{"id":"https://openalex.org/W1929568186","doi":"https://doi.org/10.1039/c5nr02019k","title":"Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors","display_name":"Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors","publication_year":2015,"publication_date":"2015-01-01","ids":{"openalex":"https://openalex.org/W1929568186","doi":"https://doi.org/10.1039/c5nr02019k","mag":"1929568186","pmid":"https://pubmed.ncbi.nlm.nih.gov/26098677"},"language":"en","primary_location":{"id":"doi:10.1039/c5nr02019k","doi":"https://doi.org/10.1039/c5nr02019k","is_oa":false,"landing_page_url":"https://doi.org/10.1039/c5nr02019k","pdf_url":null,"source":{"id":"https://openalex.org/S23181512","display_name":"Nanoscale","issn_l":"2040-3364","issn":["2040-3364","2040-3372"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-3","ki-jl-2","medline","norway-2","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320556","host_organization_name":"Royal Society of Chemistry","host_organization_lineage":["https://openalex.org/P4310320556"],"host_organization_lineage_names":["Royal Society of Chemistry"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","pubmed"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042266646","display_name":"Huynh Van Ngoc","orcid":"https://orcid.org/0000-0003-3093-953X","observed_orcids":["https://orcid.org/0000-0003-3093-953X"]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ngoc Huynh Van","raw_affiliation_strings":["Department of Physics","Sungkyunkwan University","Suwon 440-746, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics","institution_ids":[]},{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Suwon 440-746, Republic of Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100405192","display_name":"Jae\u2010Hyun Lee","orcid":"https://orcid.org/0000-0001-5117-8923","observed_orcids":["https://orcid.org/0000-0001-5117-8923"]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Hyun Lee","raw_affiliation_strings":["SKKU Advanced Institute of Nanotechnology","School of Advanced Materials Science and Engineering","Sungkyunkwan University","Suwon 440-746, Republic of Korea","School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University,Suwon 440-746,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SKKU Advanced Institute of Nanotechnology","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"School of Advanced Materials Science and Engineering","institution_ids":[]},{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Suwon 440-746, Republic of Korea","institution_ids":[]},{"raw_affiliation_string":"School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University,Suwon 440-746,Republic of Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060590739","display_name":"Dongmok Whang","orcid":"https://orcid.org/0000-0001-9449-0597","observed_orcids":["https://orcid.org/0000-0001-9449-0597"]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dongmok Whang","raw_affiliation_strings":["SKKU Advanced Institute of Nanotechnology","School of Advanced Materials Science and Engineering","Sungkyunkwan University","Suwon 440-746, Republic of Korea","School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University,Suwon 440-746,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SKKU Advanced Institute of Nanotechnology","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"School of Advanced Materials Science and Engineering","institution_ids":[]},{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Suwon 440-746, Republic of Korea","institution_ids":[]},{"raw_affiliation_string":"School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University,Suwon 440-746,Republic of Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061505485","display_name":"Dae Joon Kang","orcid":"https://orcid.org/0000-0002-4030-4071","observed_orcids":["https://orcid.org/0000-0002-4030-4071"]},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Dae Joon Kang","raw_affiliation_strings":["Department of Physics","Sungkyunkwan University","Suwon 440-746, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics","institution_ids":[]},{"raw_affiliation_string":"Sungkyunkwan University","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Suwon 440-746, Republic of Korea","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5061505485"],"corresponding_institution_ids":["https://openalex.org/I848706"],"apc_list":null,"apc_paid":null,"fwci":0.7767,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.74116233,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"7","issue":"27","first_page":"11660","last_page":"11666"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9487000107765198,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9487000107765198,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.03629999980330467,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.003599999938160181,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectric-gate-field-effect-transistors","display_name":"ferroelectric-gate field-effect transistors","score":0.8610000014305115},{"id":"https://openalex.org/keywords/silicon-nanowire-transistors","display_name":"silicon nanowire transistors","score":0.8690000176429749},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.8370000123977661},{"id":"https://openalex.org/keywords/p-vdf-trfe","display_name":"P(VDF-TrFE)","score":0.9490000009536743},{"id":"https://openalex.org/keywords/ultra-low-power","display_name":"ultra-low