{"id":"https://openalex.org/W1925452205","doi":"https://doi.org/10.1002/sia.4969","title":"Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal\u2010oxide\u2010semiconductor devices","display_name":"Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal\u2010oxide\u2010semiconductor devices","publication_year":2012,"publication_date":"2012-04-12","ids":{"openalex":"https://openalex.org/W1925452205","doi":"https://doi.org/10.1002/sia.4969","mag":"1925452205"},"language":"en","primary_location":{"id":"doi:10.1002/sia.4969","doi":"https://doi.org/10.1002/sia.4969","is_oa":false,"landing_page_url":"https://doi.org/10.1002/sia.4969","pdf_url":null,"source":{"id":"https://openalex.org/S114406758","display_name":"Surface and Interface Analysis","issn_l":"0142-2421","issn":["0142-2421","1096-9918"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-3","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Interface Analysis","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079402887","display_name":"S. V. Jagadeesh Chandra","orcid":"https://orcid.org/0000-0001-6418-9066","observed_orcids":["https://orcid.org/0000-0001-6418-9066"]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. V. Jagadeesh Chandra","raw_affiliation_strings":["School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083399924","display_name":"Woong\u2010Ki Hong","orcid":"https://orcid.org/0000-0001-8221-1028","observed_orcids":["https://orcid.org/0000-0001-8221-1028"]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woong\u2010Ki Hong","raw_affiliation_strings":["School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100676204","display_name":"Jin\u2010Sung Kim","orcid":"https://orcid.org/0000-0002-5989-8391","observed_orcids":["https://orcid.org/0000-0002-5989-8391"]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin\u2010Sung Kim","raw_affiliation_strings":["Department of BIN Fusion Technology, Chonbuk National University, Jeonju, 561-756 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of BIN Fusion Technology, Chonbuk National University, Jeonju, 561-756 Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109105429","display_name":"Hyobong Hong","orcid":"https://orcid.org/0000-0002-0738-3636","observed_orcids":["https://orcid.org/0000-0002-0738-3636"]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyobong Hong","raw_affiliation_strings":["IT Convergence Service Core Research Team, Electronics and Telecommunications Research Institute, Daejeon, 305-700 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IT Convergence Service Core Research Team, Electronics and Telecommunications Research Institute, Daejeon, 305-700 Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011377630","display_name":"Chel\u2010Jong Choi","orcid":"https://orcid.org/0000-0002-9123-670X","observed_orcids":["https://orcid.org/0000-0002-9123-670X"]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chel\u2010Jong Choi","raw_affiliation_strings":["Department of BIN Fusion Technology, Chonbuk National University, Jeonju, 561-756 Korea","School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of BIN Fusion Technology, Chonbuk National University, Jeonju, 561-756 Korea","institution_ids":["https://openalex.org/I80611190"]},{"raw_affiliation_string":"School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 561-756 Korea","institution_ids":["https://openalex.org/I80611190"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5011377630"],"corresponding_institution_ids":["https://openalex.org/I80611190"],"apc_list":{"value":3580,"currency":"USD","value_usd":3580},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"44","issue":"11-12","first_page":"1436","last_page":"1439"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9839000105857849,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9839000105857849,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.01140000019222498,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/germanium-mosfets","display_name":"germanium MOSFETs","score":0.7139999866485596},{"id":"https://openalex.org/keywords/effective-work-function","display_name":"effective work function","score":0.8669999837875366},{"id":"https://openalex.org/keywords/fermi-level-pinning","display_name":"Fermi level pinning","score":0.9890000224113464},{"id":"https://openalex.org/keywords/post-metallization-annealing","display_name":"post-metallization annealing","score":0.8169999718666077},{"id":"https://openalex.org/keywords/forming-gas-annealing","display_name":"forming gas annealing","score":0.9589999914169312},{"id":"https://openalex.org/keywords/oxygen-annealing","display_name":"oxygen annealing","score":0.9440000057220459},{"id":"https://openalex.org/keywords/hfo2-gate-dielectric","display_name":"HfO2 gate dielectric","score":0.8600000143051147},{"id":"https://openalex.org/keywords/interstitial-hydrogen","display_name":"interstitial hydrogen","score":0.8809999823570251},{"id":"https://openalex.org/keywords/interface-dipole","display_name":"interface