{"id":"https://openalex.org/W190907690","doi":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","title":"Recent Applications of X-Ray Topography to the Study of III-V Semiconductors","display_name":"Recent Applications of X-Ray Topography to the Study of III-V Semiconductors","publication_year":1994,"publication_date":"1994-01-01","ids":{"openalex":"https://openalex.org/W190907690","doi":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","mag":"190907690"},"language":"en","primary_location":{"id":"doi:10.1016/b978-0-444-81889-8.50022-5","doi":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","pdf_url":null,"source":{"id":"https://openalex.org/S4306463230","display_name":"Elsevier eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Control of Semiconductor Interfaces","raw_type":"book-chapter"},"volume":{"id":"https://openalex.org/W4242607485","display_name":"Control of Semiconductor Interfaces"},"type":"book-chapter","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055463602","display_name":"Isabella C. Bassignana","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I176714629","display_name":"Bell (Canada)","ror":"https://ror.org/00xdg8m59","country_code":"CA","type":"company","lineage":["https://openalex.org/I176714629"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"I.C. Bassignana","raw_affiliation_strings":["Advanced Technology Laboratory, Bell-Northern Research Ltd., P.O. BOX 3511 STN. \u2018C\u2019, Ottawa, Canada. K1Y-4H7"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory, Bell-Northern Research Ltd., P.O. BOX 3511 STN. \u2018C\u2019, Ottawa, Canada. K1Y-4H7","institution_ids":["https://openalex.org/I176714629"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080220054","display_name":"D.A. Macquistan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I176714629","display_name":"Bell (Canada)","ror":"https://ror.org/00xdg8m59","country_code":"CA","type":"company","lineage":["https://openalex.org/I176714629"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"D.A. Macquistan","raw_affiliation_strings":["Advanced Technology Laboratory, Bell-Northern Research Ltd., P.O. BOX 3511 STN. \u2018C\u2019, Ottawa, Canada. K1Y-4H7"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory, Bell-Northern Research Ltd., P.O. BOX 3511 STN. \u2018C\u2019, Ottawa, Canada. K1Y-4H7","institution_ids":["https://openalex.org/I176714629"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I176714629"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.23853924,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"103","last_page":"108"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12613","display_name":"X-ray Diffraction in Crystallography","score":0.5737000107765198,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12613","display_name":"X-ray Diffraction in Crystallography","score":0.5737000107765198,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.24770000576972961,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12762","display_name":"Crystallography and Radiation Phenomena","score":0.01720000058412552,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/iii-v-semiconductors","display_name":"III-V semiconductors","score":0.9850000143051147},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.703000009059906},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":1.0},{"id":"https://openalex.org/keywords/crystal-defects","display_name":"crystal defects","score":0.9309999942779541},{"id":"https://openalex.org/keywords/low-angle-grain-boundaries","display_name":"low-angle grain boundaries","score":0.7549999952316284},{"id":"https://openalex.org/keywords/dislocation-cell-structure","display_name":"dislocation cell structure","score":0.8799999952316284},{"id":"https://openalex.org/keywords/slip","display_name":"slip","score":0.7710000276565552},{"id":"https://openalex.org/keywords/inclusion","display_name":"inclusion","score":0.7160000205039978},{"id":"https://openalex.org/keywords/precipitate","display_name":"precipitates","score":0.9509999752044678},{"id":"https://openalex.org/keywords/mosaic-structure","display_name":"mosaic structure","score":0.9169999957084656},{"id":"https://openalex.org/keywords/epitaxial-layers","display_name":"epitaxial layers","score":0.824999988079071},{"id":"https://openalex.org/keywords/crystalline-perfection","display_name":"crystal perfection","score":0.859000027179718}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.8375991582870483},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7415939569473267},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6611131429672241},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.6416258811950684},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5468133091926575},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5005762577056885},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.49861836433410645},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49811768531799316},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.47760364413261414},{"id":"https://openalex.org/C195268267","wikidata":"https://www.wikidata.org/wiki/Q1928883","display_name":"Slip (aerodynamics)","level":2,"score":0.4599025249481201},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25946301221847534},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21518707275390625},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13194814324378967},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.08635324239730835},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05509406328201294},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.05163389444351196},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/b978-0-444-81889-8.50022-5","doi":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/b978-0-444-81889-8.50022-5","pdf_url":null,"source":{"id":"https://openalex.org/S4306463230","display_name":"Elsevier eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Control of Semiconductor Interfaces","raw_type":"book-chapter"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1967430610","https://openalex.org/W1967465510","https://openalex.org/W1971139453","https://openalex.org/W1977845147","https://openalex.org/W1978640787","https://openalex.org/W1981256232","https://openalex.org/W1999189675","https://openalex.org/W2043568873","https://openalex.org/W2059817676","https://openalex.org/W2077302624","https://openalex.org/W2499583154","https://openalex.org/W4237904496"],"related_works":["https://openalex.org/W2145967394","https://openalex.org/W2120609154","https://openalex.org/W1978127512","https://openalex.org/W2499583154","https://openalex.org/W3161825564","https://openalex.org/W2063273599","https://openalex.org/W2025963503","https://openalex.org/W1997529420","https://openalex.org/W1999252494","https://openalex.org/W21654506"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-10T09:11:00.788812","created_date":"2016-06-24T00:00:00"}