{"id":"https://openalex.org/W1973058792","doi":"https://doi.org/10.1063/1.3131686","title":"Device model for graphene bilayer field-effect transistor","display_name":"Device model for graphene bilayer field-effect transistor","publication_year":2009,"publication_date":"2009-05-15","ids":{"openalex":"https://openalex.org/W1973058792","doi":"https://doi.org/10.1063/1.3131686","mag":"1973058792"},"language":"en","primary_location":{"id":"doi:10.1063/1.3131686","doi":"https://doi.org/10.1063/1.3131686","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3131686","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["arxiv","crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/0812.4490","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"V. Ryzhii","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I141591182","display_name":"University of Aizu","ror":"https://ror.org/02pg0e883","country_code":"JP","type":"education","lineage":["https://openalex.org/I141591182"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"V. Ryzhii","raw_affiliation_strings":["CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","institution_ids":["https://openalex.org/I4210086780"]},{"raw_affiliation_string":"University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan","institution_ids":["https://openalex.org/I141591182"]}]},{"author_position":"middle","author":{"id":null,"display_name":"M. Ryzhii","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I141591182","display_name":"University of Aizu","ror":"https://ror.org/02pg0e883","country_code":"JP","type":"education","lineage":["https://openalex.org/I141591182"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Ryzhii","raw_affiliation_strings":["CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","institution_ids":["https://openalex.org/I4210086780"]},{"raw_affiliation_string":"University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan","institution_ids":["https://openalex.org/I141591182"]}]},{"author_position":"middle","author":{"id":null,"display_name":"A. Satou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I141591182","display_name":"University of Aizu","ror":"https://ror.org/02pg0e883","country_code":"JP","type":"education","lineage":["https://openalex.org/I141591182"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Satou","raw_affiliation_strings":["CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","institution_ids":["https://openalex.org/I4210086780"]},{"raw_affiliation_string":"University of Aizu 1 Computational Nanoelectronics Laboratory, , Aizu-Wakamatsu 965-8580, Japan","institution_ids":["https://openalex.org/I141591182"]}]},{"author_position":"middle","author":{"id":null,"display_name":"T. Otsuji","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]},{"id":"https://openalex.org/I4405285984","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/00vbrys56","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Otsuji","raw_affiliation_strings":["CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","Tohoku University 3 Research Institute for Electrical Communication, , Sendai 980-8577, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CREST 2 Japan Science and Technology Agency, , Tokyo 107-0075, Japan","institution_ids":["https://openalex.org/I4210086780"]},{"raw_affiliation_string":"Tohoku University 3 Research Institute for Electrical Communication, , Sendai 980-8577, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110733662","display_name":"Natacha Kirova","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2799857465","display_name":"Laboratoire de physique des Solides","ror":"https://ror.org/02dyaew97","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I277688954","https://openalex.org/I2799857465"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Kirova","raw_affiliation_strings":["Univ. Paris-Sud 4 Laboratoire de Physique des Solides, , CNRS, UMR 8502, F-91405 Orsay Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Paris-Sud 4 Laboratoire de Physique des Solides, , CNRS, UMR 8502, F-91405 Orsay Cedex, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590","https://openalex.org/I2799857465"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":2.2641,"has_fulltext":true,"cited_by_count":46,"citation_normalized_percentile":{"value":0.88178309,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":92,"max":98},"biblio":{"volume":"105","issue":"10","first_page":"1045101","last_page":"1045109"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.021700000390410423,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.010200000368058681,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/analytical-device-model","display_name":"analytical device