{"id":"https://openalex.org/W1978618368","doi":"https://doi.org/10.1109/ulis.2015.7063790","title":"Schottky barrier height engineering for next generation DRAM capacitors","display_name":"Schottky barrier height engineering for next generation DRAM capacitors","publication_year":2015,"publication_date":"2015-01-01","ids":{"openalex":"https://openalex.org/W1978618368","doi":"https://doi.org/10.1109/ulis.2015.7063790","mag":"1978618368"},"language":"en","primary_location":{"id":"doi:10.1109/ulis.2015.7063790","doi":"https://doi.org/10.1109/ulis.2015.7063790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ulis.2015.7063790","pdf_url":null,"source":{"id":"https://openalex.org/S4306420416","display_name":"Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077966999","display_name":"Kyuho Cho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyuho Cho","raw_affiliation_strings":["Samsung Electronics, Semiconductor Research Center, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor Research Center, Korea","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003850300","display_name":"Thomas Mikolajick","orcid":"https://orcid.org/0000-0003-3814-0378","observed_orcids":["https://orcid.org/0000-0003-3814-0378"]},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["DE","KR"],"is_corresponding":false,"raw_author_name":"Thomas Mikolajick","raw_affiliation_strings":["NaMLab gGmbH, Dresden, Germanv","Samsung Electronics, Semiconductor Research Center, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH, Dresden, Germanv","institution_ids":["https://openalex.org/I4210122489"]},{"raw_affiliation_string":"Samsung Electronics, Semiconductor Research Center, Korea","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068149790","display_name":"Milan Pe\u0161i\u0107","orcid":"https://orcid.org/0000-0002-1788-8945","observed_orcids":["https://orcid.org/0000-0002-1788-8945"]},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Milan Pesic","raw_affiliation_strings":["NaMLab gGmbH, Dresden, Germanv"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH, Dresden, Germanv","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113501159","display_name":"Steve Knebel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Steve Knebel","raw_affiliation_strings":["NaMLab gGmbH, Dresden, Germanv"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH, Dresden, Germanv","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112531384","display_name":"Changhwa Jung","orcid":"https://orcid.org/0009-0000-7705-4283","observed_orcids":["https://orcid.org/0009-0000-7705-4283"]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhwa Jung","raw_affiliation_strings":["Samsung Electronics, Semiconductor Research Center, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor Research Center, Korea","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103334529","display_name":"Jaewan Chang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaewan Chang","raw_affiliation_strings":["Samsung Electronics, Semiconductor Research Center, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor Research Center, Korea","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081465224","display_name":"Hanjin Lim","orcid":"https://orcid.org/0000-0003-4171-6622","observed_orcids":["https://orcid.org/0000-0003-4171-6622"]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hanjin Lim","raw_affiliation_strings":["Samsung Electronics, Semiconductor Research Center, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor Research Center, Korea","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075940521","display_name":"Nadiia M. Kolomiiets","orcid":"https://orcid.org/0000-0003-4347-3759","observed_orcids":["https://orcid.org/0000-0003-4347-3759"]},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Nadiia Kolomiiets","raw_affiliation_strings":["Katholieke Universiteit Leuven, Leuven, Flanders, BE"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Katholieke Universiteit Leuven, Leuven, Flanders, BE","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113717731","display_name":"Valery V. Afanas'ev","orcid":"https://orcid.org/0000-0001-5018-4539","observed_orcids":["https://orcid.org/0000-0001-5018-4539"]},"institutions":[{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Valeri V. Afanas'ev","raw_affiliation_strings":["Laboratory of Semiconductor Physics Katholleke Uhiyersiteit Leuven, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory of Semiconductor Physics Katholleke Uhiyersiteit Leuven, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023007303","display_name":"Uwe Paul Schroeder","orcid":"https://orcid.org/0000-0002-6824-2386","observed_orcids":["https://orcid.org/0000-0002-6824-2386"]},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Uwe Schroeder","raw_affiliation_strings":["NaMLab