{"id":"https://openalex.org/W1925757349","doi":"https://doi.org/10.1109/led.2015.2483760","title":"Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation","display_name":"Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation","publication_year":2015,"publication_date":"2015-09-29","ids":{"openalex":"https://openalex.org/W1925757349","doi":"https://doi.org/10.1109/led.2015.2483760","mag":"1925757349"},"language":"en","primary_location":{"id":"doi:10.1109/led.2015.2483760","doi":"https://doi.org/10.1109/led.2015.2483760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2015.2483760","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W1925757349"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100622102","display_name":"Zhili Zhang","orcid":"https://orcid.org/0000-0003-2393-7632","observed_orcids":["https://orcid.org/0000-0003-2393-7632"]},"institutions":[{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhili Zhang","raw_affiliation_strings":["University of Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044701017","display_name":"Kai Fu","orcid":"https://orcid.org/0000-0002-9405-7512","observed_orcids":["https://orcid.org/0000-0002-9405-7512"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Fu","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044608102","display_name":"Xuguang Deng","orcid":"https://orcid.org/0000-0002-8882-0999","observed_orcids":["https://orcid.org/0000-0002-8882-0999"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuguang Deng","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107482137","display_name":"Xiaodong Zhang","orcid":"https://orcid.org/0000-0003-4137-3535","observed_orcids":["https://orcid.org/0000-0003-4137-3535"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaodong Zhang","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113746547","display_name":"Yaming Fan","orcid":"https://orcid.org/0000-0002-1387-2946","observed_orcids":["https://orcid.org/0000-0002-1387-2946"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaming Fan","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100867361","display_name":"Shichuang Sun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]},{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shichuang Sun","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]},{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Liang Song","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Song","raw_affiliation_strings":["University of Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104217790","display_name":"Zheng Xing","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zheng Xing","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001389153","display_name":"Wei Kang Huang","orcid":"https://orcid.org/0000-0002-8284-2310","observed_orcids":["https://orcid.org/0000-0002-8284-2310"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wei Huang","raw_affiliation_strings":["Wuxi Jingkai Technology Company, Ltd., Wuxi, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wuxi Jingkai Technology Company, Ltd., Wuxi, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100725924","display_name":"Guohao Yu","orcid":"https://orcid.org/0000-0002-6921-2728","observed_orcids":["https://orcid.org/0000-0002-6921-2728"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guohao Yu","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006631523","display_name":"Yong Cai","orcid":"https://orcid.org/0000-0001-9849-0658","observed_orcids":["https://orcid.org/0000-0001-9849-0658"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yong Cai","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101633543","display_name":"Baoshun Zhang","orcid":"https://orcid.org/0000-0002-4628-8236","observed_orcids":["https://orcid.org/0000-0002-4628-8236","https://orcid.org/0000-0002-7289-2883"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Baoshun Zhang","raw_affiliation_strings":["Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.1176,"has_fulltext":false,"cited_by_count":52,"citation_normalized_percentile":{"value":0.87780892,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"36","issue":"11","first_page":"1128","last_page":"1131"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.8939999938011169},{"id":"https://openalex.org/keywords/mis-hemt","display_name":"MIS-HEMT","score":0.8410000205039978},{"id":"https://openalex.org/keywords/enhancement-mode-transistors","display_name":"enhancement-mode transistors","score":0.8109999895095825},{"id":"https://openalex.org/keywords/fluorine-ion-implantation","display_name":"fluorine implantation","score":0.8799999952316284},{"id":"https://openalex.org/keywords/silicon-nitride-gate-dielectric","display_name":"silicon nitride gate dielectric","score":0.8700000047683716},{"id":"https://openalex.org/keywords/low-pressure-chemical-vapor-deposition","display_name":"low-pressure chemical vapor deposition","score":0.9679999947547913},{"id":"https://openalex.org/keywords/ion-implantation-damage","display_name":"ion implantation damage","score":0.675000011920929},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.890999972820282},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.8970000147819519},{"id":"https://openalex.org/keywords/off-state-resistance","display_name":"off-state resistance","score":0.7059999704360962}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7797571420669556},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5904810428619385},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5703325271606445},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5603137612342834},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.458514928817749},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.454505980014801},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4191089868545532},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2952086925506592},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.29450103640556335},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25827062129974365},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2322894036769867},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18884319067001343},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07391834259033203},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/led.2015.2483760","doi":"https://doi.org/10.1109/led.2015.2483760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2015.2483760","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"pmh:oai:ir.sinano.ac.cn:332007/3280","doi":null,"is_oa":false,"landing_page_url":"http://ir.sinano.ac.cn/handle/332007/3280","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"\u671f\u520a\u8bba\u6587"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1965578710","https://openalex.org/W2005037605","https://openalex.org/W2022952521","https://openalex.org/W2029354491","https://openalex.org/W2033464198","https://openalex.org/W2058483437","https://openalex.org/W2075997516","https://openalex.org/W2113104595","https://openalex.org/W2120465859","https://openalex.org/W2131233020","https://openalex.org/W2147181763","https://openalex.org/W2147521755","https://openalex.org/W2159764454","https://openalex.org/W2169301346"],"related_works":["https://openalex.org/W2131233020","https://openalex.org/W2185863115","https://openalex.org/W2032728949","https://openalex.org/W2058483437","https://openalex.org/W2465561787","https://openalex.org/W4256555762","https://openalex.org/W2019049608","https://openalex.org/W2069052309","https://openalex.org/W1964662928","https://openalex.org/W2296563903"],"abstract_inverted_index":{"This":[0],"letter":[1],"presents":[2],"a":[3,62,71,84],"fabrication":[4],"technology":[5],"of":[6,89,107],"enhancement-mode":[7],"(E-mode)":[8],"AlGaN/GaN":[9],"metal-insulator-":[10],"semiconductor":[11],"high-electron":[12],"mobility":[13],"transistors":[14],"(MIS-HEMTs)":[15],"using":[16],"10":[17],"keV":[18],"fluorine":[19,51],"ion":[20],"implantation.":[21],"An":[22],"8":[23],"nm":[24],"low-pressure":[25],"chemical":[26],"vapor":[27],"deposition":[28],"silicon":[29],"nitride":[30],"layer":[31,42],"was":[32],"deposited":[33],"on":[34],"the":[35,46,55,92,102],"AlGaN":[36],"as":[37,65,67],"gate":[38],"dielectric":[39],"and":[40,83],"energy-absorbing":[41],"that":[43],"slows":[44],"down":[45],"high":[47,66,85],"energy":[48],"(10":[49],"keV)":[50],"ions":[52],"to":[53],"reduce":[54],"implantation":[56],"damage.":[57],"The":[58],"E-mode":[59,93],"MIS-HEMTs":[60],"exhibit":[61],"threshold":[63],"voltage":[64],"+3.3":[68],"V":[69],"with":[70],"maximum":[72],"drain":[73],"current":[74,87],"over":[75],"200":[76],"mA/mm":[77,79],"(250":[78],"for":[80],"depletion-mode":[81],"MIS-HEMTs)":[82],"on/off":[86],"ratio":[88],"109.":[90],"Meanwhile,":[91],"MIS-HEMT":[94],"dynamic":[95],"RONis":[96],"only":[97],"1.53":[98],"times":[99],"larger":[100],"than":[101],"static":[103],"RONafter":[104],"off-state":[105],"VDSstress":[106],"500":[108],"V.":[109]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}