model","score":0.8920000195503235},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.7649999856948853},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8379999995231628},{"id":"https://openalex.org/keywords/drain-current","display_name":"drain current","score":0.7710000276565552},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.6290000081062317},{"id":"https://openalex.org/keywords/ballistic-electron-transport","display_name":"ballistic electron transport","score":0.8360000252723694},{"id":"https://openalex.org/keywords/electron-scattering","display_name":"electron scattering","score":0.7979999780654907},{"id":"https://openalex.org/keywords/threshold-frequency","display_name":"threshold frequency","score":0.6809999942779541}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8853999972343445},{"id":"https://openalex.org/C143401881","wikidata":"https://www.wikidata.org/wiki/Q4156171","display_name":"Bilayer graphene","level":3,"score":0.7741000056266785},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6692000031471252},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.6498000025749207},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6014000177383423},{"id":"https://openalex.org/C192683347","wikidata":"https://www.wikidata.org/wiki/Q4851798","display_name":"Ballistic conduction","level":3,"score":0.5856000185012817},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5182999968528748},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4327999949455261},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4268999993801117},{"id":"https://openalex.org/C192157962","wikidata":"https://www.wikidata.org/wiki/Q4087243","display_name":"Bilayer","level":3,"score":0.42660000920295715},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.4198000133037567},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.38119998574256897},{"id":"https://openalex.org/C26057338","wikidata":"https://www.wikidata.org/wiki/Q431335","display_name":"Fermi energy","level":3,"score":0.3709000051021576},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3684999942779541},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.3675999939441681},{"id":"https://openalex.org/C40636707","wikidata":"https://www.wikidata.org/wiki/Q13633683","display_name":"Fermi level","level":3,"score":0.3610999882221222},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.35899999737739563},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.34700000286102295},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.32249999046325684},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.31929999589920044},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.3154999911785126},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.3077999949455261},{"id":"https://openalex.org/C140807948","wikidata":"https://www.wikidata.org/wiki/Q4148055","display_name":"Graphene nanoribbons","level":3,"score":0.29679998755455017},{"id":"https://openalex.org/C146285849","wikidata":"https://www.wikidata.org/wiki/Q1327107","display_name":"Electron scattering","level":3,"score":0.2913999855518341},{"id":"https://openalex.org/C85867844","wikidata":"https://www.wikidata.org/wiki/Q1072904","display_name":"Fermi gas","level":3,"score":0.27730000019073486},{"id":"https://openalex.org/C52234038","wikidata":"https://www.wikidata.org/wiki/Q17128025","display_name":"Cross section (physics)","level":2,"score":0.2637999951839447},{"id":"https://openalex.org/C85761212","wikidata":"https://www.wikidata.org/wiki/Q1974593","display_name":"Transient response","level":2,"score":0.2612999975681305},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.26030001044273376}],"mesh":[],"locations_count":6,"locations":[{"id":"doi:10.1063/1.3131686","doi":"https://doi.org/10.1063/1.3131686","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3131686","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:arXiv.org:0812.4490","doi":null,"is_oa":true,"landing_page_url":"http://arxiv.org/abs/0812.4490","pdf_url":"https://arxiv.org/pdf/0812.4490","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"pmh:oai:HAL:hal-04896687v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-04896687","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Applied Physics, 2009, 105 (10), ⟨10.1063/1.3131686⟩","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:irdb.nii.ac.jp:00918:0000477909","doi":null,"is_oa":true,"landing_page_url":"https://tohoku.repo.nii.ac.jp/records/47703","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Applied Physics","raw_type":"journal article"},{"id":"doi:10.48550/arxiv.0812.4490","doi":"https://doi.org/10.48550/arxiv.0812.4490","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.0812.4490","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"},{"id":"mag:1591086410","doi":null,"is_oa":false,"landing_page_url":"http://ci.nii.ac.jp/naid/120002338684","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Journal