gGmbH, Dresden, Germanv"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NaMLab gGmbH, Dresden, Germanv","institution_ids":["https://openalex.org/I4210122489"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4163,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.50560797,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"129","last_page":"132"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9829000234603882,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9829000234603882,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0066999997943639755,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.004600000102072954,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.9980000257492065},{"id":"https://openalex.org/keywords/dram-capacitors","display_name":"DRAM capacitors","score":0.9980000257492065},{"id":"https://openalex.org/keywords/tin-electrodes","display_name":"TiN electrodes","score":0.6159999966621399},{"id":"https://openalex.org/keywords/platinum-electrode","display_name":"platinum electrode","score":0.8489999771118164},{"id":"https://openalex.org/keywords/dielectric-scaling","display_name":"dielectric scaling","score":0.7689999938011169},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.8320000171661377},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.8190000057220459},{"id":"https://openalex.org/keywords/photoconductivity","display_name":"photoconductivity","score":0.9240000247955322}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7556427717208862},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.7189992070198059},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.5332410335540771},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5172110795974731},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.4573374390602112},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4541842043399811},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44081997871398926},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3925360441207886},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36351096630096436},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32342082262039185},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2630745470523834},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17075121402740479},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.11316734552383423},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08071890473365784},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07919800281524658},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ulis.2015.7063790","doi":"https://doi.org/10.1109/ulis.2015.7063790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ulis.2015.7063790","pdf_url":null,"source":{"id":"https://openalex.org/S4306420416","display_name":"Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W589995197","https://openalex.org/W1966120604","https://openalex.org/W1975851231","https://openalex.org/W1998416127","https://openalex.org/W2000328263","https://openalex.org/W2093466112","https://openalex.org/W2148030294","https://openalex.org/W2161169132","https://openalex.org/W4247403732"],"related_works":["https://openalex.org/W2559981558","https://openalex.org/W1422888057","https://openalex.org/W2332826456","https://openalex.org/W2888889557","https://openalex.org/W4404520375","https://openalex.org/W2757413714","https://openalex.org/W2028993237","https://openalex.org/W2026993247","https://openalex.org/W4411887562","https://openalex.org/W2270526797"],"abstract_inverted_index":{"DRAM":[0],"capacitors":[1],"are":[2,10],"reaching":[3],"the":[4,17,21,63,73,86],"scaling":[5,94],"limit":[6],"and":[7,44,55,65],"new":[8],"approaches":[9],"necessary":[11],"to":[12,46,61],"enable":[13],"further":[14],"reduction":[15],"of":[16,20,29,88,104],"physical":[18],"thickness":[19],"capacitor":[22],"dielectric.":[23],"The":[24,69],"Schottky":[25],"Barrier":[26],"Height":[27],"(SBH)":[28],"a":[30,47,81,100,105],"noble":[31],"metal":[32],"electrode":[33],"(Pt)":[34],"on":[35,92,99],"atomic":[36],"layer":[37],"deposited":[38],"ZrO2/Al2O3/ZrO2(ZAZ,":[39],"6":[40],"nm)":[41],"was":[42,76],"evaluated":[43,77],"compared":[45],"TiN":[48],"electrode.":[49],"Internal":[50],"Photo":[51],"Emission":[52],"Spectroscopy":[53],"(IPE)":[54],"Photoconductivity":[56],"measurement":[57],"(PC)":[58],"were":[59],"used":[60],"estimate":[62],"SBH":[64,70,91],"band":[66],"gap,":[67],"respectively.":[68],"difference":[71],"between":[72],"two":[74],"electrodes":[75],"in":[78],"comparison":[79],"with":[80],"previously":[82],"reported":[83],"model.":[84],"Finally,":[85],"impact":[87],"an":[89],"increased":[90],"dielectric":[93],"will":[95],"be":[96],"discussed":[97],"based":[98],"leakage":[101],"current":[102],"simulation":[103],"ZrO2capacitor.":[106]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}