{"id":"https://openalex.org/W1978728654","doi":"https://doi.org/10.1134/1.1403563","title":"Numerical simulation of intrinsic defects in SiO2 and Si3N4","display_name":"Numerical simulation of intrinsic defects in SiO2 and Si3N4","publication_year":2001,"publication_date":"2001-09-01","ids":{"openalex":"https://openalex.org/W1978728654","doi":"https://doi.org/10.1134/1.1403563","mag":"1978728654"},"language":"en","primary_location":{"id":"doi:10.1134/1.1403563","doi":"https://doi.org/10.1134/1.1403563","is_oa":false,"landing_page_url":"https://doi.org/10.1134/1.1403563","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032682324","display_name":"V. A. Gritsenko","orcid":"https://orcid.org/0000-0003-1646-0848","observed_orcids":["https://orcid.org/0000-0003-1646-0848"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210127387","display_name":"Siberian Branch of the Russian Academy of Sciences","ror":"https://ror.org/02frkq021","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210127387"]},{"id":"https://openalex.org/I4210138567","display_name":"Institute of Semiconductor Physics","ror":"https://ror.org/03napcw37","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210138567"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V. A. Gritsenko","raw_affiliation_strings":["Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210127387","https://openalex.org/I4210138567"]},{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210138567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058285249","display_name":"Yu. N. Novikov","orcid":"https://orcid.org/0000-0003-4419-8744","observed_orcids":["https://orcid.org/0000-0003-4419-8744"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210127387","display_name":"Siberian Branch of the Russian Academy of Sciences","ror":"https://ror.org/02frkq021","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210127387"]},{"id":"https://openalex.org/I4210138567","display_name":"Institute of Semiconductor Physics","ror":"https://ror.org/03napcw37","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210138567"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Yu. N. Novikov","raw_affiliation_strings":["Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210127387","https://openalex.org/I4210138567"]},{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210138567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067255641","display_name":"A. V. Shaposhnikov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210127387","display_name":"Siberian Branch of the Russian Academy of Sciences","ror":"https://ror.org/02frkq021","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210127387"]},{"id":"https://openalex.org/I4210138567","display_name":"Institute of Semiconductor Physics","ror":"https://ror.org/03napcw37","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210138567"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A. V. Shaposhnikov","raw_affiliation_strings":["Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, Novosibirsk, 630090, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210127387","https://openalex.org/I4210138567"]},{"raw_affiliation_string":"Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210138567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008572147","display_name":"Yu. N. Morokov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I4210127387","display_name":"Siberian Branch of the Russian Academy of Sciences","ror":"https://ror.org/02frkq021","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210127387"]},{"id":"https://openalex.org/I4210137651","display_name":"Federal Research Center for Information and Computational Technologies","ror":"https://ror.org/02x3mf211","country_code":"RU","type":"facility","lineage":["https://openalex.org/I4210137651"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Yu. N. Morokov","raw_affiliation_strings":["Institute of Computational Technologies, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia","Institute of Computational Technologies, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Computational Technologies, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210127387","https://openalex.org/I4210137651"]},{"raw_affiliation_string":"Institute of Computational Technologies, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I4210137651"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"35","issue":"9","first_page":"997","last_page":"1005"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.4641000032424927,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.4641000032424927,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.15230000019073486,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.07090000063180923,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/native-defects","display_name":"intrinsic defects","score":0.9039999842643738},{"id":"https://openalex.org/keywords/silica","display_name":"silica","score":0.8119999766349792},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"silicon nitride","score":1.0},{"id":"https://openalex.org/keywords/electronic-structure","display_name":"electronic structure","score":0.7369999885559082},{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.6669999957084656},{"id":"https://openalex.org/keywords/electron-capture","display_name":"electron