power","score":0.8679999709129333},{"id":"https://openalex.org/keywords/portable-devices","display_name":"portable devices","score":0.6610000133514404}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8072949647903442},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.7515122890472412},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6962792873382568},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6771693229675293},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.6619533896446228},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6524274349212646},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5210237503051758},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4660986661911011},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.44499388337135315},{"id":"https://openalex.org/C189366214","wikidata":"https://www.wikidata.org/wiki/Q4103842","display_name":"Ferroelectric capacitor","level":4,"score":0.42332231998443604},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3957386016845703},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3487064242362976},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06112384796142578},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.05098593235015869}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1039/c5nr02019k","doi":"https://doi.org/10.1039/c5nr02019k","is_oa":false,"landing_page_url":"https://doi.org/10.1039/c5nr02019k","pdf_url":null,"source":{"id":"https://openalex.org/S23181512","display_name":"Nanoscale","issn_l":"2040-3364","issn":["2040-3364","2040-3372"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-3","ki-jl-2","medline","norway-2","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320556","host_organization_name":"Royal Society of Chemistry","host_organization_lineage":["https://openalex.org/P4310320556"],"host_organization_lineage_names":["Royal Society of Chemistry"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale","raw_type":"journal-article"},{"id":"pmid:26098677","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/26098677","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W1966199854","https://openalex.org/W1973172657","https://openalex.org/W1977475383","https://openalex.org/W1983659288","https://openalex.org/W1983776606","https://openalex.org/W1995863792","https://openalex.org/W1998171067","https://openalex.org/W2004296990","https://openalex.org/W2005025372","https://openalex.org/W2017471958","https://openalex.org/W2022831380","https://openalex.org/W2027462055","https://openalex.org/W2035148804","https://openalex.org/W2038305545","https://openalex.org/W2040575632","https://openalex.org/W2060569940","https://openalex.org/W2061406689","https://openalex.org/W2069507281","https://openalex.org/W2076907546","https://openalex.org/W2086965868","https://openalex.org/W2092333682","https://openalex.org/W2097523479","https://openalex.org/W2109471502","https://openalex.org/W2122765769","https://openalex.org/W2129220023","https://openalex.org/W2133106529","https://openalex.org/W2140121821","https://openalex.org/W2159418325","https://openalex.org/W2160395018","https://openalex.org/W2169233042","https://openalex.org/W2315325958","https://openalex.org/W2323050605","https://openalex.org/W2326100421","https://openalex.org/W3105052005"],"related_works":["https://openalex.org/W2159418325","https://openalex.org/W2144714894","https://openalex.org/W2161559482","https://openalex.org/W2097913214","https://openalex.org/W1967870145","https://openalex.org/W2143161037","https://openalex.org/W7099753217","https://openalex.org/W2069507281","https://openalex.org/W1977078557","https://openalex.org/W2792488046"],"abstract_inverted_index":{"Nanowire-based":[0],"ferroelectric-complementary":[1],"metal-oxide-semiconductor":[2],"(NW":[3,23],"FeCMOS)":[4],"nonvolatile":[5],"memory":[6,27,48,95,104],"devices":[7,49,96],"were":[8],"successfully":[9],"fabricated":[10],"by":[11],"utilizing":[12],"single":[13,36],"n-":[14,38],"and":[15,39,55,121],"p-type":[16,40],"Si":[17,41,45,92],"nanowire":[18],"ferroelectric-gate":[19],"field":[20],"effect":[21],"transistors":[22],"FeFETs)":[24],"as":[25],"individual":[26],"cells.":[28],"In":[29],"addition":[30],"to":[31],"having":[32],"the":[33,80],"advantages":[34],"of":[35,64,84],"channel":[37],"NW":[42,46,93],"FeFET":[43],"memory,":[44],"FeCMOS":[47,94],"exhibit":[50],"a":[51],"direct":[52],"readout":[53],"voltage":[54],"ultralow":[56],"power":[57,62,82,114],"consumption.":[58],"The":[59],"reading":[60],"state":[61],"consumption":[63,83,115],"this":[65],"device":[66],"is":[67,73,116],"less":[68],"than":[69,75,79],"0.1":[70],"pW,":[71],"which":[72],"more":[74],"10(5)":[76],"times":[77],"lower":[78],"ON-state":[81],"single-channel":[85],"ferroelectric":[86],"memory.":[87],"This":[88],"result":[89],"implies":[90],"that":[91],"are":[97],"well":[98],"suited":[99],"for":[100,118],"use":[101],"in":[102,106],"non-volatile":[103],"chips":[105],"modern":[107],"portable":[108],"electronic":[109],"devices,":[110],"especially":[111],"where":[112],"low":[113],"critical":[117],"energy":[119],"conservation":[120],"long-term":[122],"use.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}