{"id":"https://openalex.org/W1892466326","doi":"https://doi.org/10.1016/s0040-6090(98)01248-6","title":"Selectively grown vertical Si MOS transistor with reduced overlap capacitances","display_name":"Selectively grown vertical Si MOS transistor with reduced overlap capacitances","publication_year":1998,"publication_date":"1998-12-01","ids":{"openalex":"https://openalex.org/W1892466326","doi":"https://doi.org/10.1016/s0040-6090(98)01248-6","mag":"1892466326"},"language":"en","primary_location":{"id":"doi:10.1016/s0040-6090(98)01248-6","doi":"https://doi.org/10.1016/s0040-6090(98)01248-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0040-6090(98)01248-6","pdf_url":null,"source":{"id":"https://openalex.org/S84339699","display_name":"Thin Solid Films","issn_l":"0040-6090","issn":["0040-6090","1879-2731"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thin Solid Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://orbilu.uni.lu/handle/10993/20659","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019018008","display_name":"D Klaes","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"D Klaes","raw_affiliation_strings":["Forschungszentrum J\u00a8ulich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Forschungszentrum J\u00a8ulich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113893502","display_name":"J\u00fcrgen Moers","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J Moers","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080045346","display_name":"A. T\u00f6nnesmann","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A T\u00f6nnesmann","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084108689","display_name":"S. Wickenh\u00e4user","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S Wickenh\u00e4user","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057988829","display_name":"Lili Vescan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"L Vescan","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067792259","display_name":"M. Marso","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M Marso","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110096783","display_name":"Th. Grabolla","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T Grabolla","raw_affiliation_strings":["Institute for Semiconductor Physics, Walter-Korsing-Strasse 2, 15230 Frankfurt Oder, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Physics, Walter-Korsing-Strasse 2, 15230 Frankfurt Oder, Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":null,"display_name":"M Grimm","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M Grimm","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084136571","display_name":"Hans Luth","orcid":"https://orcid.org/0000-0003-1617-3355","observed_orcids":["https://orcid.org/0000-0003-1617-3355"]},"institutions":[{"id":"https://openalex.org/I171892758","display_name":"Forschungszentrum J\u00fclich","ror":"https://ror.org/02nv7yv05","country_code":"DE","type":"facility","lineage":["https://openalex.org/I1305996414","https://openalex.org/I171892758"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H L\u00fcth","raw_affiliation_strings":["Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Thin Film and Ion Technology (ISI), Research Centre J\u00fclich, D-52425 J\u00fclich, Germany","institution_ids":["https://openalex.org/I171892758"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3120,"currency":"USD","value_usd":3120},"apc_paid":null,"fwci":1.8922,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.82939248,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"336","issue":"1-2","first_page":"306","last_page":"308"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9520999789237976,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9520999789237976,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.045899998396635056,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vertical-mosfet","display_name":"vertical MOSFET","score":0.9010000228881836},{"id":"https://openalex.org/keywords/selective-epitaxial-growth","display_name":"selective epitaxial growth","score":0.8820000290870667},{"id":"https://openalex.org/keywords/p-channel-mosfet","display_name":"p-channel MOSFET","score":0.8429999947547913},{"id":"https://openalex.org/keywords/short-channel-length","display_name":"short channel length","score":0.7910000085830688},{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.746999979019165},{"id":"https://openalex.org/keywords/punch-through","display_name":"punch-through","score":0.8109999895095825},{"id":"https://openalex.org/keywords/facet-growth","display_name":"facet growth","score":0.8659999966621399},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8399999737739563},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.9179999828338623},{"id":"https://openalex.org/keywords/high-speed-transistors","display_name":"high-speed transistors","score":0.6380000114440918}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6281686425209045},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5443429946899414},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5158290266990662},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3600162863731384},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2281491458415985},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14430800080299377},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1016/s0040-6090(98)01248-6","doi":"https://doi.org/10.1016/s0040-6090(98)01248-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0040-6090(98)01248-6","pdf_url":null,"source":{"id":"https://openalex.org/S84339699","display_name":"Thin Solid Films","issn_l":"0040-6090","issn":["0040-6090","1879-2731"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Thin Solid Films","raw_type":"journal-article"},{"id":"pmh:oai:juser.fz-juelich.de:36045","doi":null,"is_oa":false,"landing_page_url":"http://juser.fz-juelich.de/search?p=id:%22PreJuSER-36045%22","pdf_url":null,"source":{"id":"https://openalex.org/S4306401090","display_name":"JuSER (Forschungszentrum J\u00fclich)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I171892758","host_organization_name":"Forschungszentrum J\u00fclich","host_organization_lineage":["https://openalex.org/I171892758"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Thin solid films 336, 306 - 308 (1998).","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:juser.fz-juelich.de:36051","doi":null,"is_oa":false,"landing_page_url":"http://juser.fz-juelich.de/record/36051","pdf_url":null,"source":{"id":"https://openalex.org/S4306401090","display_name":"JuSER (Forschungszentrum J\u00fclich)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I171892758","host_organization_name":"Forschungszentrum J\u00fclich","host_organization_lineage":["https://openalex.org/I171892758"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Thin films epitaxial growth and nanostructures : EMRS Spring Conference","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:orbilu.uni.lu:10993/20659","doi":null,"is_oa":true,"landing_page_url":"https://orbilu.uni.lu/handle/10993/20659","pdf_url":null,"source":{"id":"https://openalex.org/S4306401815","display_name":"Open Repository and Bibliography (University of Luxembourg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I186903577","host_organization_name":"University of Luxembourg","host_organization_lineage":["https://openalex.org/I186903577"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-sa","license_id":"https://openalex.org/licenses/cc-by-nc-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Thin Solid Films, 336 (1998), 306-308 (1998)","raw_type":"http://purl.org/coar/resource_type/c_6501"}],"best_oa_location":{"id":"pmh:oai:orbilu.uni.lu:10993/20659","doi":null,"is_oa":true,"landing_page_url":"https://orbilu.uni.lu/handle/10993/20659","pdf_url":null,"source":{"id":"https://openalex.org/S4306401815","display_name":"Open Repository and Bibliography (University of Luxembourg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I186903577","host_organization_name":"University of Luxembourg","host_organization_lineage":["https://openalex.org/I186903577"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-sa","license_id":"https://openalex.org/licenses/cc-by-nc-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Thin Solid Films, 336 (1998), 306-308 (1998)","raw_type":"http://purl.org/coar/resource_type/c_6501"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W163494670","https://openalex.org/W582262005","https://openalex.org/W1808015741","https://openalex.org/W1978144929","https://openalex.org/W2046369121","https://openalex.org/W2049405627","https://openalex.org/W2075162522"],"related_works":["https://openalex.org/W3148892720","https://openalex.org/W1830053969","https://openalex.org/W4386489789","https://openalex.org/W2462900558","https://openalex.org/W4249015268","https://openalex.org/W1538678932","https://openalex.org/W7117162571","https://openalex.org/W2998111978","https://openalex.org/W2085730272","https://openalex.org/W2472128090"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2016-06-24T00:00:00"}