of Applied Physics","raw_type":null}],"best_oa_location":{"id":"pmh:oai:arXiv.org:0812.4490","doi":null,"is_oa":true,"landing_page_url":"http://arxiv.org/abs/0812.4490","pdf_url":"https://arxiv.org/pdf/0812.4490","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320883","display_name":"Agence Nationale de la Recherche","ror":"https://ror.org/00rbzpz17"},{"id":"https://openalex.org/F4320323533","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702"},{"id":"https://openalex.org/F4320334789","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19"},{"id":"https://openalex.org/F4320338075","display_name":"Core Research for Evolutional Science and Technology","ror":"https://ror.org/00097mb19"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1973058792.pdf","grobid_xml":"https://content.openalex.org/works/W1973058792.grobid-xml"},"referenced_works_count":34,"referenced_works":["https://openalex.org/W1964394471","https://openalex.org/W1967202721","https://openalex.org/W1967789761","https://openalex.org/W1970102106","https://openalex.org/W1986729677","https://openalex.org/W1998860239","https://openalex.org/W1999175619","https://openalex.org/W2014935324","https://openalex.org/W2029978751","https://openalex.org/W2032527329","https://openalex.org/W2039823746","https://openalex.org/W2045487092","https://openalex.org/W2046430416","https://openalex.org/W2050949257","https://openalex.org/W2061006158","https://openalex.org/W2061557594","https://openalex.org/W2063825918","https://openalex.org/W2077770884","https://openalex.org/W2080880982","https://openalex.org/W2084094906","https://openalex.org/W2084422342","https://openalex.org/W2091628914","https://openalex.org/W2103148075","https://openalex.org/W2113467957","https://openalex.org/W2117038347","https://openalex.org/W2121772044","https://openalex.org/W2121990892","https://openalex.org/W2125284466","https://openalex.org/W2133737316","https://openalex.org/W2138159532","https://openalex.org/W2168134417","https://openalex.org/W2330633042","https://openalex.org/W2602980770","https://openalex.org/W3147289055"],"related_works":["https://openalex.org/W2036842977","https://openalex.org/W2909388071","https://openalex.org/W1988331933","https://openalex.org/W3117184804","https://openalex.org/W2009620962","https://openalex.org/W2009181099","https://openalex.org/W2046430416","https://openalex.org/W2061948800","https://openalex.org/W2063825918","https://openalex.org/W2085841799"],"abstract_inverted_index":{"We":[0],"present":[1],"an":[2],"analytical":[3],"device":[4],"model":[5,27],"for":[6,29],"a":[7,14,18,148,189],"graphene":[8,15],"bilayer":[9,16],"field-effect":[10],"transistor":[11],"(GBL-FET)":[12],"with":[13,21,73,136,141,188],"as":[17,39,41,81],"channel":[19,49,127],"and":[20,23,35,54,64,68,76,89,92,106,153,156],"back":[22],"top":[24,130],"gates.":[25],"The":[26,143],"accounts":[28],"the":[30,33,48,51,62,69,86,93,110,114,123,126,129,151,162,167,171,179],"dependences":[31],"of":[32,47,71,83,125,170],"electron":[34,79,144],"hole":[36],"Fermi":[37],"energies":[38],"well":[40],"energy":[42],"gap":[43],"in":[44,150,183],"different":[45],"sections":[46],"on":[50,121],"bias":[52,87],"back-gate":[53,88],"top-gate":[55,90,115],"voltages.":[56],"Using":[57],"this":[58],"model,":[59],"we":[60],"calculate":[61],"dc":[63,111,152],"ac":[65,154,180],"source-drain":[66],"currents":[67,155],"transconductance":[70,181],"GBL-FETs":[72],"both":[74],"ballistic":[75],"collision":[77],"dominated":[78],"transport":[80],"functions":[82],"structural":[84],"parameters,":[85],"voltages,":[91,104],"signal":[94],"frequency.":[95,164],"It":[96],"is":[97,134],"shown":[98],"that":[99,109],"there":[100],"are":[101],"two":[102],"threshold":[103,163],"Vth,1":[105],"Vth,2,":[107],"so":[108],"current":[112],"versus":[113],"voltage":[116],"relation":[117],"markedly":[118],"changes":[119],"depending":[120],"whether":[122],"section":[124,173],"beneath":[128],"gate":[131],"(gated":[132],"section)":[133],"filled":[135,140],"electrons,":[137],"depleted,":[138],"or":[139],"holes.":[142],"scattering":[145],"leads":[146],"to":[147],"decrease":[149],"transconductances,":[157],"whereas":[158],"it":[159],"weakly":[160],"affects":[161],"As":[165],"demonstrated,":[166],"transient":[168],"recharging":[169],"gated":[172],"by":[174],"holes":[175],"can":[176],"pronouncedly":[177],"influence":[178],"resulting":[182],"its":[184],"nonmonotonic":[185],"frequency":[186],"dependence":[187],"maximum":[190],"at":[191],"fairly":[192],"high":[193],"frequencies.":[194]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}