{"id":"https://openalex.org/W1966648971","doi":"https://doi.org/10.1063/1.1753086","title":"Field effect on planar devices made of epitaxial manganite perovskites","display_name":"Field effect on planar devices made of epitaxial manganite perovskites","publication_year":2004,"publication_date":"2004-05-28","ids":{"openalex":"https://openalex.org/W1966648971","doi":"https://doi.org/10.1063/1.1753086","mag":"1966648971"},"language":"en","primary_location":{"id":"doi:10.1063/1.1753086","doi":"https://doi.org/10.1063/1.1753086","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1753086","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080016172","display_name":"I. Pallecchi","orcid":"https://orcid.org/0000-0001-6819-6124","observed_orcids":["https://orcid.org/0000-0001-6819-6124"]},"institutions":[{"id":"https://openalex.org/I4210163092","display_name":"Istituto Nazionale per la Fisica della Materia","ror":"https://ror.org/02kswma64","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210163092"]},{"id":"https://openalex.org/I83816512","display_name":"University of Genoa","ror":"https://ror.org/0107c5v14","country_code":"IT","type":"education","lineage":["https://openalex.org/I83816512"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"I. Pallecchi","raw_affiliation_strings":["INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy","institution_ids":["https://openalex.org/I4210163092","https://openalex.org/I83816512"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089955833","display_name":"L. Pellegrino","orcid":"https://orcid.org/0000-0003-2051-4837","observed_orcids":["https://orcid.org/0000-0003-2051-4837"]},"institutions":[{"id":"https://openalex.org/I4210163092","display_name":"Istituto Nazionale per la Fisica della Materia","ror":"https://ror.org/02kswma64","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210163092"]},{"id":"https://openalex.org/I83816512","display_name":"University of Genoa","ror":"https://ror.org/0107c5v14","country_code":"IT","type":"education","lineage":["https://openalex.org/I83816512"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"L. Pellegrino","raw_affiliation_strings":["INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy","institution_ids":["https://openalex.org/I4210163092","https://openalex.org/I83816512"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080433285","display_name":"E. Bellingeri","orcid":"https://orcid.org/0000-0001-7902-0706","observed_orcids":["https://orcid.org/0000-0001-7902-0706"]},"institutions":[{"id":"https://openalex.org/I4210163092","display_name":"Istituto Nazionale per la Fisica della Materia","ror":"https://ror.org/02kswma64","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210163092"]},{"id":"https://openalex.org/I83816512","display_name":"University of Genoa","ror":"https://ror.org/0107c5v14","country_code":"IT","type":"education","lineage":["https://openalex.org/I83816512"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Bellingeri","raw_affiliation_strings":["INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy","institution_ids":["https://openalex.org/I4210163092","https://openalex.org/I83816512"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022111858","display_name":"Antonio Sergio Siri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210163092","display_name":"Istituto Nazionale per la Fisica della Materia","ror":"https://ror.org/02kswma64","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210163092"]},{"id":"https://openalex.org/I83816512","display_name":"University of Genoa","ror":"https://ror.org/0107c5v14","country_code":"IT","type":"education","lineage":["https://openalex.org/I83816512"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. S. Siri","raw_affiliation_strings":["INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy","institution_ids":["https://openalex.org/I4210163092","https://openalex.org/I83816512"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013026571","display_name":"Daniele Marr\u00e9","orcid":"https://orcid.org/0000-0002-6230-761X","observed_orcids":["https://orcid.org/0000-0002-6230-761X"]},"institutions":[{"id":"https://openalex.org/I4210163092","display_name":"Istituto Nazionale per la Fisica della Materia","ror":"https://ror.org/02kswma64","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210163092"]},{"id":"https://openalex.org/I83816512","display_name":"University of Genoa","ror":"https://ror.org/0107c5v14","country_code":"IT","type":"education","lineage":["https://openalex.org/I83816512"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Marr\u00e9","raw_affiliation_strings":["INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-LAMIA, Dipartimento di Fisica, Universit\u00e0 di Genova, via Dodecaneso 33, 16146\u2009Genova, Italy","institution_ids":["https://openalex.org/I4210163092","https://openalex.org/I83816512"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.5959,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.81254498,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"95","issue":"12","first_page":"8079","last_page":"8086"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10607","display_name":"Magnetic and transport properties of perovskites and related materials","score":0.475600004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10607","display_name":"Magnetic and transport properties of perovskites and related materials","score":0.475600004196167,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.42989999055862427,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.033399999141693115,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field-effect-devices","display_name":"field-effect devices","score":0.8100000023841858},{"id":"https://openalex.org/keywords/perovskite-manganites","display_name":"perovskite manganites","score":0.8299999833106995},{"id":"https://openalex.org/keywords/la0-67ba0-33mno3","display_name":"La0.67Ba0.33MnO3","score":0.9459999799728394},{"id":"https://openalex.org/keywords/srtio3-substrate","display_name":"SrTiO3 