{"id":"https://openalex.org/W1968403697","doi":"https://doi.org/10.1049/el.2009.0243","title":"InP/InGaAs uni-travelling carrier heterojunction phototransistors","display_name":"InP/InGaAs uni-travelling carrier heterojunction phototransistors","publication_year":2009,"publication_date":"2009-06-04","ids":{"openalex":"https://openalex.org/W1968403697","doi":"https://doi.org/10.1049/el.2009.0243","mag":"1968403697"},"language":"en","primary_location":{"id":"doi:10.1049/el.2009.0243","doi":"https://doi.org/10.1049/el.2009.0243","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el.2009.0243","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084023003","display_name":"J. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Kim","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","institution_ids":["https://openalex.org/I66946132"]},{"raw_affiliation_string":"(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu","institution_ids":["https://openalex.org/I66946132"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110258754","display_name":"Subramaniam Kanakaraju","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Kanakaraju","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","institution_ids":["https://openalex.org/I66946132"]},{"raw_affiliation_string":"(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu","institution_ids":["https://openalex.org/I66946132"]}]},{"author_position":"middle","author":{"id":null,"display_name":"W.B. Johnson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W.B. Johnson","raw_affiliation_strings":["Laboratory for Physical Sciences, Universitry of Maryland at College Park, College Park, MD 20740, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Physical Sciences, Universitry of Maryland at College Park, College Park, MD 20740, USA","institution_ids":["https://openalex.org/I66946132"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081329197","display_name":"Chang-Min Lee","orcid":"https://orcid.org/0009-0009-3188-6215","observed_orcids":["https://orcid.org/0009-0009-3188-6215"]},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.-H. Lee","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA","institution_ids":["https://openalex.org/I66946132"]},{"raw_affiliation_string":"(Department of Electrical and Computer Engineering, University of Maryland at College Park, College Park, MD 20742, USA) E-mail: junghwan@mail.umd.edu","institution_ids":["https://openalex.org/I66946132"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I66946132"],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":0.7733,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.73893035,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"45","issue":"12","first_page":"649","last_page":"651"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.4740999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.4740999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.4359999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.02539999969303608,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-phototransistor","display_name":"heterojunction phototransistor","score":0.8920000195503235},{"id":"https://openalex.org/keywords/uni-traveling-carrier-photodiode","display_name":"uni-traveling-carrier photodiode","score":0.8970000147819519},{"id":"https://openalex.org/keywords/ingaas-inp-heterojunction","display_name":"InP/InGaAs heterojunction","score":0.8840000033378601},{"id":"https://openalex.org/keywords/optical-gain","display_name":"optical gain","score":0.8270000219345093},{"id":"https://openalex.org/keywords/optical-detection","display_name":"optical detection","score":0.6100000143051147}],"concepts":[{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.924970805644989},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7392376661300659},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7179304957389832},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.7134637832641602},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5966199636459351},{"id":"https://openalex.org/C2778217198","wikidata":"https://www.wikidata.org/wiki/Q556977","display_name":"Cutoff","level":2,"score":0.4615514278411865},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.4258493483066559},{"id":"https://openalex.org/C2987974824","wikidata":"https://www.wikidata.org/wiki/Q176300","display_name":"Reverse bias","level":3,"score":0.4223324656486511},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4195685386657715},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.4092484712600708},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2370082437992096},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.08241960406303406},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.07304447889328003},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el.2009.0243","doi":"https://doi.org/10.1049/el.2009.0243","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el.2009.0243","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1928820228","https://openalex.org/W1974385521","https://openalex.org/W2097883473","https://openalex.org/W2102015994","https://openalex.org/W2127590713","https://openalex.org/W2142482783"],"related_works":["https://openalex.org/W2127325435","https://openalex.org/W2094756173","https://openalex.org/W1985696835","https://openalex.org/W1974385521","https://openalex.org/W2034006801","https://openalex.org/W2142324323","https://openalex.org/W2087075329","https://openalex.org/W2127287217","https://openalex.org/W1995126259","https://openalex.org/W2023786330"],"abstract_inverted_index":{"A":[0,20],"novel":[1],"heterojunction":[2],"phototransistor":[3],"using":[4],"a":[5],"uni-travelling":[6],"carrier":[7],"photodiode":[8],"structure":[9],"in":[10],"the":[11],"base":[12],"and":[13,18,36],"collector":[14],"layers":[15],"is":[16],"proposed":[17],"fabricated.":[19],"5\u00d75":[21],"\u00b5m":[22],"optical":[23,29,38],"detection":[24],"area":[25],"device":[26],"shows":[27],"an":[28,37],"gain":[30,39],"cutoff":[31],"frequency":[32],"of":[33,40],"52":[34],"GHz":[35],"37":[41],"dB":[42],"at":[43],"1":[44],"GHz.":[45]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}