{"id":"https://openalex.org/W1786687397","doi":"https://doi.org/10.1016/j.mssp.2015.08.033","title":"Chlorine based focused electron beam induced etching: A novel way to pattern germanium","display_name":"Chlorine based focused electron beam induced etching: A novel way to pattern germanium","publication_year":2015,"publication_date":"2015-09-27","ids":{"openalex":"https://openalex.org/W1786687397","doi":"https://doi.org/10.1016/j.mssp.2015.08.033","mag":"1786687397"},"language":"en","primary_location":{"id":"doi:10.1016/j.mssp.2015.08.033","doi":"https://doi.org/10.1016/j.mssp.2015.08.033","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mssp.2015.08.033","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1369800115301633/pdf","source":{"id":"https://openalex.org/S82126420","display_name":"Materials Science in Semiconductor Processing","issn_l":"1369-8001","issn":["1369-8001","1873-4081"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science in Semiconductor Processing","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://www.sciencedirect.com/science/article/pii/S1369800115301633/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047608447","display_name":"Mostafa M. Shawrav","orcid":"https://orcid.org/0000-0001-8639-0393","observed_orcids":["https://orcid.org/0000-0001-8639-0393"]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"M.M. Shawrav","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042908729","display_name":"Zeynep Gokce Gokdeniz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Z.G. G\u00f6kdeniz","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057456011","display_name":"Heinz D. Wanzenboeck","orcid":"https://orcid.org/0000-0002-0893-273X","observed_orcids":["https://orcid.org/0000-0002-0893-273X"]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":true,"raw_author_name":"H.D. Wanzenboeck","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086206066","display_name":"Philipp Taus","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"P. Taus","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065499356","display_name":"Johann K. Mika","orcid":"https://orcid.org/0000-0002-9219-9955","observed_orcids":["https://orcid.org/0000-0002-9219-9955"]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"J.K. Mika","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053433014","display_name":"Simon Waid","orcid":"https://orcid.org/0000-0003-3263-9856","observed_orcids":["https://orcid.org/0000-0003-3263-9856"]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"S. Waid","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079352676","display_name":"E. Bertagnolli","orcid":"https://orcid.org/0000-0003-4246-6637","observed_orcids":["https://orcid.org/0000-0003-4246-6637"]},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"E. Bertagnolli","raw_affiliation_strings":["Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7/1, E 362, 1040 Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5057456011"],"corresponding_institution_ids":["https://openalex.org/I145847075"],"apc_list":{"value":3540,"currency":"USD","value_usd":3540},"apc_paid":{"value":3540,"currency":"USD","value_usd":3540},"fwci":0.4196,"has_fulltext":true,"cited_by_count":10,"citation_normalized_percentile":{"value":0.63288098,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"42","issue":null,"first_page":"170","last_page":"173"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.7480000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.7480000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12224","display_name":"Nanofabrication and Lithography Techniques","score":0.1525000035762787,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.023099999874830246,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/chlorine-etching","display_name":"chlorine etching","score":0.7009999752044678},{"id":"https://openalex.org/keywords/germanium","display_name":"germanium","score":0.7730000019073486},{"id":"https://openalex.org/keywords/nanowire-patterning","display_name":"nanowire patterning","score":0.734000027179718},{"id":"https://openalex.org/keywords/photolithography","display_name":"photolithography","score":0.46000000834465027},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.6039999723434448},{"id":"https://openalex.org/keywords/surface-topography","display_name":"surface