{"id":"https://openalex.org/W1978458976","doi":"https://doi.org/10.1116/1.579812","title":"Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia","display_name":"Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia","publication_year":1995,"publication_date":"1995-05-01","ids":{"openalex":"https://openalex.org/W1978458976","doi":"https://doi.org/10.1116/1.579812","mag":"1978458976"},"language":"en","primary_location":{"id":"doi:10.1116/1.579812","doi":"https://doi.org/10.1116/1.579812","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.579812","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113942892","display_name":"John N. Kidder","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. N. Kidder","raw_affiliation_strings":["Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, Washington 98195"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, Washington 98195","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076230661","display_name":"Jason S. Kuo","orcid":"https://orcid.org/0000-0001-6678-2568","observed_orcids":["https://orcid.org/0000-0001-6678-2568"]},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. S. Kuo","raw_affiliation_strings":["Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047076045","display_name":"Audunn Ludviksson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Ludviksson","raw_affiliation_strings":["Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108737210","display_name":"Thomas P. Pearsall","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. P. Pearsall","raw_affiliation_strings":["Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, Washington 98195"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, Washington 98195","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109204744","display_name":"James W. Rogers","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. W. Rogers","raw_affiliation_strings":["Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, BF-10, University of Washington, Seattle, Washington 98195","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"middle","author":{"id":null,"display_name":"John M. Grant","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"John M. Grant","raw_affiliation_strings":["Sharp Microelectronics Technology, Inc., Camas, Washington 98607"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sharp Microelectronics Technology, Inc., Camas, Washington 98607","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110166758","display_name":"Lynn R. Allen","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lynn R. Allen","raw_affiliation_strings":["Sharp Microelectronics Technology, Inc., Camas, Washington 98607"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sharp Microelectronics Technology, Inc., Camas, Washington 98607","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109086907","display_name":"Sheng Teng Hsu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sheng Teng Hsu","raw_affiliation_strings":["Sharp Microelectronics Technology, Inc., Camas, Washington 98607"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sharp Microelectronics Technology, Inc., Camas, Washington 98607","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.7044,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.92263183,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"13","issue":"3","first_page":"711","last_page":"715"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9063000082969666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9063000082969666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.07819999754428864,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0034000000450760126,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/aluminum-nitride-thin-films","display_name":"aluminum nitride thin films","score":0.9229999780654907},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.9179999828338623},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8159999847412109},{"id":"https://openalex.org/keywords/ammonia","display_name":"ammonia","score":0.5429999828338623},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.9539999961853027},{"id":"https://openalex.org/keywords/si-100-substrate","display_name":"Si(100) substrate","score":0.8399999737739563},{"id":"https://openalex.org/keywords/al2o3-0001-substrate","display_name":"Al2O3(0001) substrate","score":0.9739999771118164},{"id":"https://openalex.org/keywords/radio-frequency-induction-heating","display_name":"radio-frequency induction heating","score":0.5889999866485596}],"concepts":[{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.7972899675369263},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.6790022253990173},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.6519216299057007},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.6174517869949341},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5747998952865601},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5203601717948914},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5152207016944885},{"id":"https://openalex.org/C2775943645","wikidata":"https://www.wikidata.org/wiki/Q7648839","display_name":"Susceptor","level":4,"score":0.5098839998245239},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.49997544288635254},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.4826367497444153},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.46951431035995483},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.4598698318004608},{"id":"https://openalex.org/C2776382133","wikidata":"https://www.wikidata.org/wiki/Q4087","display_name":"Ammonia","level":2,"score":0.4551825225353241},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4435792565345764},{"id":"https://openalex.org/C183866003","wikidata":"https://www.wikidata.org/wiki/Q515503","display_name":"Combustion chemical vapor deposition","level":4,"score":0.4138333797454834},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40855351090431213},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.2751471996307373},{"id":"https://openalex.org/C75937256","wikidata":"https://www.wikidata.org/wiki/Q1440781","display_name":"Carbon film","level":3,"score":0.16699156165122986},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14634105563163757},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.13720089197158813},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.12545984983444214},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.06326690316200256},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.579812","doi":"https://doi.org/10.1116/1.579812","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.579812","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2136932134","https://openalex.org/W2034688062","https://openalex.org/W2046610829","https://openalex.org/W1987003624","https://openalex.org/W3141978030","https://openalex.org/W3032958982","https://openalex.org/W3046909297","https://openalex.org/W2031297259","https://openalex.org/W2899293507","https://openalex.org/W2016176788"],"abstract_inverted_index":{"We":[0],"have":[1],"studied":[2],"an":[3],"atomic":[4,28],"layer":[5,29],"growth":[6],"process":[7,31],"using":[8,47],"amine\u2013alane":[9],"adducts":[10],"as":[11,49,61,112,114],"precursors":[12],"for":[13],"depositing":[14],"aluminum":[15],"nitride":[16],"(AlN)":[17],"thin":[18],"films":[19,80],"at":[20,44,110,118,131],"temperatures":[21,111],"between":[22,74],"300":[23],"and":[24,56,64,85,103],"800":[25],"K.":[26,116],"The":[27],"deposition":[30,41,107,128,149],"was":[32],"carried":[33],"out":[34],"in":[35,124,137],"a":[36,50,71,92],"horizontal":[37],"metalorganic":[38],"chemical":[39],"vapor":[40],"(MOCVD)":[42],"reactor":[43,69],"atmospheric":[45],"pressure":[46],"H2":[48],"carrier":[51],"gas.":[52],"Dimethylethylamine":[53],"alane":[54],"[(CH3)2(C2H5)N:AlH3]":[55],"ammonia":[57],"(NH3)":[58],"were":[59,81,89],"used":[60],"source":[62,76],"gases":[63],"sequentially":[65],"flowed":[66],"into":[67],"the":[68,140],"with":[70],"hydrogen":[72],"flush":[73],"each":[75],"gas":[77],"step.":[78],"Thin":[79],"deposited":[82],"onto":[83],"Si(001)":[84,141,151],"Al2O3(0001)":[86],"substrates":[87],"that":[88],"heated":[90],"on":[91,150],"susceptor":[93],"by":[94,99],"radio":[95],"frequency":[96],"induction.":[97],"Analysis":[98],"x-ray":[100,104],"photoelectron":[101],"spectroscopy":[102],"diffractometry":[105],"revealed":[106],"of":[108,139],"AlN":[109,127,148],"low":[113],"613":[115],"Processing":[117],"lower":[119],"temperature":[120,133],"(510":[121],"K)":[122,135],"resulted":[123,136],"no":[125,146],"detectable":[126,147],"while":[129],"processing":[130],"higher":[132],"(783":[134],"nitridation":[138],"surface":[142],"to":[143],"Si3N4":[144],"but":[145],"or":[152],"Al2O3(0001).":[153]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}