{"id":"https://openalex.org/W1964998474","doi":"https://doi.org/10.1063/1.1735062","title":"Two-Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches","display_name":"Two-Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches","publication_year":1959,"publication_date":"1959-11-01","ids":{"openalex":"https://openalex.org/W1964998474","doi":"https://doi.org/10.1063/1.1735062","mag":"1964998474"},"language":"en","primary_location":{"id":"doi:10.1063/1.1735062","doi":"https://doi.org/10.1063/1.1735062","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1735062","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"R. W. Aldrich","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1332737386","display_name":"General Electric (United States)","ror":"https://ror.org/013msgt25","country_code":"US","type":"company","lineage":["https://openalex.org/I1332737386"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. W. Aldrich","raw_affiliation_strings":["General Electric Company, Electronics Park, Syracuse, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"General Electric Company, Electronics Park, Syracuse, New York","institution_ids":["https://openalex.org/I1332737386"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014677470","display_name":"N. Holonyak","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1332737386","display_name":"General Electric (United States)","ror":"https://ror.org/013msgt25","country_code":"US","type":"company","lineage":["https://openalex.org/I1332737386"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. Holonyak","raw_affiliation_strings":["General Electric Company, Electronics Park, Syracuse, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"General Electric Company, Electronics Park, Syracuse, New York","institution_ids":["https://openalex.org/I1332737386"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1332737386"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.7924,"has_fulltext":false,"cited_by_count":43,"citation_normalized_percentile":{"value":0.80713342,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"30","issue":"11","first_page":"1819","last_page":"1824"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5737000107765198,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5737000107765198,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.15080000460147858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.07649999856948853,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.5839999914169312},{"id":"https://openalex.org/keywords/semiconductor-switching-devices","display_name":"semiconductor switches","score":0.42500001192092896}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6469774842262268},{"id":"https://openalex.org/C2779664074","wikidata":"https://www.wikidata.org/wiki/Q3518405","display_name":"Terminal (telecommunication)","level":2,"score":0.6259422302246094},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5802640318870544},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.5097793936729431},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45637524127960205},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.4456876218318939},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23434710502624512},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1273641586303711},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07674086093902588},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1735062","doi":"https://doi.org/10.1063/1.1735062","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1735062","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"id":"https://metadata.un.org/sdg/7","score":0.41999998688697815,"display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1999214928","https://openalex.org/W2021958873","https://openalex.org/W2042322242","https://openalex.org/W2044332649","https://openalex.org/W2073269429"],"related_works":["https://openalex.org/W2042322242","https://openalex.org/W2437828055","https://openalex.org/W2005982418","https://openalex.org/W7026139543","https://openalex.org/W2057651290","https://openalex.org/W2050744557","https://openalex.org/W2044332649","https://openalex.org/W2058745633","https://openalex.org/W402027210","https://openalex.org/W1517163373"],"abstract_inverted_index":{"By":[0],"making":[1],"use":[2],"of":[3,20],"an":[4,13],"emitter":[5],"region":[6],"shorted":[7],"by":[8],"a":[9,17,31],"metallic":[10],"contact":[11],"to":[12,48],"adjacent":[14],"base":[15],"region,":[16],"new":[18,26],"form":[19],"p-n-p-n":[21],"switch":[22],"is":[23],"obtained.":[24],"Several":[25],"structures":[27],"are":[28,51],"described,":[29],"including":[30],"symmetrical":[32],"(or":[33],"ac)":[34],"switch.":[35],"Typical":[36],"experimental":[37],"results":[38],"on":[39],"switches":[40],"which":[41],"breakdown":[42],"in":[43],"the":[44],"range":[45],"from":[46],"25":[47],"40":[49],"v":[50],"presented.":[52]},"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}