{"id":"https://openalex.org/W1968197882","doi":"https://doi.org/10.1063/1.1326482","title":"Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application","display_name":"Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application","publication_year":2000,"publication_date":"2000-11-13","ids":{"openalex":"https://openalex.org/W1968197882","doi":"https://doi.org/10.1063/1.1326482","mag":"1968197882"},"language":"en","primary_location":{"id":"doi:10.1063/1.1326482","doi":"https://doi.org/10.1063/1.1326482","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1326482","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109925147","display_name":"Wen-Jie Qi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wen-Jie Qi","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061695414","display_name":"R. Nieh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Renee Nieh","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105983024","display_name":"Byoung Hun Lee","orcid":"https://orcid.org/0000-0002-4540-7731","observed_orcids":["https://orcid.org/0000-0002-4540-7731","https://orcid.org/0000-0002-6654-4671"]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Byoung Hun Lee","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111610522","display_name":"Laegu Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Laegu Kang","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112225943","display_name":"Yongjoo Jeon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yongjoo Jeon","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067630934","display_name":"Jack C. Lee","orcid":"https://orcid.org/0000-0003-0477-8568","observed_orcids":["https://orcid.org/0000-0003-0477-8568"]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jack C. Lee","raw_affiliation_strings":["Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas\u200978758","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I86519309"],"apc_list":null,"apc_paid":null,"fwci":24.9337,"has_fulltext":false,"cited_by_count":175,"citation_normalized_percentile":{"value":0.99769512,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"77","issue":"20","first_page":"3269","last_page":"3271"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zirconia-thin-films","display_name":"zirconia thin films","score":0.7540000081062317},{"id":"https://openalex.org/keywords/zirconia","display_name":"zirconia","score":0.7789999842643738},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"gate dielectric","score":0.8360000252723694},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.6859999895095825},{"id":"https://openalex.org/keywords/reactive-sputtering","display_name":"reactive sputtering","score":0.9760000109672546},{"id":"https://openalex.org/keywords/equivalent-oxide-thickness","display_name":"equivalent oxide thickness","score":0.9629999995231628},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9929999709129333},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.8199999928474426},{"id":"https://openalex.org/keywords/capacitance-voltage-characteristics","display_name":"capacitance-voltage characteristics","score":0.9750000238418579},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.9020000100135803},{"id":"https://openalex.org/keywords/time-dependent-dielectric-breakdown","display_name":"time-dependent dielectric breakdown","score":0.9959999918937683},{"id":"https://openalex.org/keywords/stress-induced-leakage-current","display_name":"stress-induced leakage current","score":0.9610000252723694},{"id":"https://openalex.org/keywords/dielectric-breakdown","display_name":"dielectric breakdown","score":0.593999981880188},{"id":"https://openalex.org/keywords/reliability","display_name":"reliability","score":0.47200000286102295}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7860009670257568},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6961088180541992},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.657602846622467},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6315093040466309},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5556817650794983},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5210070610046387},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.504876434803009},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4951407015323639},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.46185576915740967},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.457640141248703},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3891669809818268},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.3877822756767273},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2663673162460327},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10777989029884338},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08989053964614868},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08507952094078064},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06854075193405151},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1326482","doi":"https://doi.org/10.1063/1.1326482","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1326482","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1964237541","https://openalex.org/W1966638092","https://openalex.org/W1970200102","https://openalex.org/W1980846940","https://openalex.org/W1995093167","https://openalex.org/W2021995721","https://openalex.org/W2026668005","https://openalex.org/W2042597481","https://openalex.org/W2043886850","https://openalex.org/W2060706824","https://openalex.org/W2072451721","https://openalex.org/W2088138546","https://openalex.org/W2101781928","https://openalex.org/W2103217035"],"related_works":["https://openalex.org/W2087563453","https://openalex.org/W1992343392","https://openalex.org/W2387093136","https://openalex.org/W2033365032","https://openalex.org/W2034440359","https://openalex.org/W1555753450","https://openalex.org/W1993597105","https://openalex.org/W1972049449","https://openalex.org/W2543055650","https://openalex.org/W2068948502"],"abstract_inverted_index":{"ZrO":[0],"2":[1],"thin":[2],"film":[3],"has":[4,48],"been":[5,49,71,95],"studied":[6],"as":[7],"an":[8,55],"alternative":[9],"gate":[10],"dielectric.":[11],"It":[12],"was":[13],"deposited":[14],"directly":[15],"on":[16],"a":[17,33],"Si":[18],"substrate":[19],"by":[20],"reactive":[21],"sputtering.":[22],"An":[23],"equivalent":[24],"oxide":[25],"thickness":[26],"of":[27,36,59],"less":[28,60],"than":[29,61],"11":[30],"\u00c5":[31],"with":[32,54],"leakage":[34,87],"current":[35],"1.9\u00d710\u22123":[37],"A/cm2":[38],"at":[39],"\u22121.5":[40],"V":[41],"relative":[42],"to":[43],"the":[44],"flat":[45],"band":[46],"voltage":[47],"obtained.":[50,96],"Well-behaved":[51],"capacitance\u2013voltage":[52],"characteristics":[53],"interface":[56],"state":[57],"density":[58],"1011":[62],"cm\u22122":[63],"eV\u22121":[64],"and":[65,89],"no":[66],"significant":[67],"frequency":[68],"dispersion":[69],"have":[70,93],"achieved.":[72],"Excellent":[73],"reliability":[74],"properties":[75],"(e.g.,":[76],"low":[77,85],"charge":[78],"trapping":[79],"rate,":[80],"good":[81],"time-dependent":[82],"dielectric":[83,91],"breakdown,":[84],"stress-induced":[86],"current,":[88],"high":[90],"breakdown)":[92],"also":[94]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":9},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":7}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}