{"id":"https://openalex.org/W1967763577","doi":"https://doi.org/10.1016/j.microrel.2004.02.015","title":"Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET","display_name":"Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET","publication_year":2004,"publication_date":"2004-08-04","ids":{"openalex":"https://openalex.org/W1967763577","doi":"https://doi.org/10.1016/j.microrel.2004.02.015","mag":"1967763577"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2004.02.015","doi":"https://doi.org/10.1016/j.microrel.2004.02.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.02.015","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112188155","display_name":"Shyue Seng Tan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Shyue Seng Tan","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018298857","display_name":"T. P. Chen","orcid":"https://orcid.org/0000-0002-1098-9575","observed_orcids":["https://orcid.org/0000-0002-1098-9575"]},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Tu Pei Chen","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102244194","display_name":"Chew Hoe Ang","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chew Hoe Ang","raw_affiliation_strings":["Department of Technology Development, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, Singapore 738406, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Technology Development, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, Singapore 738406, Singapore","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113562860","display_name":"Lap Chan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lap Chan","raw_affiliation_strings":["Department of Technology Development, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, Singapore 738406, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Technology Development, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, Singapore 738406, Singapore","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5018298857"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":{"value":2280,"currency":"USD","value_usd":2280},"apc_paid":null,"fwci":5.6984,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.95765584,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"45","issue":"1","first_page":"19","last_page":"30"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"negative bias temperature instability","score":0.9449999928474426},{"id":"https://openalex.org/keywords/p-mosfet","display_name":"pMOSFET","score":0.9959999918937683},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.953000009059906},{"id":"https://openalex.org/keywords/interface-state-generation","display_name":"interface state generation","score":0.7680000066757202},{"id":"https://openalex.org/keywords/fixed-oxide-charge","display_name":"fixed oxide charge","score":0.7689999938011169},{"id":"https://openalex.org/keywords/hydrogen-trapping","display_name":"hydrogen trapping","score":0.75},{"id":"https://openalex.org/keywords/reaction-energy","display_name":"reaction energy","score":0.7329999804496765},{"id":"https://openalex.org/keywords/oxide-si-interface","display_name":"oxide/Si interface","score":0.7490000128746033},{"id":"https://openalex.org/keywords/nitrogen-content","display_name":"nitrogen content","score":0.3569999933242798}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8822280168533325},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.6785556077957153},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.6711630821228027},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.611374020576477},{"id":"https://openalex.org/C46000676","wikidata":"https://www.wikidata.org/wiki/Q804644","display_name":"Lone pair","level":3,"score":0.5190466046333313},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.5005922317504883},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4627660810947418},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4546736180782318},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4470698833465576},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.42478734254837036},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.4128507673740387},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3598102331161499},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24737736582756042},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1218332052230835},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08806675672531128},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.08766767382621765},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2004.02.015","doi":"https://doi.org/10.1016/j.microrel.2004.02.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.02.015","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W125753325","https://openalex.org/W1753471395","https://openalex.org/W1849496688","https://openalex.org/W1927997555","https://openalex.org/W1967736263","https://openalex.org/W1969809838","https://openalex.org/W1972949192","https://openalex.org/W1976246102","https://openalex.org/W1982356449","https://openalex.org/W1983314834","https://openalex.org/W1984324653","https://openalex.org/W1990804858","https://openalex.org/W1991782916","https://openalex.org/W1996668251","https://openalex.org/W2001664149","https://openalex.org/W2016884976","https://openalex.org/W2021750186","https://openalex.org/W2023271753","https://openalex.org/W2037491499","https://openalex.org/W2037752059","https://openalex.org/W2040021993","https://openalex.org/W2040091297","https://openalex.org/W2043327462","https://openalex.org/W2068162145","https://openalex.org/W2081048183","https://openalex.org/W2121344829","https://openalex.org/W2122507955","https://openalex.org/W2134749475","https://openalex.org/W2135362953","https://openalex.org/W2136598943","https://openalex.org/W2156691787","https://openalex.org/W2160115110","https://openalex.org/W2468519520","https://openalex.org/W2536121603"],"related_works":["https://openalex.org/W1975252151","https://openalex.org/W2313774355","https://openalex.org/W1991782916","https://openalex.org/W2272986226","https://openalex.org/W2001664149","https://openalex.org/W2118294020","https://openalex.org/W2132453866","https://openalex.org/W1541673895","https://openalex.org/W1965956200","https://openalex.org/W2165137790"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}