis And Properties","score":0.041999999433755875,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.029600000008940697,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silica-matrix","display_name":"silica matrix","score":0.7020000219345093},{"id":"https://openalex.org/keywords/phase-transformation","display_name":"phase transformation","score":0.47699999809265137},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.8320000171661377},{"id":"https://openalex.org/keywords/zno-thin-films","display_name":"ZnO thin films","score":0.8960000276565552},{"id":"https://openalex.org/keywords/metal-insulator-transition","display_name":"metal-insulator transition","score":0.6309999823570251},{"id":"https://openalex.org/keywords/transformation-mechanism","display_name":"transformation mechanism","score":0.5429999828338623}],"concepts":[{"id":"https://openalex.org/C175854130","wikidata":"https://www.wikidata.org/wiki/Q98276914","display_name":"Nanocrystal","level":2,"score":0.9035018682479858},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8128330707550049},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7279988527297974},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.6361842155456543},{"id":"https://openalex.org/C61276311","wikidata":"https://www.wikidata.org/wiki/Q624543","display_name":"Monoclinic crystal system","level":3,"score":0.6268554925918579},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.5809521079063416},{"id":"https://openalex.org/C161368742","wikidata":"https://www.wikidata.org/wiki/Q874906","display_name":"High-resolution transmission electron microscopy","level":3,"score":0.5027081966400146},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.48368674516677856},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3817853033542633},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.28449368476867676},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.2347792685031891},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.1511942744255066},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10703587532043457},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.3040320","doi":"https://doi.org/10.1063/1.3040320","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3040320","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1489564279","https://openalex.org/W1965890175","https://openalex.org/W1973935009","https://openalex.org/W2016585938","https://openalex.org/W2021033085","https://openalex.org/W2028751105","https://openalex.org/W2031998749","https://openalex.org/W2036420700","https://openalex.org/W2048083925","https://openalex.org/W2050102431","https://openalex.org/W2056208009","https://openalex.org/W2064527385","https://openalex.org/W2073538552","https://openalex.org/W2078850226","https://openalex.org/W2085805668","https://openalex.org/W2101693658","https://openalex.org/W3013931810"],"related_works":["https://openalex.org/W1994486614","https://openalex.org/W1965890175","https://openalex.org/W2917383791","https://openalex.org/W261624462","https://openalex.org/W2062190121","https://openalex.org/W2124021053","https://openalex.org/W2059041327","https://openalex.org/W1549343537","https://openalex.org/W2078850226","https://openalex.org/W2090540114"],"abstract_inverted_index":{"Transmission":[0],"electron":[1],"microscopy":[2],"(TEM),":[3],"high-resolution":[4],"TEM,":[5],"and":[6,17],"x-ray":[7],"energy":[8],"dispersive":[9],"spectroscopy":[10],"results":[11],"showed":[12],"that":[13],"Zn":[14,45,59,78],"metallic":[15,46,77],"nanocrystals":[16,47,54,79,83],"ZnSiO3":[18,52,82],"insulating":[19,53,81],"nanocrytals":[20],"embedded":[21],"in":[22,65,84],"a":[23,85],"SiO2":[24,86],"matrix":[25,87],"were":[26,48],"created":[27],"from":[28,62,76],"the":[29,66,96,99],"ZnO":[30],"thin":[31],"films":[32],"deposited":[33],"on":[34,95],"n-Si":[35],"(001)":[36],"substrates":[37],"due":[38,88],"to":[39,70,80,89],"rapid":[40,90],"thermal":[41,91],"annealing.":[42],"The":[43,73],"formed":[44],"transformed":[49],"into":[50],"monoclinic":[51],"with":[55],"increasing":[56],"number":[57],"of":[58,98],"atoms":[60],"resulting":[61],"an":[63],"increase":[64],"annealing":[67,92],"time":[68],"up":[69],"10":[71],"min.":[72],"transformation":[74],"mechanisms":[75],"are":[93],"described":[94],"basis":[97],"experimental":[100],"results.":[101]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2016-06-24T00:00:00"}