{"id":"https://openalex.org/W1955327661","doi":null,"title":"Threshold current density in optimized UV diode lasers based on gallium nitride","display_name":"Threshold current density in optimized UV diode lasers based on gallium nitride","publication_year":1996,"publication_date":"1996-06-02","ids":{"openalex":"https://openalex.org/W1955327661","mag":"1955327661"},"language":"en","primary_location":{"id":"mag:1955327661","doi":null,"is_oa":false,"landing_page_url":"https://ieeexplore.ieee.org/document/864920/","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113671138","display_name":"Petr G. Eliseev","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I169521973","display_name":"University of New Mexico","ror":"https://ror.org/05fs6jp91","country_code":"US","type":"education","lineage":["https://openalex.org/I169521973"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Petr G. Eliseev","raw_affiliation_strings":["Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA","institution_ids":["https://openalex.org/I169521973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113057965","display_name":"V.A. Smagley","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I169521973","display_name":"University of New Mexico","ror":"https://ror.org/05fs6jp91","country_code":"US","type":"education","lineage":["https://openalex.org/I169521973"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"V.G. Smagley","raw_affiliation_strings":["Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA","institution_ids":["https://openalex.org/I169521973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062764195","display_name":"Marek Osi\u0144ski","orcid":"https://orcid.org/0000-0002-3989-991X","observed_orcids":["https://orcid.org/0000-0002-3989-991X"]},"institutions":[{"id":"https://openalex.org/I169521973","display_name":"University of New Mexico","ror":"https://ror.org/05fs6jp91","country_code":"US","type":"education","lineage":["https://openalex.org/I169521973"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marek Osi\u0144ski","raw_affiliation_strings":["Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA","institution_ids":["https://openalex.org/I169521973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I169521973"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"457","last_page":"458"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-current-density","display_name":"threshold current density","score":0.9110000133514404},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.984000027179718},{"id":"https://openalex.org/keywords/spontaneous-emission","display_name":"spontaneous emission","score":0.8360000252723694},{"id":"https://openalex.org/keywords/gain-spectrum","display_name":"gain spectrum","score":0.8009999990463257},{"id":"https://openalex.org/keywords/radiative-recombination-rate","display_name":"radiative recombination rate","score":0.9729999899864197},{"id":"https://openalex.org/keywords/nonradiative-recombination","display_name":"nonradiative recombination","score":0.9490000009536743},{"id":"https://openalex.org/keywords/photopumping","display_name":"photopumping","score":0.8769999742507935},{"id":"https://openalex.org/keywords/effective-mass","display_name":"effective mass","score":0.6169999837875366},{"id":"https://openalex.org/keywords/excess-carrier-density","display_name":"excess carrier density","score":0.9110000133514404}],"concepts":[{"id":"https://openalex.org/C111154242","wikidata":"https://www.wikidata.org/wiki/Q923545","display_name":"Spontaneous emission","level":3,"score":0.7153998613357544},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6337317228317261},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6099621057510376},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5948309898376465},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5843179821968079},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5739097595214844},{"id":"https://openalex.org/C156695909","wikidata":"https://www.wikidata.org/wiki/Q3373825","display_name":"Recombination","level":3,"score":0.5598670244216919},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.5379446744918823},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.47975099086761475},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.4729974865913391},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.4700671136379242},{"id":"https://openalex.org/C109724073","wikidata":"https://www.wikidata.org/wiki/Q1757819","display_name":"Charge-carrier density","level":3,"score":0.4604099690914154},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.4519694149494171},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.450851172208786},{"id":"https://openalex.org/C4839761","wikidata":"https://www.wikidata.org/wiki/Q212111","display_name":"Spectral line","level":2,"score":0.4452991485595703},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.44422027468681335},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.4432965815067291},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.42816847562789917},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2713405191898346},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20662003755569458},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20404699444770813},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.14379119873046875},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.1313292682170868},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C77805123","wikidata":"https://www.wikidata.org/wiki/Q161272","display_name":"Social psychology","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:1955327661","doi":null,"is_oa":false,"landing_page_url":"https://ieeexplore.ieee.org/document/864920/","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3166177896","https://openalex.org/W1978027737","https://openalex.org/W4321635580","https://openalex.org/W2314780578","https://openalex.org/W1984655734","https://openalex.org/W3026813532","https://openalex.org/W1994200584","https://openalex.org/W2093966727","https://openalex.org/W2008311212","https://openalex.org/W2568105068"],"abstract_inverted_index":{"Summary":[0],"form":[1],"only":[2],"given.":[3],"In":[4],"this":[5],"work,":[6],"a":[7],"theoretical":[8],"analysis":[9],"is":[10,39,45],"performed":[11],"of":[12,20,26,32,50,69,74],"GaN":[13],"spontaneous":[14],"emission":[15],"and":[16,19,52,56],"gain":[17],"spectra":[18],"radiative":[21],"recombination":[22,34],"rate":[23],"in":[24,35],"function":[25],"excess":[27],"carrier":[28],"density":[29],"N.":[30],"Contribution":[31],"nonradiative":[33],"published":[36],"photopumping":[37],"data":[38],"estimated.":[40],"A":[41],"nonparabolic":[42],"band":[43],"model":[44],"used":[46],"with":[47],"several":[48],"values":[49,73],"electron":[51],"hole":[53],"effective":[54],"masses":[55],"intraband":[57],"relaxation":[58],"times":[59],"(from":[60],"26":[61],"to":[62],"500":[63],"fs)":[64],"that":[65],"span":[66],"the":[67],"range":[68],"reported":[70],"or":[71],"expected":[72],"these":[75],"parameters.":[76]},"counts_by_year":[],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}