{"id":"https://openalex.org/W1977560554","doi":"https://doi.org/10.1063/1.113021","title":"Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200\u201330 nm diameter) self-organized on GaAs (311)B substrates","display_name":"Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200\u201330 nm diameter) self-organized on GaAs (311)B substrates","publication_year":1994,"publication_date":"1994-07-25","ids":{"openalex":"https://openalex.org/W1977560554","doi":"https://doi.org/10.1063/1.113021","mag":"1977560554"},"language":"en","primary_location":{"id":"doi:10.1063/1.113021","doi":"https://doi.org/10.1063/1.113021","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.113021","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049827208","display_name":"Richard N\u00f6tzel","orcid":"https://orcid.org/0000-0003-2672-6363","observed_orcids":["https://orcid.org/0000-0003-2672-6363"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Richard N\u00f6tzel","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111573197","display_name":"Jiro Temmyo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Jiro Temmyo","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102091998","display_name":"Hidehiko Kamada","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidehiko Kamada","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103588883","display_name":"Tomofumi Furuta","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomofumi Furuta","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109894729","display_name":"Toshiaki Tamamura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiaki Tamamura","raw_affiliation_strings":["NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":null,"apc_paid":null,"fwci":8.3037,"has_fulltext":false,"cited_by_count":89,"citation_normalized_percentile":{"value":0.98661499,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"65","issue":"4","first_page":"457","last_page":"459"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-311-b-substrate","display_name":"GaAs (311)B substrate","score":0.8759999871253967},{"id":"https://openalex.org/keywords/self-assembled-quantum-dots","display_name":"self-assembled quantum dots","score":0.6259999871253967},{"id":"https://openalex.org/keywords/quantum-boxes","display_name":"quantum boxes","score":0.40299999713897705},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.796999990940094},{"id":"https://openalex.org/keywords/exciton-resonance","display_name":"exciton resonance","score":0.7710000276565552},{"id":"https://openalex.org/keywords/radiative-efficiency","display_name":"radiative efficiency","score":0.7549999952316284}],"concepts":[{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.8600016832351685},{"id":"https://openalex.org/C142181693","wikidata":"https://www.wikidata.org/wiki/Q6493080","display_name":"Laser linewidth","level":3,"score":0.7614269256591797},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7538395524024963},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6737266778945923},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5785672664642334},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.5668286681175232},{"id":"https://openalex.org/C17729963","wikidata":"https://www.wikidata.org/wiki/Q858289","display_name":"Exciton","level":2,"score":0.5537261366844177},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.5333573222160339},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.4623388648033142},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.4587664008140564},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.45793747901916504},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.44000935554504395},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3277321755886078},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.22891446948051453},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12872406840324402},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.09659868478775024},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08196118474006653},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.113021","doi":"https://doi.org/10.1063/1.113021","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.113021","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1972374537","https://openalex.org/W2011294171","https://openalex.org/W2026334914","https://openalex.org/W2027844526","https://openalex.org/W2035385933","https://openalex.org/W2038698559","https://openalex.org/W2046261097","https://openalex.org/W2048164530","https://openalex.org/W2048832367","https://openalex.org/W2068317040","https://openalex.org/W2073246594","https://openalex.org/W2075982808","https://openalex.org/W2077827706","https://openalex.org/W2093131172","https://openalex.org/W2093374037"],"related_works":["https://openalex.org/W1976200463","https://openalex.org/W1977632413","https://openalex.org/W2093106825","https://openalex.org/W1977026627","https://openalex.org/W2101433846","https://openalex.org/W2083500158","https://openalex.org/W1984508542","https://openalex.org/W2073246594","https://openalex.org/W2062950049","https://openalex.org/W2536447229"],"abstract_inverted_index":{"We":[0],"have":[1],"recently":[2],"found":[3],"that":[4],"quantum-box-like":[5],"structures":[6],"are":[7,91],"formed":[8],"during":[9],"spontaneous":[10],"reorganization":[11],"of":[12,15,40],"a":[13],"sequence":[14],"AlGaAs":[16],"and":[17,96],"strained":[18,66],"InGaAs":[19,32],"epitaxial":[20],"films":[21],"grown":[22],"on":[23],"GaAs":[24],"(311)B":[25],"substrates":[26],"by":[27,46,93],"metalorganic":[28],"vapor-phase":[29],"epitaxy":[30],"into":[31],"islands":[33],"(disks)":[34],"buried":[35],"beneath":[36],"AlGaAs.":[37],"The":[38,88],"size":[39],"the":[41,47,51,71,75,83],"disks":[42],"is":[43,62,78],"directly":[44],"controlled":[45],"In":[48],"content":[49],"in":[50,64,101],"range":[52],"200\u201330":[53],"nm.":[54],"Strong":[55],"photoluminescence":[56],"(PL)":[57],"efficiency":[58,77],"at":[59],"room":[60],"temperature":[61],"observed":[63],"these":[65],"quantum":[67,86],"disks.":[68],"Even":[69],"for":[70],"30":[72],"nm":[73],"disk":[74],"radiative":[76],"not":[79],"reduced":[80],"compared":[81],"to":[82],"reference":[84],"(100)":[85],"well.":[87],"PL":[89],"spectra":[90],"characterized":[92],"narrow":[94],"linewidth":[95],"well":[97],"resolved":[98],"exciton":[99],"resonances":[100],"excitation":[102],"spectroscopy.":[103]},"counts_by_year":[{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}