topography","score":0.6850000023841858}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8277006149291992},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8195792436599731},{"id":"https://openalex.org/C162117346","wikidata":"https://www.wikidata.org/wiki/Q1106386","display_name":"Nanolithography","level":4,"score":0.6428054571151733},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.6252865791320801},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.568881094455719},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.5551314353942871},{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.5442233085632324},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5418340563774109},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5225367546081543},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5068843960762024},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.43966370820999146},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.42514997720718384},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.4240337014198303},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4000336527824402},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.32965531945228577},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.29680752754211426},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mssp.2015.08.033","doi":"https://doi.org/10.1016/j.mssp.2015.08.033","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mssp.2015.08.033","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1369800115301633/pdf","source":{"id":"https://openalex.org/S82126420","display_name":"Materials Science in Semiconductor Processing","issn_l":"1369-8001","issn":["1369-8001","1873-4081"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science in Semiconductor Processing","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1016/j.mssp.2015.08.033","doi":"https://doi.org/10.1016/j.mssp.2015.08.033","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mssp.2015.08.033","pdf_url":"https://www.sciencedirect.com/science/article/pii/S1369800115301633/pdf","source":{"id":"https://openalex.org/S82126420","display_name":"Materials Science in Semiconductor Processing","issn_l":"1369-8001","issn":["1369-8001","1873-4081"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science in Semiconductor Processing","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G4302492922","display_name":"CRYSPE2-Crystal structure Preserving Electron - Beam Etching for Ge-Nanodevices","funder_award_id":"P24093","funder_id":"https://openalex.org/F4320321181","funder_display_name":"Austrian Science Fund"}],"funders":[{"id":"https://openalex.org/F4320321181","display_name":"Austrian Science Fund","ror":"https://ror.org/013tf3c58"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1786687397.pdf","grobid_xml":"https://content.openalex.org/works/W1786687397.grobid-xml"},"referenced_works_count":22,"referenced_works":["https://openalex.org/W1597866868","https://openalex.org/W1978869694","https://openalex.org/W1995311816","https://openalex.org/W2001866060","https://openalex.org/W2017537485","https://openalex.org/W2025260014","https://openalex.org/W2031197424","https://openalex.org/W2033672524","https://openalex.org/W2036865567","https://openalex.org/W2038068076","https://openalex.org/W2043708225","https://openalex.org/W2046045425","https://openalex.org/W2048153402","https://openalex.org/W2052138988","https://openalex.org/W2056642032","https://openalex.org/W2068535017","https://openalex.org/W2087254718","https://openalex.org/W2089949096","https://openalex.org/W2091590457","https://openalex.org/W2128726303","https://openalex.org/W2135312502","https://openalex.org/W2163393377"],"related_works":["https://openalex.org/W2092540739","https://openalex.org/W2088454682","https://openalex.org/W2025955324","https://openalex.org/W2914566689","https://openalex.org/W2558121112","https://openalex.org/W2791115091","https://openalex.org/W4412097746","https://openalex.org/W1997317613","https://openalex.org/W2039643974","https://openalex.org/W1580767703"],"abstract_inverted_index":{"Focused":[0],"electron":[1,85],"beam":[2],"induced":[3],"etching":[4,9,106],"(FEBIE)":[5],"with":[6],"chlorine":[7,62],"as":[8,42,65],"agent":[10],"has":[11],"been":[12],"used":[13,64],"to":[14,18,48,69,89],"geometrically":[15],"shape":[16],"and":[17,97,103,112,129],"electrically":[19],"modify":[20],"semiconductor":[21,52],"nanodevices.":[22,135],"Selected":[23],"sections":[24],"of":[25,55,93,99,123,132],"monocrystalline":[26],"nanowires":[27],"were":[28],"modified":[29],"directly":[30],"without":[31],"the":[32,66,91,105,121],"requirement":[33],"for":[34,126],"a":[35,38,43,82],"photomask":[36],"or":[37,57],"resist":[39],"layer.":[40],"FEBIE":[41,125],"subtractive":[44],"nanofabrication":[45],"technology":[46],"allows":[47],"locally":[49],"etch":[50],"active":[51],"devices":[53],"made":[54],"Si":[56],"Ge.":[58],"In":[59],"this":[60,94],"work,":[61],"is":[63,87],"etchant":[67],"gas":[68],"thin":[70],"germanium":[71],"channel":[72],"structures":[73,101],"fabricated":[74],"by":[75,110,113],"standard":[76],"photolithography.":[77],"For":[78],"effective":[79],"material":[80],"removal":[81],"sufficiently":[83],"high":[84],"influence":[86],"essential":[88],"avoid":[90],"pitfalls":[92],"method.":[95],"Topography":[96],"conductivity":[98],"FEBIE-modified":[100],"prior":[102],"after":[104],"process":[107],"was":[108],"studied":[109],"AFM":[111],"electrical":[114,130],"I\u2013V":[115],"characteristics.":[116],"The":[117],"presented":[118],"work":[119],"demonstrates":[120],"potential":[122],"Cl-based":[124],"device":[127],"prototyping":[128],"trimming":[131],"future":[133],"Ge-based":[134]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2026-11-11T12:16:26.678958","created_date":"2016-06-24T00:00:00"}