capture","score":0.7170000076293945},{"id":"https://openalex.org/keywords/hole-capture","display_name":"hole capture","score":0.9919999837875366},{"id":"https://openalex.org/keywords/electronic-relaxation","display_name":"electronic relaxation","score":0.5870000123977661},{"id":"https://openalex.org/keywords/atomic-relaxation","display_name":"atomic relaxation","score":0.9340000152587891},{"id":"https://openalex.org/keywords/x-ray-spectra","display_name":"X-ray spectra","score":0.6629999876022339},{"id":"https://openalex.org/keywords/mindo-3","display_name":"MINDO/3","score":0.8389999866485596}],"concepts":[{"id":"https://openalex.org/C2780649890","wikidata":"https://www.wikidata.org/wiki/Q16976492","display_name":"MINDO","level":3,"score":0.8113380074501038},{"id":"https://openalex.org/C2779268580","wikidata":"https://www.wikidata.org/wiki/Q3447087","display_name":"Allowance (engineering)","level":2,"score":0.7139185667037964},{"id":"https://openalex.org/C58312451","wikidata":"https://www.wikidata.org/wiki/Q4817200","display_name":"Atom (system on chip)","level":2,"score":0.6059019565582275},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.5907914042472839},{"id":"https://openalex.org/C4839761","wikidata":"https://www.wikidata.org/wiki/Q212111","display_name":"Spectral line","level":2,"score":0.5863822102546692},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5399605631828308},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.5024046897888184},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4668484330177307},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.4657358229160309},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4487447440624237},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.3437630832195282},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3374706506729126},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.23075199127197266},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19125774502754211},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12379854917526245},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.06576219201087952},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.0},{"id":"https://openalex.org/C77805123","wikidata":"https://www.wikidata.org/wiki/Q161272","display_name":"Social psychology","level":1,"score":0.0},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1134/1.1403563","doi":"https://doi.org/10.1134/1.1403563","is_oa":false,"landing_page_url":"https://doi.org/10.1134/1.1403563","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W2219337","https://openalex.org/W567225573","https://openalex.org/W578482158","https://openalex.org/W1639950733","https://openalex.org/W1967019393","https://openalex.org/W1974211175","https://openalex.org/W1982008340","https://openalex.org/W1989026357","https://openalex.org/W1995539803","https://openalex.org/W1997976344","https://openalex.org/W1998705057","https://openalex.org/W2005535965","https://openalex.org/W2013732865","https://openalex.org/W2014952529","https://openalex.org/W2023271753","https://openalex.org/W2024654410","https://openalex.org/W2029707735","https://openalex.org/W2042021666","https://openalex.org/W2042339914","https://openalex.org/W2046526781","https://openalex.org/W2048702930","https://openalex.org/W2059269053","https://openalex.org/W2063489609","https://openalex.org/W2065018242","https://openalex.org/W2072859362","https://openalex.org/W2075530161","https://openalex.org/W2079044944","https://openalex.org/W2086957099","https://openalex.org/W2103567724","https://openalex.org/W2130908556","https://openalex.org/W2150845166","https://openalex.org/W2151324716","https://openalex.org/W2320223879","https://openalex.org/W2996251579","https://openalex.org/W4243733031","https://openalex.org/W6603636579"],"related_works":["https://openalex.org/W1988057799","https://openalex.org/W2074081039","https://openalex.org/W3026652580","https://openalex.org/W2072331370","https://openalex.org/W2008924362","https://openalex.org/W2034662491","https://openalex.org/W2788581040","https://openalex.org/W2086399735","https://openalex.org/W2011677536","https://openalex.org/W2025961723"],"abstract_inverted_index":{"The":[0,24,60,87],"electronic":[1,78],"structure":[2],"of":[3,28,33,67],"major":[4],"intrinsic":[5],"defects":[6,25],"in":[7,62],"SiO":[8],"2":[9],"and":[10,20,55,79],"Si":[11],"3":[12],"N":[13],"4":[14],"was":[15,82],"calculated":[16,97],"by":[17],"the":[18,21,31,46,51,56],"MINDO/3":[19],"density-functional":[22],"methods.":[23],"that":[26],"are":[27,94],"interest":[29],"from":[30],"standpoint":[32],"their":[34],"ability":[35],"to":[36],"capture":[37],"electrons":[38],"or":[39,71],"holes":[40],"were":[41],"considered;":[42],"these":[43,85],"centers":[44],"include":[45],"three-and":[47],"two-coordinated":[48,57],"silicon":[49],"atoms,":[50],"one-coordinated":[52],"oxygen":[53],"atom,":[54],"nitrogen":[58],"atom.":[59],"gain":[61],"energy":[63],"as":[64],"a":[65,72],"result":[66],"capturing":[68],"an":[69],"electron":[70],"hole":[73],"with":[74,96],"allowance":[75],"made":[76],"for":[77,84,91],"atomic":[80],"relaxation":[81],"determined":[83],"defects.":[86],"experimental":[88],"X-ray":[89],"spectra":[90],"both":[92],"materials":[93],"compared":[95],"spectra.":[98]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}