{"id":"https://openalex.org/W178196768","doi":null,"title":"INVESTIGATION OF CRUCIBLE MATERIALS IN GRADIENT FREEZE GALLIUM ARSENIDE CRYSTAL GROWTH","display_name":"INVESTIGATION OF CRUCIBLE MATERIALS IN GRADIENT FREEZE GALLIUM ARSENIDE CRYSTAL GROWTH","publication_year":1987,"publication_date":"1987-12-01","ids":{"openalex":"https://openalex.org/W178196768","mag":"178196768"},"language":"en","primary_location":{"id":"pmh:oai:escholarship.org/ark:/13030/qt872541wj","doi":null,"is_oa":true,"landing_page_url":"https://escholarship.org/uc/item/872541wj","pdf_url":"https://escholarship.org/uc/item/872541wj","source":{"id":"https://openalex.org/S4306400115","display_name":"eScholarship (California Digital Library)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801248553","host_organization_name":"California Digital Library","host_organization_lineage":["https://openalex.org/I2801248553"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"etd"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://escholarship.org/uc/item/872541wj","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015368904","display_name":"J. L. Hurd","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"J. L. Hurd","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5015368904"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5605000257492065,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5605000257492065,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.2476000040769577,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","score":0.08470000326633453,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.890999972820282},{"id":"https://openalex.org/keywords/crucible-materials","display_name":"crucible materials","score":0.9079999923706055},{"id":"https://openalex.org/keywords/silicon-doped-gaas","display_name":"silicon-doped GaAs","score":0.6650000214576721},{"id":"https://openalex.org/keywords/semi-insulating-gaas","display_name":"semi-insulating GaAs","score":0.9570000171661377},{"id":"https://openalex.org/keywords/impurity-compensation","display_name":"impurity compensation","score":0.9259999990463257},{"id":"https://openalex.org/keywords/residual-impurities","display_name":"residual impurities","score":0.6140000224113464},{"id":"https://openalex.org/keywords/carbon-content","display_name":"carbon content","score":0.6399999856948853},{"id":"https://openalex.org/keywords/el2-center","display_name":"EL2 center","score":0.6869999766349792}],"concepts":[{"id":"https://openalex.org/C120500152","wikidata":"https://www.wikidata.org/wiki/Q5189793","display_name":"Crucible (geodemography)","level":2,"score":0.8649923801422119},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.7535672187805176},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5429182052612305},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.5296269059181213},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.5234039425849915},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.4149835705757141},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.3757668733596802},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.308616578578949},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22086158394813538},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1849813461303711},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1441684067249298},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"pmh:oai:escholarship.org/ark:/13030/qt872541wj","doi":null,"is_oa":true,"landing_page_url":"https://escholarship.org/uc/item/872541wj","pdf_url":"https://escholarship.org/uc/item/872541wj","source":{"id":"https://openalex.org/S4306400115","display_name":"eScholarship (California Digital Library)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801248553","host_organization_name":"California Digital Library","host_organization_lineage":["https://openalex.org/I2801248553"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"etd"},{"id":"pmh:qt872541wj","doi":null,"is_oa":false,"landing_page_url":"http://www.escholarship.org/uc/item/872541wj","pdf_url":null,"source":{"id":"https://openalex.org/S4306400115","display_name":"eScholarship (California Digital Library)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801248553","host_organization_name":"California Digital Library","host_organization_lineage":["https://openalex.org/I2801248553"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Hurd, J.L.(1987). INVESTIGATION OF CRUCIBLE MATERIALS IN GRADIENT FREEZE GALLIUM ARSENIDE CRYSTAL GROWTH. