{"id":"https://openalex.org/W1968536788","doi":"https://doi.org/10.1063/1.357823","title":"Characterization of fluorinated hydrogenated amorphous silicon nitride (a-SiNx:H) alloys","display_name":"Characterization of fluorinated hydrogenated amorphous silicon nitride (a-SiNx:H) alloys","publication_year":1994,"publication_date":"1994-07-15","ids":{"openalex":"https://openalex.org/W1968536788","doi":"https://doi.org/10.1063/1.357823","mag":"1968536788"},"language":"en","primary_location":{"id":"doi:10.1063/1.357823","doi":"https://doi.org/10.1063/1.357823","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.357823","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084303802","display_name":"J. M. Shen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. M. Shen","raw_affiliation_strings":["Department of Physics, Texas Tech University, Lubbock, Texas 79409"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Texas Tech University, Lubbock, Texas 79409","institution_ids":["https://openalex.org/I12315562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023388159","display_name":"Chintamani P. Palsule","orcid":"https://orcid.org/0009-0000-4766-7601","observed_orcids":["https://orcid.org/0009-0000-4766-7601"]},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Palsule","raw_affiliation_strings":["Department of Physics, Texas Tech University, Lubbock, Texas 79409"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Texas Tech University, Lubbock, Texas 79409","institution_ids":["https://openalex.org/I12315562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110186088","display_name":"S. Gangopadhyay","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Gangopadhyay","raw_affiliation_strings":["Department of Physics, Texas Tech University, Lubbock, Texas 79409"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Texas Tech University, Lubbock, Texas 79409","institution_ids":["https://openalex.org/I12315562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111637631","display_name":"Hameed A. Naseem","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. A. Naseem","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025703826","display_name":"S. Kizzar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Kizzar","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040938626","display_name":"Freddy H. C. Goh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Freddy H. C. Goh","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701","institution_ids":["https://openalex.org/I78715868"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.438,"has_fulltext":false,"cited_by_count":38,"citation_normalized_percentile":{"value":0.77705937,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"76","issue":"2","first_page":"1055","last_page":"1061"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.3953000009059906,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.3953000009059906,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.1940000057220459,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.16590000689029694,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/glow-discharge-decomposition","display_name":"glow discharge decomposition","score":0.6489999890327454},{"id":"https://openalex.org/keywords/nitrogen-trifluoride","display_name":"NF3","score":0.593999981880188},{"id":"https://openalex.org/keywords/silane","display_name":"silane","score":0.9779999852180481},{"id":"https://openalex.org/keywords/infrared-spectra","display_name":"infrared spectra","score":0.902999997138977},{"id":"https://openalex.org/keywords/oscillator-strengths","display_name":"oscillator strengths","score":0.7300000190734863},{"id":"https://openalex.org/keywords/bonding-configuration","display_name":"bonding configuration","score":0.847000002861023},{"id":"https://openalex.org/keywords/defect-density","display_name":"defect density","score":0.7260000109672546},{"id":"https://openalex.org/keywords/silicon-dangling-bonds","display_name":"silicon dangling bonds","score":0.8360000252723694}],"concepts":[{"id":"https://openalex.org/C32424582","wikidata":"https://www.wikidata.org/wiki/Q5216183","display_name":"Dangling bond","level":3,"score":0.8658165335655212},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.6199571490287781},{"id":"https://openalex.org/C2776595061","wikidata":"https://www.wikidata.org/wiki/Q1427934","display_name":"Glow discharge","level":3,"score":0.5970855951309204},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5776296257972717},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5581828355789185},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.5203368663787842},{"id":"https://openalex.org/C153642686","wikidata":"https://www.wikidata.org/wiki/Q70906","display_name":"Infrared spectroscopy","level":2,"score":0.5020551681518555},{"id":"https://openalex.org/C2779845233","wikidata":"https://www.wikidata.org/wiki/Q3381567","display_name":"Photocurrent","level":2,"score":0.48516494035720825},{"id":"https://openalex.org/C506198293","wikidata":"https://www.wikidata.org/wiki/Q650","display_name":"Fluorine","level":2,"score":0.4728586673736572},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.46912670135498047},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4520469009876251},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4449147582054138},{"id":"https://openalex.org/C119824511","wikidata":"https://www.wikidata.org/wiki/Q13553575","display_name":"Absorption spectroscopy","level":2,"score":0.43923333287239075},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.43315401673316956},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.42997509241104126},{"id":"https://openalex.org/C201999631","wikidata":"https://www.wikidata.org/wiki/Q2601129","display_name":"Photoconductivity","level":2,"score":0.42971378564834595},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.24703380465507507},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.19344791769981384},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1588478982448578},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.11451888084411621},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1081552505493164},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10651451349258423},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.08653739094734192},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.06962564587593079},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.05696362257003784},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.357823","doi":"https://doi.org/10.1063/1.357823","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.357823","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1976426796","https://openalex.org/W1977030818","https://openalex.org/W2000490609","https://openalex.org/W2009044616","https://openalex.org/W2013869420","https://openalex.org/W2018033216","https://openalex.org/W2024517695","https://openalex.org/W2032104065","https://openalex.org/W2040875144","https://openalex.org/W2042340882","https://openalex.org/W2060763500","https://openalex.org/W2080207215","https://openalex.org/W2081161004","https://openalex.org/W2088806214","https://openalex.org/W2089141360","https://openalex.org/W2091681409","https://openalex.org/W2092764428","https://openalex.org/W2111397230","https://openalex.org/W2479113758"],"related_works":["https://openalex.org/W2076076903","https://openalex.org/W2040246693","https://openalex.org/W2075705444","https://openalex.org/W2023340825","https://openalex.org/W1989531593","https://openalex.org/W2046209787","https://openalex.org/W2603680828","https://openalex.org/W2004386132","https://openalex.org/W2328194042","https://openalex.org/W2059299539"],"abstract_inverted_index":{"Fluorinated":[0],"a-SiNx:H(0\u2264x\u22640.19)":[1],"alloys":[2,36,111],"prepared":[3],"using":[4,15],"glow":[5],"discharge":[6],"decomposition":[7],"of":[8,31,46,65,88,107],"NF3":[9],"and":[10,18,27,48,85],"SiH4":[11],"have":[12,37,55],"been":[13,38,56],"characterized":[14],"infrared":[16],"absorption":[17],"the":[19,28,41,52,63,66,76,80,86],"constant":[20],"photocurrent":[21],"method":[22],"(CPM).":[23],"The":[24,44,104],"bonding":[25],"configurations":[26],"oscillator":[29],"strengths":[30],"various":[32],"bonds":[33,91],"in":[34,51,72,101,109],"these":[35,102,110],"obtained":[39,57],"from":[40],"infrared-absorption":[42],"spectra.":[43],"density":[45],"defects":[47],"their":[49],"distribution":[50],"band":[53],"gap":[54],"without":[58],"making":[59],"any":[60],"assumptions":[61],"about":[62],"form":[64],"distribution.":[67],"It":[68],"is":[69,79,92,112],"found":[70],"that":[71],"this":[73],"composition":[74],"range":[75],"main":[77],"defect":[78],"neutral":[81],"silicon":[82],"dangling":[83,90],"bond":[84],"concentration":[87],"charged":[89],"either":[93],"too":[94],"low":[95],"or":[96],"they":[97],"are":[98],"not":[99],"present":[100],"alloys.":[103],"possible":[105],"role":[106],"fluorine":[108],"also":[113],"discussed.":[114]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}