{"id":"https://openalex.org/W1964012202","doi":"https://doi.org/10.1063/1.367838","title":"Spin-dependent tunneling junctions with hard magnetic layer pinning","display_name":"Spin-dependent tunneling junctions with hard magnetic layer pinning","publication_year":1998,"publication_date":"1998-06-01","ids":{"openalex":"https://openalex.org/W1964012202","doi":"https://doi.org/10.1063/1.367838","mag":"1964012202"},"language":"en","primary_location":{"id":"doi:10.1063/1.367838","doi":"https://doi.org/10.1063/1.367838","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.367838","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031420339","display_name":"J. F. Bobo","orcid":"https://orcid.org/0000-0003-1907-1290","observed_orcids":["https://orcid.org/0000-0003-1907-1290"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. F. Bobo","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038218469","display_name":"F. B. Mancoff","orcid":"https://orcid.org/0000-0002-0997-2522","observed_orcids":["https://orcid.org/0000-0002-0997-2522"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. B. Mancoff","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109655639","display_name":"K. Bessho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Bessho","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101640414","display_name":"Manish Sharma","orcid":"https://orcid.org/0000-0003-1501-693X","observed_orcids":["https://orcid.org/0000-0003-1501-693X"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Sharma","raw_affiliation_strings":["Electrical Engineering, Stanford University, Stanford, California\u200994305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering, Stanford University, Stanford, California\u200994305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026737670","display_name":"Kyusik Sin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Sin","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088633123","display_name":"D. Guarisco","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Guarisco","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109218627","display_name":"S.X. Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. X. Wang","raw_affiliation_strings":["Electrical Engineering, Stanford University, Stanford, California\u200994305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering, Stanford University, Stanford, California\u200994305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084918636","display_name":"Bruce M. Clemens","orcid":"https://orcid.org/0000-0001-6070-9140","observed_orcids":["https://orcid.org/0000-0001-6070-9140"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. M. Clemens","raw_affiliation_strings":["Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Stanford University, Stanford, California\u200994305-2205","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":3.2975,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.92208602,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":"83","issue":"11","first_page":"6685","last_page":"6687"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-dependent-tunneling","display_name":"spin-dependent tunneling","score":0.8740000128746033},{"id":"https://openalex.org/keywords/antiparallel-magnetization","display_name":"antiparallel magnetization","score":0.9449999928474426},{"id":"https://openalex.org/keywords/al2o3-tunnel-barrier","display_name":"Al2O3 tunnel barrier","score":0.8840000033378601},{"id":"https://openalex.org/keywords/room-temperature-magnetoresistance","display_name":"room-temperature magnetoresistance","score":0.8650000095367432},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.8410000205039978},{"id":"https://openalex.org/keywords/depth-profiling","display_name":"depth profiling","score":0.46799999475479126}],"concepts":[{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.7823423743247986},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7718809843063354},{"id":"https://openalex.org/C117958382","wikidata":"https://www.wikidata.org/wiki/Q58347","display_name":"Magnetoresistance","level":3,"score":0.7163693904876709},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.7036713361740112},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6684272289276123},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.5888484716415405},{"id":"https://openalex.org/C126530901","wikidata":"https://www.wikidata.org/wiki/Q432635","display_name":"Coercivity","level":2,"score":0.5835287570953369},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.5820519328117371},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.484031617641449},{"id":"https://openalex.org/C142089489","wikidata":"https://www.wikidata.org/wiki/Q1053976","display_name":"Antiparallel (mathematics)","level":3,"score":0.44875794649124146},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.4187558889389038},{"id":"https://openalex.org/C2779833192","wikidata":"https://www.wikidata.org/wiki/Q17015866","display_name":"Barrier layer","level":3,"score":0.41667497158050537},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3694979250431061},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.3110339641571045},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17080199718475342},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.16309785842895508},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13278895616531372},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1265072524547577},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.367838","doi":"https://doi.org/10.1063/1.367838","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.367838","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1964234146","https://openalex.org/W1967393072","https://openalex.org/W1981090962","https://openalex.org/W1986569317","https://openalex.org/W1996418689","https://openalex.org/W2009746580","https://openalex.org/W2054222156","https://openalex.org/W2060798601","https://openalex.org/W2072790036","https://openalex.org/W2080659521","https://openalex.org/W2084766087","https://openalex.org/W2086768702"],"related_works":["https://openalex.org/W2007129874","https://openalex.org/W1966060835","https://openalex.org/W2003122542","https://openalex.org/W1968170905","https://openalex.org/W2017051144","https://openalex.org/W2093028548","https://openalex.org/W1994846439","https://openalex.org/W2067031957","https://openalex.org/W1505977290","https://openalex.org/W1966539588"],"abstract_inverted_index":{"We":[0],"have":[1],"fabricated":[2],"ferromagnet-insulator-ferromagnet":[3],"tunnel":[4],"junctions":[5],"with":[6,17,72],"Co":[7,13,35,116],"and":[8,92],"NiFe":[9,41],"electrodes,":[10],"where":[11],"the":[12,34,40,80,101],"electrodes":[14],"are":[15,97],"pinned":[16],"a":[18,27,52,119],"hard":[19],"magnetic":[20],"Co81Pt19":[21],"alloy":[22],"layer.":[23],"This":[24],"approach":[25],"gives":[26],"coercivity":[28],"of":[29,39,68,110,121],"about":[30,43],"300":[31],"Oe":[32],"for":[33],"layer,":[36],"while":[37],"that":[38,96],"is":[42],"80":[44],"Oe,":[45],"so":[46],"we":[47,82],"obtain":[48],"antiparallel":[49],"magnetization":[50],"over":[51],"wide":[53],"field":[54],"range.":[55],"The":[56],"Al2O3":[57],"tunneling":[58,103],"barrier":[59,113],"layers":[60,71,114],"were":[61],"formed":[62],"by":[63,100],"in":[64],"situ":[65],"plasma":[66],"oxidation":[67],"elemental":[69],"Al":[70,112],"thicknesses":[73],"from":[74],"10":[75],"to":[76],"25":[77],"\u00c5.":[78],"For":[79],"junctions,":[81],"find":[83],"room":[84],"temperature":[85],"magnetoresistance":[86],"ratios":[87],"as":[88,90],"high":[89],"13%":[91],"nonlinear":[93],"current\u2013voltage":[94],"curves":[95],"well":[98],"fit":[99],"Simmons":[102],"theory.":[104],"Depth":[105],"profiling":[106],"x-ray":[107],"photoelectron":[108],"spectroscopy":[109],"oxidized":[111],"on":[115],"underlayers":[117],"reveals":[118],"stoichiometry":[120],"nearly":[122],"Al2O3.":[123]},"counts_by_year":[],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}