{"id":"https://openalex.org/W1974375985","doi":"https://doi.org/10.1109/icsict.2014.7021165","title":"Vertical heterostructure field effect transistor for high performance electronics","display_name":"Vertical heterostructure field effect transistor for high performance electronics","publication_year":2014,"publication_date":"2014-10-01","ids":{"openalex":"https://openalex.org/W1974375985","doi":"https://doi.org/10.1109/icsict.2014.7021165","mag":"1974375985"},"language":"en","primary_location":{"id":"doi:10.1109/icsict.2014.7021165","doi":"https://doi.org/10.1109/icsict.2014.7021165","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsict.2014.7021165","pdf_url":null,"source":{"id":"https://openalex.org/S4306418723","display_name":"IEEE International Conference on Solid-State and Integrated Circuit Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100390838","display_name":"Yuan Liu","orcid":"https://orcid.org/0000-0002-0024-9290","observed_orcids":["https://orcid.org/0000-0002-0024-9290"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Liu","raw_affiliation_strings":["Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA","Department of Materials Science and Engineering, University of California Los Angeles, 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]},{"raw_affiliation_string":"Department of Materials Science and Engineering, University of California Los Angeles, 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041318946","display_name":"Yu Huang","orcid":"https://orcid.org/0000-0003-1793-0741","observed_orcids":["https://orcid.org/0000-0003-1793-0741","https://orcid.org/0000-0002-7930-9056"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yu Huang","raw_affiliation_strings":["Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA","Department of Materials Science and Engineering, University of California Los Angeles, 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]},{"raw_affiliation_string":"Department of Materials Science and Engineering, University of California Los Angeles, 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019924793","display_name":"Xiangfeng Duan","orcid":"https://orcid.org/0000-0002-4321-6288","observed_orcids":["https://orcid.org/0000-0002-4321-6288"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiangfeng Duan","raw_affiliation_strings":["Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA","Department of Chemistry and Biochemistry, University of California, Los Angeles 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I161318765"]},{"raw_affiliation_string":"Department of Chemistry and Biochemistry, University of California, Los Angeles 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I161318765"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05675393,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"14","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.020500000566244125,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"graphene","score":0.515999972820282},{"id":"https://openalex.org/keywords/vertical-field-effect-transistors","display_name":"vertical field-effect transistors","score":0.828000009059906},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.6480000019073486},{"id":"https://openalex.org/keywords/current-density","display_name":"current density","score":0.5490000247955322},{"id":"https://openalex.org/keywords/bilayer-graphene","display_name":"bilayer graphene","score":0.7409999966621399},{"id":"https://openalex.org/keywords/graphene-nanostructures","display_name":"graphene nanostructures","score":0.6930000185966492},{"id":"https://openalex.org/keywords/flexible-electronics","display_name":"flexible electronics","score":0.640999972820282},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.7900000214576721},{"id":"https://openalex.org/keywords/graphene-electronics","display_name":"graphene electronics","score":0.5139999985694885}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.8634951114654541},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7481629848480225},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6232422590255737},{"id":"https://openalex.org/C143401881","wikidata":"https://www.wikidata.org/wiki/Q4156171","display_name":"Bilayer graphene","level":3,"score":0.6215164661407471},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5894523859024048},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5494410991668701},{"id":"https://openalex.org/C84967400","wikidata":"https://www.wikidata.org/wiki/Q1066289","display_name":"Flexible electronics","level":2,"score":0.5469931364059448},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5332491397857666},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5167895555496216},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5070104598999023},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4815843105316162},{"id":"https://openalex.org/C140807948","wikidata":"https://www.wikidata.org/wiki/Q4148055","display_name":"Graphene nanoribbons","level":3,"score":0.4285827577114105},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4151516854763031},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17229151725769043},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10892519354820251},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icsict.2014.7021165","doi":"https://doi.org/10.1109/icsict.2014.7021165","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsict.2014.7021165","pdf_url":null,"source":{"id":"https://openalex.org/S4306418723","display_name":"IEEE International Conference on Solid-State and Integrated Circuit Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1964354942","https://openalex.org/W2039211361","https://openalex.org/W2078118572","https://openalex.org/W2088783499","https://openalex.org/W2091023923","https://openalex.org/W2129024591","https://openalex.org/W2321986854"],"related_works":["https://openalex.org/W3043206893","https://openalex.org/W2078118572","https://openalex.org/W1591114635","https://openalex.org/W4240608665","https://openalex.org/W1989945791","https://openalex.org/W4200324688","https://openalex.org/W2321986854","https://openalex.org/W3184043370","https://openalex.org/W1797198319","https://openalex.org/W2045095179"],"abstract_inverted_index":{"Graphene":[0],"has":[1,30],"emerged":[2],"as":[3,40,97,134,136],"an":[4,25,41,98],"exciting":[5],"material":[6],"for":[7],"future":[8],"electronics":[9,155],"and":[10,18,80,89,131,143,156],"optoelectronics":[11],"due":[12],"to":[13,105,153],"its":[14],"unique":[15,137],"electrical,":[16],"optical":[17],"mechanical":[19],"properties.":[20],"However,":[21],"the":[22,32,58,68],"lack":[23],"of":[24,46,67,78,110],"intrinsic":[26],"bandgap":[27],"in":[28,36,50,101],"graphene":[29,39,51,55,84,154],"limited":[31],"achievable":[33],"on-off":[34,59,129],"ratio":[35,130],"transistors":[37],"using":[38],"active":[42,99],"channel.":[43],"The":[44],"creation":[45],"a":[47,64,86,107,150],"transport":[48],"gap":[49],"nanostructures":[52],"or":[53],"bilayer":[54],"can":[56,94],"improve":[57],"ratio,":[60],"but":[61],"often":[62],"at":[63],"severe":[65],"sacrifice":[66],"deliverable":[69],"current":[70,132],"density.":[71],"With":[72],"single":[73],"atomic":[74],"thickness,":[75],"finite":[76],"density":[77],"states":[79],"weak":[81],"screening":[82],"effect,":[83],"exhibits":[85],"field-tunable":[87],"work-function":[88],"partial":[90],"electrostatic":[91],"transparency.":[92],"It":[93],"thus":[95],"function":[96],"contact":[100],"tunable":[102],"graphene-semiconductor":[103],"junction":[104],"enable":[106],"new":[108,151],"generation":[109],"vertical":[111,118],"device1-5.":[112],"Here":[113],"we":[114],"discuss":[115],"three":[116],"different":[117],"field-effect":[119],"transistors,":[120],"which":[121],"have":[122],"been":[123],"recently":[124],"demonstrated":[125],"with":[126],"greatly":[127],"improved":[128],"density,":[133],"well":[135],"properties":[138],"such":[139],"high":[140],"flexibility,":[141],"stability":[142],"low":[144],"cost.":[145],"This":[146],"could":[147],"open":[148],"up":[149],"pathway":[152],"ultra-flexible":[157],"thin":[158],"film":[159],"transistors.":[160]},"counts_by_year":[],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2016-06-24T00:00:00"}