{"id":"https://openalex.org/W1975855242","doi":"https://doi.org/10.1143/jjap.42.5187","title":"Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon","display_name":"Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon","publication_year":2003,"publication_date":"2003-08-15","ids":{"openalex":"https://openalex.org/W1975855242","doi":"https://doi.org/10.1143/jjap.42.5187","mag":"1975855242"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.42.5187","doi":"https://doi.org/10.1143/jjap.42.5187","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.42.5187","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.42.5187/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.42.5187/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011723351","display_name":"Hideharu Matsuura","orcid":"https://orcid.org/0000-0001-7190-286X","observed_orcids":["https://orcid.org/0000-0001-7190-286X"]},"institutions":[{"id":"https://openalex.org/I189513530","display_name":"Osaka Electro-Communication University","ror":"https://ror.org/056bksm23","country_code":"JP","type":"education","lineage":["https://openalex.org/I189513530"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideharu Matsuura","raw_affiliation_strings":["Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan","institution_ids":["https://openalex.org/I189513530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039880386","display_name":"Takuya Ishida","orcid":"https://orcid.org/0009-0000-7206-2292","observed_orcids":["https://orcid.org/0009-0000-7206-2292"]},"institutions":[{"id":"https://openalex.org/I189513530","display_name":"Osaka Electro-Communication University","ror":"https://ror.org/056bksm23","country_code":"JP","type":"education","lineage":["https://openalex.org/I189513530"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuya Ishida","raw_affiliation_strings":["Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan","institution_ids":["https://openalex.org/I189513530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090092162","display_name":"Taishi Kirihataya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I189513530","display_name":"Osaka Electro-Communication University","ror":"https://ror.org/056bksm23","country_code":"JP","type":"education","lineage":["https://openalex.org/I189513530"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Taishi Kirihataya","raw_affiliation_strings":["Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan","institution_ids":["https://openalex.org/I189513530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081661474","display_name":"O. Anzawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Osamu Anzawa","raw_affiliation_strings":["National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113744337","display_name":"Sumio Matsuda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sumio Matsuda","raw_affiliation_strings":["National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.6619,"has_fulltext":true,"cited_by_count":7,"citation_normalized_percentile":{"value":0.71762382,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"42","issue":"Part 1, No. 8","first_page":"5187","last_page":"5188"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.7167999744415283,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.7167999744415283,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.12929999828338623,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10592","display_name":"Fusion materials and technologies","score":0.051899999380111694,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing-behavior","display_name":"annealing behavior","score":0.6669999957084656},{"id":"https://openalex.org/keywords/high-fluence-irradiation","display_name":"high fluence irradiation","score":0.8339999914169312},{"id":"https://openalex.org/keywords/high-energy-electrons","display_name":"high-energy electrons","score":0.7599999904632568},{"id":"https://openalex.org/keywords/protons","display_name":"protons","score":0.7059999704360962},{"id":"https://openalex.org/keywords/p-type-silicon","display_name":"p-type silicon","score":0.9049999713897705},{"id":"https://openalex.org/keywords/boron-doping","display_name":"boron doping","score":0.8700000047683716},{"id":"https://openalex.org/keywords/type-conversion","display_name":"type conversion","score":0.8309999704360962},{"id":"https://openalex.org/keywords/boron-interstitials","display_name":"interstitial boron","score":0.8169999718666077},{"id":"https://openalex.org/keywords/interstitial-oxygen","display_name":"interstitial oxygen","score":0.9639999866485596},{"id":"https://openalex.org/keywords/hole-traps","display_name":"hole traps","score":0.9359999895095825},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.628000020980835}],"concepts":[{"id":"https://openalex.org/C22078206","wikidata":"https://www.wikidata.org/wiki/Q1418023","display_name":"Fluence","level":3,"score":0.83937668800354},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.8034034371376038},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7448171377182007},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.700046181678772},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5525691509246826},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.5355527400970459},{"id":"https://openalex.org/C2985973956","wikidata":"https://www.wikidata.org/wiki/Q1617745","display_name":"High energy","level":2,"score":0.4692395031452179},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4417562782764435},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4417160451412201},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4370809495449066},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.30435097217559814},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.2908795475959778},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.21762719750404358},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21243348717689514},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11008524894714355},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.07704624533653259},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05756717920303345}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.42.5187","doi":"https://doi.org/10.1143/jjap.42.5187","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.42.5187","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.42.5187/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.42.5187","doi":"https://doi.org/10.1143/jjap.42.5187","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.42.5187","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.42.5187/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1975855242.pdf","grobid_xml":"https://content.openalex.org/works/W1975855242.grobid-xml"},"referenced_works_count":6,"referenced_works":["https://openalex.org/W1996828248","https://openalex.org/W1999102284","https://openalex.org/W2016488768","https://openalex.org/W2040119112","https://openalex.org/W2056466574","https://openalex.org/W2086103622"],"related_works":["https://openalex.org/W1988838662","https://openalex.org/W4220780296","https://openalex.org/W2042643089","https://openalex.org/W2019244513","https://openalex.org/W2052275247","https://openalex.org/W7100945834","https://openalex.org/W2078392489","https://openalex.org/W2071624927","https://openalex.org/W2051032323","https://openalex.org/W1966261707"],"abstract_inverted_index":{"The":[0],"high-fluence":[1],"irradiation":[2,66],"of":[3,11,24,39,43,50,88,101,116],"high-energy":[4],"electrons":[5],"or":[6],"protons":[7],"converts":[8],"p-type":[9],"conduction":[10],"B-doped":[12],"Si":[13],"into":[14],"n-type":[15],"conduction.":[16],"This":[17],"type":[18,75],"conversion":[19,76],"results":[20],"from":[21,85],"the":[22,28,40,44,57,60,70,74,86,102,113],"formation":[23],"donorlike":[25,29,45,117],"defects.":[26,118],"Since":[27],"defects":[30,46,103],"are":[31],"completely":[32],"annealed":[33,91,106],"out":[34,92,107],"at":[35,93,108],"523":[36],"K,":[37,95],"one":[38],"possible":[41],"origins":[42],"is":[47,63,81,97],"a":[48],"complex":[49],"interstitial":[51,54],"B":[52],"and":[53],"O.":[55],"On":[56],"other":[58],"hand,":[59],"hole":[61,89],"concentration":[62],"reduced":[64],"by":[65,69],"less":[67],"than":[68],"fluence":[71],"with":[72],"which":[73],"occurs.":[77],"Although":[78],"this":[79],"reduction":[80],"reported":[82],"to":[83,112],"arise":[84],"creation":[87],"traps":[90],">523":[94],"it":[96],"found":[98],"that":[99],"some":[100],"can":[104],"be":[105],"low":[109],"temperatures":[110],"similar":[111],"anneal-out":[114],"temperature":[115]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-22T09:42:04.148104","created_date":"2016-06-24T00:00:00"}