{"id":"https://openalex.org/W1973408281","doi":"https://doi.org/10.1049/el:19900527","title":"High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology","display_name":"High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology","publication_year":1990,"publication_date":"1990-06-07","ids":{"openalex":"https://openalex.org/W1973408281","doi":"https://doi.org/10.1049/el:19900527","mag":"1973408281"},"language":"en","primary_location":{"id":"doi:10.1049/el:19900527","doi":"https://doi.org/10.1049/el:19900527","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19900527","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5048842310","display_name":"Y. H. Lo","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Y.H. Lo","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089275723","display_name":"M. Bagheri","orcid":"https://orcid.org/0000-0002-1932-473X","observed_orcids":["https://orcid.org/0000-0002-1932-473X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Bagheri","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109057941","display_name":"Po-Tsun Lin","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P.S.D. Lin","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009407023","display_name":"P. Grabbe","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Grabbe","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074815989","display_name":"R. Bhat","orcid":"https://orcid.org/0000-0002-7772-2509","observed_orcids":["https://orcid.org/0000-0002-7772-2509"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Bhat","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028387359","display_name":"N. G. Stoffel","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N.G. Stoffel","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073874283","display_name":"T.P. Lee","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T.P. Lee","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":null,"display_name":"D.T. Kong","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D.T. Kong","raw_affiliation_strings":["Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bellcore, 331 Newman Springs Road, Red Bank, WNJ 07701, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.16279228,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"26","issue":"12","first_page":"807","last_page":"809"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9175000190734863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9175000190734863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.023399999365210533,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.01640000008046627,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inp-substrate","display_name":"InP substrate","score":0.7829999923706055},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.8579999804496765},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8939999938011169},{"id":"https://openalex.org/keywords/submicron-transistors","display_name":"submicron transistors","score":0.8989999890327454},{"id":"https://openalex.org/keywords/2-1-multiplexer","display_name":"2:1 multiplexer","score":0.8320000171661377},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8029999732971191}],"concepts":[{"id":"https://openalex.org/C70970002","wikidata":"https://www.wikidata.org/wiki/Q189434","display_name":"Multiplexer","level":3,"score":0.9526586532592773},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8340247869491577},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.7229437828063965},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7079184055328369},{"id":"https://openalex.org/C21922175","wikidata":"https://www.wikidata.org/wiki/Q3105497","display_name":"Gigabit","level":2,"score":0.6785027384757996},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6616086363792419},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.5277284383773804},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.5271487236022949},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5270412564277649},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.40432918071746826},{"id":"https://openalex.org/C19275194","wikidata":"https://www.wikidata.org/wiki/Q222903","display_name":"Multiplexing","level":2,"score":0.3967374265193939},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36763715744018555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3009602129459381},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.225161612033844},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17006120085716248},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15593251585960388},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0850270688533783},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19900527","doi":"https://doi.org/10.1049/el:19900527","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19900527","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2023882836","https://openalex.org/W2030424100","https://openalex.org/W2005932513","https://openalex.org/W2069618557","https://openalex.org/W2019005312","https://openalex.org/W1590674312","https://openalex.org/W2071637658","https://openalex.org/W2111704809","https://openalex.org/W2017956644","https://openalex.org/W2090957097"],"abstract_inverted_index":{"High":[0],"performance":[1],"0.5":[2],"\u03bcm":[3],"gate":[4],"length":[5],"InGaAs/GaAs":[6],"pseudo-MODFETs":[7],"are":[8],"demonstrated":[9],"on":[10],"InP":[11],"substrates":[12],"by":[13],"MOVPE":[14],"heteroepitaxial":[15],"growth.":[16],"The":[17],"transistors":[18],"show":[19],"a":[20,25],"300":[21],"mS/mm":[22],"transconductance":[23],"and":[24],"30":[26],"GHz":[27],"cutoff":[28],"frequency.":[29],"A":[30],"2:1":[31],"multiplexer":[32,45],"is":[33],"also":[34],"made":[35],"using":[36],"the":[37,44],"same":[38],"technology.":[39],"Preliminary":[40],"testing":[41],"indicates":[42],"that":[43],"can":[46],"operate":[47],"up":[48],"to":[49],"10":[50],"Gbit/s.":[51]},"counts_by_year":[],"updated_date":"2026-10-02T10:15:12.560889","created_date":"2016-06-24T00:00:00"}