substrate","score":0.9419999718666077},{"id":"https://openalex.org/keywords/epitaxial-oxide-thin-films","display_name":"epitaxial oxide thin films","score":0.765999972820282},{"id":"https://openalex.org/keywords/metal-insulator-transition","display_name":"metal-insulator transition","score":0.7900000214576721},{"id":"https://openalex.org/keywords/oxide-electronics","display_name":"oxide electronics","score":0.6610000133514404},{"id":"https://openalex.org/keywords/resistance-modulation","display_name":"resistance modulation","score":0.3790000081062317}],"concepts":[{"id":"https://openalex.org/C2779700590","wikidata":"https://www.wikidata.org/wiki/Q401047","display_name":"Manganite","level":3,"score":0.9332716464996338},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7860509753227234},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.667452335357666},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6543917059898376},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6223533153533936},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5296798944473267},{"id":"https://openalex.org/C155011858","wikidata":"https://www.wikidata.org/wiki/Q3036449","display_name":"Perovskite (structure)","level":2,"score":0.47206857800483704},{"id":"https://openalex.org/C168651791","wikidata":"https://www.wikidata.org/wiki/Q211569","display_name":"Permittivity","level":3,"score":0.4486260712146759},{"id":"https://openalex.org/C31500677","wikidata":"https://www.wikidata.org/wiki/Q4533278","display_name":"Field effect","level":2,"score":0.4436550438404083},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.4433930516242981},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4430854618549347},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.32422828674316406},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3205419182777405},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32009196281433105},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2490234375},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.24314472079277039},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.133819580078125},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09876713156700134},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.06383088231086731},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.1753086","doi":"https://doi.org/10.1063/1.1753086","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1753086","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:iris.unige.it:11567/247630","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/11567/247630","pdf_url":null,"source":{"id":"https://openalex.org/S4377196291","display_name":"CINECA IRIS Institutial Research Information System (University of Genoa)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I83816512","host_organization_name":"University of Genoa","host_organization_lineage":["https://openalex.org/I83816512"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W41993983","https://openalex.org/W1513891020","https://openalex.org/W1621595806","https://openalex.org/W1623647921","https://openalex.org/W1649026130","https://openalex.org/W1670083416","https://openalex.org/W1678541249","https://openalex.org/W1965350997","https://openalex.org/W1977794185","https://openalex.org/W1978208826","https://openalex.org/W1983551262","https://openalex.org/W1985634384","https://openalex.org/W1986046112","https://openalex.org/W1986067802","https://openalex.org/W1987008102","https://openalex.org/W2003206030","https://openalex.org/W2006292885","https://openalex.org/W2023421691","https://openalex.org/W2025823629","https://openalex.org/W2026084349","https://openalex.org/W2031366596","https://openalex.org/W2035041401","https://openalex.org/W2040664449","https://openalex.org/W2045271309","https://openalex.org/W2050165414","https://openalex.org/W2050222000","https://openalex.org/W2051166513","https://openalex.org/W2066916806","https://openalex.org/W2071542892","https://openalex.org/W2071893424","https://openalex.org/W2072865736","https://openalex.org/W2078587308","https://openalex.org/W2083627279","https://openalex.org/W2086157650","https://openalex.org/W2092942819","https://openalex.org/W2094191685","https://openalex.org/W2138323937"],"related_works":["https://openalex.org/W1985634384","https://openalex.org/W2053493089","https://openalex.org/W2139625424","https://openalex.org/W2072865736","https://openalex.org/W1965770037","https://openalex.org/W2099135754","https://openalex.org/W1977158534","https://openalex.org/W1994729279","https://openalex.org/W2096595863","https://openalex.org/W2580849119"],"abstract_inverted_index":{"Planar":[0],"side":[1],"gate":[2,28,67],"devices":[3,55,108],"are":[4,41],"fabricated":[5],"with":[6],"epitaxial":[7,111],"perovskite":[8],"oxides":[9,112],"by":[10,94],"means":[11],"of":[12,17,25,37,48,69,76,97],"the":[13,26,33,38,77,98],"voltage":[14,68],"biased":[15],"tip":[16],"an":[18],"atomic":[19],"force":[20],"microscope.":[21],"The":[22],"high":[23,34],"performance":[24],"insulating":[27],"barriers":[29],"as":[30,32],"well":[31],"dielectric":[35],"permittivity":[36],"chosen":[39],"substrate":[40],"exploited":[42],"to":[43,82],"obtain":[44],"a":[45,57,61,66,74,88],"remarkable":[46],"value":[47],"accumulated/depleted":[49],"charge.":[50],"We":[51],"fabricate":[52],"field":[53,89],"effect":[54,90],"having":[56],"La0.67Ba0.33MnO3":[58],"channel":[59,79],"on":[60,110],"SrTiO3":[62],"substrate.":[63],"By":[64],"applying":[65],"+/\u221260":[70],"V":[71],"we":[72],"observe":[73],"modulation":[75],"manganite":[78],"resistance":[80],"up":[81],"150%":[83],"at":[84],"low":[85],"temperatures.":[86],"Furthermore,":[87],"induced":[91],"reversible":[92],"shift":[93],"3.2":[95],"K":[96],"metal-insulator":[99],"transition":[100],"temperature":[101],"is":[102],"observed.":[103],"This":[104],"technology":[105],"for":[106],"prototype":[107],"based":[109],"opens":[113],"perspectives":[114],"in":[115],"oxide":[116],"electronics":[117],"applications.":[118]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}