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/872541wj","raw_type":"article"},{"id":"mag:178196768","doi":null,"is_oa":false,"landing_page_url":"https://escholarship.org/content/qt872541wj/qt872541wj.pdf?t=p0lmhs","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:escholarship.org/ark:/13030/qt872541wj","doi":null,"is_oa":true,"landing_page_url":"https://escholarship.org/uc/item/872541wj","pdf_url":"https://escholarship.org/uc/item/872541wj","source":{"id":"https://openalex.org/S4306400115","display_name":"eScholarship (California Digital Library)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801248553","host_organization_name":"California Digital Library","host_organization_lineage":["https://openalex.org/I2801248553"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"etd"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1398330795","display_name":null,"funder_award_id":"DE-AC03-?","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G1498294715","display_name":null,"funder_award_id":"DE AC03-76F00098","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G1643223109","display_name":null,"funder_award_id":"AC03-76SF00098","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G193590374","display_name":null,"funder_award_id":"DEAC03-76SF00098","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"},{"id":"https://openalex.org/G301008592","display_name":null,"funder_award_id":"DE-AC03-76SF-00098","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"},{"id":"https://openalex.org/G3444594369","display_name":null,"funder_award_id":"AC03-76SF00098","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"},{"id":"https://openalex.org/G3861291406","display_name":null,"funder_award_id":"DE-AC03-76F00098","funder_id":"https://openalex.org/F4320337480","funder_display_name":"Basic Energy Sciences"}],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320337480","display_name":"Basic Energy Sciences","ror":"https://ror.org/05mg91w61"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W178196768.pdf","grobid_xml":"https://content.openalex.org/works/W178196768.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2049408453","https://openalex.org/W2143490895","https://openalex.org/W2033232693","https://openalex.org/W1967871016","https://openalex.org/W2038549380","https://openalex.org/W1990465511","https://openalex.org/W893041964","https://openalex.org/W871307209","https://openalex.org/W2003744432","https://openalex.org/W1524200713"],"abstract_inverted_index":{"Undoped":[0],"synthesized":[1,58],"GaAs":[2,167],"and":[3,28,39,117,142,149,164],"crystals":[4,97],"grown":[5,112],"by":[6,13],"the":[7,68,78,101,108,166],"gradient":[8,95],"freeze":[9,96,110],"method":[10],"were":[11],"analyzed":[12],"room":[14],"temperature":[15],"Hall":[16],"effect":[17],"for":[18,26,36,42,52,87,139,155,165],"net":[19,104],"carrier":[20],"concentration,":[21,38],"secondary":[22],"ion":[23],"mass":[24],"spectroscopy":[25,35],"silicon":[27,53,91],"residual":[29,69,79],"impurity":[30,70],"concentrations,":[31],"localized":[32],"vibrational":[33],"mode":[34],"carbon":[37],"optical":[40],"absorption":[41],"neutral":[43],"EL2":[44],"concentration.Impurity":[45],"compensation":[46],"was":[47],"examined":[48],"to":[49,66,73,132],"determine":[50,67],"limits":[51],"concentration":[54,81,106],"in":[55,59,83,94,121,161],"semi-insulating":[56,84],"GaAs.Boules":[57],"a":[60],"variety":[61],"of":[62,103,128],"materials":[63],"are":[64,152],"used":[65],"concentrations":[71,76],"contributing":[72],"compensation.Shallow":[74],"donor":[75,105],"below":[77],"acceptor":[80],"resulted":[82],"electronic":[85],"properties":[86],"two":[88],"synthesis":[89],"boules.The":[90],"incorporation":[92],"rate":[93],"is":[98],"quantified":[99],"through":[100],"deviation":[102],"from":[107],"normal":[109],"distribution.Crystals":[111],"As":[113],"rich,":[114],"Ga":[115],"rich":[116],"near":[118],"stoichiometric":[119],"composition":[120],"Si0":[122],"2":[123],"crucibles":[124],"show":[125],"order-of-magnitude":[126],"differences":[127],"I":[129],"would":[130],"like":[131],"thank":[133],"my":[134],"advisor,":[135],"Professor":[136],"Eugene":[137],"Haller":[138],"his":[140],"support":[141],"encouragement":[143],"throughout":[144],"this":[145,162],"work.Dr.":[146],"Edith":[147],"Bourret":[148],"Joseph":[150],"Guitron":[151],"gratefully":[153],"acknowledged":[154],"their":[156],"helpful":[157],"discussions,":[158],"ongoing":[159],"interest":[160],"work":[163],"crystal":[168],"growth.":[169]},"counts_by_year":[],"updated_date":"2026-08-30T07:30:35.949966","created_date":"2016-06-24T00:00:00"}