{"id":"https://openalex.org/W1967488688","doi":"https://doi.org/10.1063/1.119304","title":"Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate","display_name":"Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate","publication_year":1997,"publication_date":"1997-01-06","ids":{"openalex":"https://openalex.org/W1967488688","doi":"https://doi.org/10.1063/1.119304","mag":"1967488688"},"language":"en","primary_location":{"id":"doi:10.1063/1.119304","doi":"https://doi.org/10.1063/1.119304","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119304","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025466067","display_name":"T.-S. Chao","orcid":"https://orcid.org/0000-0001-5842-4437","observed_orcids":["https://orcid.org/0000-0001-5842-4437"]},"institutions":[{"id":"https://openalex.org/I4210142029","display_name":"Institute of Electrophysics","ror":"https://ror.org/051jjt714","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210119369","https://openalex.org/I4210142029"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"T. S. Chao","raw_affiliation_strings":["National Nano Device Laboratory, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China","Department of Electrophysics"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Nano Device Laboratory, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China","institution_ids":[]},{"raw_affiliation_string":"Department of Electrophysics","institution_ids":["https://openalex.org/I4210142029"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003753441","display_name":"C. H. Chu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. H. Chu","raw_affiliation_strings":["National Nano Device Laboratory, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Nano Device Laboratory, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.4423,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.78201913,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"70","issue":"1","first_page":"55","last_page":"56"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9448000192642212,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9448000192642212,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.026000000536441803,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.00419999985024333,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bf2-ion-implantation","display_name":"BF2 implantation","score":0.9210000038146973},{"id":"https://openalex.org/keywords/polysilicon-gate","display_name":"polysilicon gate","score":0.9919999837875366},{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.9950000047683716},{"id":"https://openalex.org/keywords/mosfet-gate","display_name":"MOSFET gate","score":0.6869999766349792},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.6690000295639038}],"concepts":[{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.8203043341636658},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.770054042339325},{"id":"https://openalex.org/C80107235","wikidata":"https://www.wikidata.org/wiki/Q7162625","display_name":"Penetration (warfare)","level":2,"score":0.7006378173828125},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6994689702987671},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.6537814736366272},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.6129035353660583},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.496429979801178},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.4866429269313812},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4425256848335266},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.4278775751590729},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34677308797836304},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27261245250701904},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.25976312160491943},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16724884510040283},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.16364803910255432},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.13560035824775696},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.05704665184020996},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.0},{"id":"https://openalex.org/C42475967","wikidata":"https://www.wikidata.org/wiki/Q194292","display_name":"Operations research","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.119304","doi":"https://doi.org/10.1063/1.119304","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119304","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1964734728","https://openalex.org/W2078789051","https://openalex.org/W2133096692","https://openalex.org/W2138108288","https://openalex.org/W2145536332","https://openalex.org/W2160873117","https://openalex.org/W2168018821"],"related_works":["https://openalex.org/W1966112843","https://openalex.org/W2126080018","https://openalex.org/W2025332384","https://openalex.org/W2012955806","https://openalex.org/W2071307577","https://openalex.org/W4253233005","https://openalex.org/W631687564","https://openalex.org/W1903802377","https://openalex.org/W2040201813","https://openalex.org/W7038577193"],"abstract_inverted_index":{"A":[0,24],"novel":[1],"and":[2,54],"simple":[3],"method":[4],"to":[5],"suppress":[6],"the":[7,11,20,30,41,44],"boron":[8,52],"penetration":[9,53],"in":[10],"BF2+-implanted":[12],"polycrystalline":[13],"silicon":[14],"gate":[15],"is":[16],"presented":[17],"by":[18,33],"using":[19,34],"inductive-coupling-nitrogen-plasma":[21],"(ICNP)":[22],"process.":[23],"nitrogen":[25],"layer":[26],"was":[27],"found":[28],"at":[29],"SiO2/Si":[31],"interface":[32],"this":[35],"method.":[36],"The":[37],"result":[38],"shows":[39],"that":[40],"sample":[42],"with":[43],"ICNP":[45],"treatment":[46],"exhibits":[47],"a":[48],"good":[49],"suppression":[50],"of":[51],"improved":[55],"electrical":[56],"characteristics.":[57]},"counts_by_year":[],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2016-06-24T00:00:00"}