{"id":"https://openalex.org/W1978744174","doi":"https://doi.org/10.1016/s0022-0248(02)01784-0","title":"Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum","display_name":"Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum","publication_year":2002,"publication_date":"2002-11-04","ids":{"openalex":"https://openalex.org/W1978744174","doi":"https://doi.org/10.1016/s0022-0248(02)01784-0","mag":"1978744174"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(02)01784-0","doi":"https://doi.org/10.1016/s0022-0248(02)01784-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)01784-0","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012824639","display_name":"Yutaka Oyama","orcid":"https://orcid.org/0000-0002-7067-1438","observed_orcids":["https://orcid.org/0000-0002-7067-1438"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yutaka Oyama","raw_affiliation_strings":["Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan","Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009133791","display_name":"Kenji Tezuka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji Tezuka","raw_affiliation_strings":["Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112442911","display_name":"Ken Suto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ken Suto","raw_affiliation_strings":["Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan","Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 02, Sendai 980-8579, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111604787","display_name":"J. Nishizawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Jun-Ichi Nishizawa","raw_affiliation_strings":["Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research Foundation, Semiconductor Research Institute, Kawauchi Aoba, Sendai 980-0862, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5111604787"],"corresponding_institution_ids":[],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":1.0917,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.74300319,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"246","issue":"1-2","first_page":"15","last_page":"20"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8241999745368958,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8241999745368958,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1298000067472458,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13889","display_name":"Advanced Materials and Semiconductor Technologies","score":0.009499999694526196,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.8949999809265137},{"id":"https://openalex.org/keywords/tellurium-doping","display_name":"tellurium doping","score":0.7910000085830688},{"id":"https://openalex.org/keywords/sulfur-doping","display_name":"sulfur doping","score":0.9710000157356262},{"id":"https://openalex.org/keywords/impurity-incorporation","display_name":"impurity incorporation","score":0.8709999918937683},{"id":"https://openalex.org/keywords/triethylgallium","display_name":"triethylgallium","score":0.9430000185966492},{"id":"https://openalex.org/keywords/arsine","display_name":"arsine","score":0.9879999756813049},{"id":"https://openalex.org/keywords/surface-coverage","display_name":"surface coverage","score":0.4309999942779541},{"id":"https://openalex.org/keywords/charge-distribution","display_name":"charge distribution","score":0.8130000233650208},{"id":"https://openalex.org/keywords/electronegativity-difference","display_name":"electronegativity difference","score":0.984000027179718},{"id":"https://openalex.org/keywords/ultra-high-vacuum-deposition","display_name":"ultrahigh vacuum deposition","score":0.5540000200271606}],"concepts":[{"id":"https://openalex.org/C2780464664","wikidata":"https://www.wikidata.org/wiki/Q2346835","display_name":"Triethylgallium","level":5,"score":0.9257407188415527},{"id":"https://openalex.org/C2776776902","wikidata":"https://www.wikidata.org/wiki/Q334599","display_name":"Arsine","level":4,"score":0.8734169006347656},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.8707241415977478},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.720418393611908},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.703406035900116},{"id":"https://openalex.org/C177293861","wikidata":"https://www.wikidata.org/wiki/Q78974","display_name":"Electronegativity","level":2,"score":0.5431503653526306},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4019566774368286},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.36501073837280273},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3123374581336975},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2435818314552307},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18754300475120544},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.1012871265411377},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.09596234560012817},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C2777716191","wikidata":"https://www.wikidata.org/wiki/Q207877","display_name":"Phosphine","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(02)01784-0","doi":"https://doi.org/10.1016/s0022-0248(02)01784-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)01784-0","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320324720","display_name":"Soochow University","ror":"https://ror.org/05t8y2r12"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W334816172","https://openalex.org/W582438357","https://openalex.org/W1660846220","https://openalex.org/W1989452267","https://openalex.org/W2007987260","https://openalex.org/W2023453359","https://openalex.org/W2041292953","https://openalex.org/W2048379006","https://openalex.org/W2053443638","https://openalex.org/W2062283580","https://openalex.org/W2063124878","https://openalex.org/W2083502678","https://openalex.org/W2083952920","https://openalex.org/W2084464267","https://openalex.org/W2088816379","https://openalex.org/W2109363921","https://openalex.org/W2480214026","https://openalex.org/W6836206316"],"related_works":["https://openalex.org/W2007564380","https://openalex.org/W1999593175","https://openalex.org/W2114633385","https://openalex.org/W1994485264","https://openalex.org/W2051979781","https://openalex.org/W2080239931","https://openalex.org/W1963564851","https://openalex.org/W2053253788","https://openalex.org/W1988213175","https://openalex.org/W2027654107"],"abstract_inverted_index":null,"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}