{"id":"https://openalex.org/W1976375412","doi":"https://doi.org/10.1117/12.663446","title":"Characterization of across-device linewidth variation (ADLV) for 65-nm logic SRAM using CDSEM and linewidth roughness algorithms","display_name":"Characterization of across-device linewidth variation (ADLV) for 65-nm logic SRAM using CDSEM and linewidth roughness algorithms","publication_year":2006,"publication_date":"2006-03-10","ids":{"openalex":"https://openalex.org/W1976375412","doi":"https://doi.org/10.1117/12.663446","mag":"1976375412"},"language":"en","primary_location":{"id":"doi:10.1117/12.663446","doi":"https://doi.org/10.1117/12.663446","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.663446","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022135357","display_name":"W. H. Chu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Chu","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071552855","display_name":"Carl J. Radens","orcid":"https://orcid.org/0009-0008-8877-6888","observed_orcids":["https://orcid.org/0009-0008-8877-6888"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Radens","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087970658","display_name":"Bachir Dirahoui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Dirahoui","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087265270","display_name":"Ioana C. Graur","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I. Grauer","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034961603","display_name":"Donald J. Samuels","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Samuels","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016379171","display_name":"Santo Credendino","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4405285863","display_name":"IBM Research and Development Inc. (United States)","ror":"https://ror.org/00h39s752","country_code":"US","type":"company","lineage":["https://openalex.org/I4405285863"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Credendino","raw_affiliation_strings":["IBM Semiconductor Research and Development Ctr. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Ctr. (United States)","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4405285863"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042603628","display_name":"Asuka Nomura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210137977","display_name":"Advanced Micro Devices (United States)","ror":"https://ror.org/04kd6c783","country_code":"US","type":"company","lineage":["https://openalex.org/I4210137977"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Nomura","raw_affiliation_strings":["AMD Corp. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"AMD Corp. (United States)","institution_ids":["https://openalex.org/I4210137977"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026634268","display_name":"Roger S. Cornell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Cornell","raw_affiliation_strings":["Applied Materials (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Materials (United States)","institution_ids":["https://openalex.org/I193427800"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07500087,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6152","issue":null,"first_page":"61520Y","last_page":"61520Y"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/line-width-roughness","display_name":"line width roughness","score":0.7639999985694885},{"id":"https://openalex.org/keywords/optical-proximity-correction","display_name":"optical proximity correction","score":0.8600000143051147},{"id":"https://openalex.org/keywords/low-k1-lithography","display_name":"low-k1 lithography","score":0.8600000143051147},{"id":"https://openalex.org/keywords/process-variation","display_name":"process variation","score":0.6620000004768372},{"id":"https://openalex.org/keywords/substrate-topography","display_name":"substrate topography","score":0.9160000085830688},{"id":"https://openalex.org/keywords/channel-length-variation","display_name":"channel length variation","score":0.9079999923706055}],"concepts":[{"id":"https://openalex.org/C142181693","wikidata":"https://www.wikidata.org/wiki/Q6493080","display_name":"Laser linewidth","level":3,"score":0.9639253616333008},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.6339530944824219},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5838882327079773},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5573213696479797},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5377737283706665},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4971754848957062},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4844365417957306},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4753936529159546},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.47031962871551514},{"id":"https://openalex.org/C146617872","wikidata":"https://www.wikidata.org/wiki/Q1391868","display_name":"Reticle","level":3,"score":0.44034963846206665},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.4247458875179291},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4171212315559387},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.29185760021209717},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.27744871377944946},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.2698470950126648},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20469722151756287},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.202652245759964},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20226603746414185},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.663446","doi":"https://doi.org/10.1117/12.663446","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.663446","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2062478274","https://openalex.org/W2187432571","https://openalex.org/W1991535773","https://openalex.org/W133169204","https://openalex.org/W2083428457","https://openalex.org/W4405236152","https://openalex.org/W1507971749","https://openalex.org/W7151768494","https://openalex.org/W2039888818","https://openalex.org/W2080059391"],"abstract_inverted_index":{"The":[0,105],"lithographic":[1],"challenges":[2],"of":[3,18,32,53,76,82,97,108],"printing":[4],"at":[5],"low-k1":[6],"for":[7,34],"65":[8,35],"nm":[9,36],"logic":[10,37],"technologies":[11,27],"have":[12],"been":[13],"well-documented":[14],"(1,2).":[15],"Heavy":[16],"utilization":[17],"model-based":[19],"optical":[20],"proximity":[21],"correction":[22],"(OPC)":[23],"and":[24,39,58,67,103,125],"reticle":[25],"enhancement":[26],"(RET)":[28],"are":[29],"the":[30,42,54,74,77,117,133,140],"course":[31],"record":[33],"nodes":[38],"below.":[40],"Within":[41],"SRAM":[43],"cells,":[44],"often":[45],"more":[46],"dimensionally":[47],"constrained":[48],"than":[49],"random":[50],"logic,":[51],"characterization":[52,107],"nominal":[55],"gate":[56],"linewidth":[57,59,78,110],"variation":[60,111,138],"is":[61,112],"critical":[62],"to":[63,87,94,115,120,126],"ensure":[64],"cell":[65],"performance":[66],"stability.":[68],"In":[69],"this":[70],"paper,":[71],"we":[72],"present":[73],"use":[75],"roughness":[79],"analysis":[80],"package":[81],"a":[83],"commercially-available":[84],"CD":[85],"SEM":[86],"extract":[88,116],"low-spatial":[89],"frequency":[90],"information":[91,118],"in":[92],"order":[93],"characterize":[95],"effects":[96],"OPC,":[98],"substrate":[99],"topography,":[100],"process":[101],"variations,":[102],"RETs.":[104],"SEM-based":[106],"across-device":[109],"analyzed":[113],"statistically":[114],"necessary":[119],"set":[121],"device":[122],"processing":[123],"conditions":[124],"make":[127],"layout":[128],"corrections":[129],"consistent":[130],"with":[131],"producing":[132],"least":[134],"possible":[135],"channel":[136],"length":[137],"along":[139],"active":[141],"device.":[142]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}