dipole","score":0.5699999928474426},{"id":"https://openalex.org/keywords/metal-semiconductor-interface","display_name":"metal-semiconductor interface","score":0.5270000100135803}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7714247107505798},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.7492029666900635},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.6115500926971436},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6113885641098022},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.5445369482040405},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5017383098602295},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5002985000610352},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4853721857070923},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.47042274475097656},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45675477385520935},{"id":"https://openalex.org/C40636707","wikidata":"https://www.wikidata.org/wiki/Q13633683","display_name":"Fermi level","level":3,"score":0.45531779527664185},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.44106703996658325},{"id":"https://openalex.org/C36003996","wikidata":"https://www.wikidata.org/wiki/Q664848","display_name":"Forming gas","level":3,"score":0.4265049397945404},{"id":"https://openalex.org/C518104683","wikidata":"https://www.wikidata.org/wiki/Q880","display_name":"Platinum","level":3,"score":0.41236862540245056},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.40801069140434265},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.40187761187553406},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3632938861846924},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2881348729133606},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.18803799152374268},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17040321230888367},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13560935854911804},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0991850197315216},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.07257819175720215},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/sia.4969","doi":"https://doi.org/10.1002/sia.4969","is_oa":false,"landing_page_url":"https://doi.org/10.1002/sia.4969","pdf_url":null,"source":{"id":"https://openalex.org/S114406758","display_name":"Surface and Interface Analysis","issn_l":"0142-2421","issn":["0142-2421","1096-9918"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-3","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Interface Analysis","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W189150024","https://openalex.org/W1524924195","https://openalex.org/W1565210720","https://openalex.org/W1652166905","https://openalex.org/W1673093797","https://openalex.org/W1967753446","https://openalex.org/W1973221791","https://openalex.org/W1975484091","https://openalex.org/W2003499467","https://openalex.org/W2009382203","https://openalex.org/W2029944930","https://openalex.org/W2037587145","https://openalex.org/W2073855249","https://openalex.org/W2077357007","https://openalex.org/W2084453985","https://openalex.org/W2095928799"],"related_works":["https://openalex.org/W2019173230","https://openalex.org/W2009382203","https://openalex.org/W1881372851","https://openalex.org/W2073855249","https://openalex.org/W1926626317","https://openalex.org/W2115335285","https://openalex.org/W2469714872","https://openalex.org/W2102706597","https://openalex.org/W2347163626","https://openalex.org/W1523304438"],"abstract_inverted_index":{"The":[0,47,95],"inherent":[1],"contributions":[2],"of":[3,22,42,50,77,117,128],"Fermi":[4,114],"level":[5,115],"pinning":[6,116],"in":[7,25,73,133],"Ge":[8],"metal\u2010oxide\u2010semiconductor":[9],"devices":[10,57],"with":[11,99,112],"Pt/HfO":[12],"2":[13],"gate":[14,45,53,80,131],"stacks":[15],"were":[16],"investigated":[17],"by":[18,103],"examining":[19],"the":[20,33,43,51,65,71,74,78,104,113,124,129],"impact":[21],"thermal":[23],"treatment":[24],"forming":[26],"gas":[27],"(FG)":[28],"and":[29],"oxygen":[30,92],"environments":[31],"on":[32],"effective":[34],"metal":[35],"work":[36],"function":[37],"(":[38],"\u03a6":[39,48,75,126],"m,eff":[40,49,76,127],")":[41],"Pt":[44,52,79,130],"electrode.":[46],"electrode":[54,81,132],"for":[55,123],"as\u2010deposited":[56],"was":[58,89],"extracted":[59],"to":[60,70,83],"be":[61,121],"~4.1":[62],"eV.":[63],"However,":[64],"FG":[66,105],"annealing":[67,93,106],"process":[68],"led":[69],"increase":[72],"up":[82],"~4.5":[84],"eV,":[85],"whereas":[86],"no":[87],"variation":[88],"noticed":[90],"after":[91],"process.":[94],"interstitial":[96],"hydrogen":[97],"atoms":[98],"negative":[100],"charge":[101],"introduced":[102],"compensate":[107],"positively":[108],"charged":[109],"dipoles":[110],"associated":[111],"Ge.":[118],"This":[119],"could":[120],"responsible":[122],"increased":[125],"FG\u2010annealed":[134],"devices.":[135],"Copyright":[136],"\u00a9":[137],"2012":[138],"John":[139],"Wiley":[140],"&":[141],"Sons,":[142],"Ltd.":[143]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}