{"id":"https://openalex.org/W1716351663","doi":"https://doi.org/10.1109/mwsym.2003.1212529","title":"Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process","display_name":"Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process","publication_year":2003,"publication_date":"2003-08-27","ids":{"openalex":"https://openalex.org/W1716351663","doi":"https://doi.org/10.1109/mwsym.2003.1212529","mag":"1716351663"},"language":"en","primary_location":{"id":"doi:10.1109/mwsym.2003.1212529","doi":"https://doi.org/10.1109/mwsym.2003.1212529","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwsym.2003.1212529","pdf_url":null,"source":{"id":"https://openalex.org/S4210185519","display_name":"IEEE MTT-S International Microwave Symposium digest","issn_l":"0149-645X","issn":["0149-645X","2576-7216"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE MTT-S International Microwave Symposium Digest, 2003","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113506741","display_name":"K.T. Chan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"K.T. Chan","raw_affiliation_strings":["Dept. of Electronics Eng., National Chiao Tung Univ., Hsinchu, Taiwan","Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics Eng., National Chiao Tung Univ., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074325217","display_name":"Albert Chin","orcid":"https://orcid.org/0000-0001-6790-2437","observed_orcids":["https://orcid.org/0000-0001-6790-2437"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"A. Chin","raw_affiliation_strings":["Dept. of Electronics Eng., National Chiao Tung Univ., Hsinchu, Taiwan","Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics Eng., National Chiao Tung Univ., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109214466","display_name":"S. P. McAlister","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210159778","display_name":"National Research Council Canada","ror":"https://ror.org/04mte1k06","country_code":"CA","type":"government","lineage":["https://openalex.org/I4210159778"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S.P. McAlister","raw_affiliation_strings":["National Research Council, Ottawa, Canada","National Research Council of Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research Council, Ottawa, Canada","institution_ids":["https://openalex.org/I4210159778"]},{"raw_affiliation_string":"National Research Council of Canada","institution_ids":["https://openalex.org/I4210159778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054923166","display_name":"Chi\u2010Yang Chang","orcid":"https://orcid.org/0000-0002-6936-5142","observed_orcids":["https://orcid.org/0000-0002-6936-5142"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C.Y. Chang","raw_affiliation_strings":["Dept. of Communication Eng., National Chiao Tung Univ., Hsinchu, Taiwan","Department of Electrical and Computer Engineering"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Communication Eng., National Chiao Tung Univ., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"C. Tseng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"C. Tseng","raw_affiliation_strings":["United Microelectronics Corp., Hsinchu, Taiwan","UNITED MICROELECTRONICS CORPORATION"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"UNITED MICROELECTRONICS CORPORATION","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113770951","display_name":"Victor Liang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"V. Liang","raw_affiliation_strings":["United Microelectronics Corp., Hsinchu, Taiwan","UNITED MICROELECTRONICS CORPORATION"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"UNITED MICROELECTRONICS CORPORATION","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017346714","display_name":"J.K. Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"J.K. Chen","raw_affiliation_strings":["United Microelectronics Corp., Hsinchu, Taiwan","UNITED MICROELECTRONICS CORPORATION"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"UNITED MICROELECTRONICS CORPORATION","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079942795","display_name":"S. C. Chien","orcid":"https://orcid.org/0000-0002-6549-5564","observed_orcids":["https://orcid.org/0000-0002-6549-5564"]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["TW","US"],"is_corresponding":false,"raw_author_name":"S.C. Chien","raw_affiliation_strings":["United Microelectronics Corp., Hsinchu, Taiwan","UNITED MICROELECTRONICS CORPORATION"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210161555"]},{"raw_affiliation_string":"UNITED MICROELECTRONICS CORPORATION","institution_ids":["https://openalex.org/I77566578"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090221997","display_name":"D.S. Duh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210140015","display_name":"Institute of Nuclear Energy Research","ror":"https://ror.org/052jx3443","country_code":"TW","type":"government","lineage":["https://openalex.org/I2802216821","https://openalex.org/I4210140015"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"D.S. Duh","raw_affiliation_strings":["Inst. of Nuclear Energy Research, Taoyuan, Taiwan","Institute of Nuclear Energy Research Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inst. of Nuclear Energy Research, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I4210140015"]},{"raw_affiliation_string":"Institute of Nuclear Energy Research Taiwan","institution_ids":["https://openalex.org/I4210140015"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030467912","display_name":"Wuu\u2010Jyh Lin","orcid":"https://orcid.org/0000-0003-0330-7537","observed_orcids":["https://orcid.org/0000-0003-0330-7537"]},"institutions":[{"id":"https://openalex.org/I4210140015","display_name":"Institute of Nuclear Energy Research","ror":"https://ror.org/052jx3443","country_code":"TW","type":"government","lineage":["https://openalex.org/I2802216821","https://openalex.org/I4210140015"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W.J. Lin","raw_affiliation_strings":["Inst. of Nuclear Energy Research, Taoyuan, Taiwan","Institute of Nuclear Energy Research Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inst. of Nuclear Energy Research, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I4210140015"]},{"raw_affiliation_string":"Institute of Nuclear Energy Research Taiwan","institution_ids":["https://openalex.org/I4210140015"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.9336,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.95785269,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"23","issue":null,"first_page":"963","last_page":"966"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.4255000054836273,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.4255000054836273,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.2896000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.06710000336170197,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/rf-transmission-lines","display_name":"RF transmission lines","score":0.7200000286102295},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.953000009059906},{"id":"https://openalex.org/keywords/proton-implantation","display_name":"proton implantation","score":0.8849999904632568},{"id":"https://openalex.org/keywords/power-losses","display_name":"power losses","score":0.6069999933242798},{"id":"https://openalex.org/keywords/noise","display_name":"noise","score":0.7459999918937683},{"id":"https://openalex.org/keywords/high-resistivity","display_name":"high resistivity","score":0.656000018119812},{"id":"https://openalex.org/keywords/low-loss-transmission-lines","display_name":"low-loss transmission lines","score":0.41600000858306885},{"id":"https://openalex.org/keywords/vlsi-integration","display_name":"VLSI integration","score":0.6859999895095825},{"id":"https://openalex.org/keywords/millimeter-wave","display_name":"millimeter wave","score":0.6200000047683716}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7474735975265503},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7231743335723877},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6175937056541443},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6001155376434326},{"id":"https://openalex.org/C140311924","wikidata":"https://www.wikidata.org/wiki/Q200928","display_name":"Electric power transmission","level":2,"score":0.5785435438156128},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46494168043136597},{"id":"https://openalex.org/C761482","wikidata":"https://www.wikidata.org/wiki/Q118093","display_name":"Transmission (telecommunications)","level":2,"score":0.4596732258796692},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.4504261910915375},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43106791377067566},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.42379847168922424},{"id":"https://openalex.org/C90327742","wikidata":"https://www.wikidata.org/wiki/Q947396","display_name":"Insertion loss","level":2,"score":0.41058918833732605},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.4090278446674347},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18784818053245544},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14867353439331055},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13769569993019104},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwsym.2003.1212529","doi":"https://doi.org/10.1109/mwsym.2003.1212529","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwsym.2003.1212529","pdf_url":null,"source":{"id":"https://openalex.org/S4210185519","display_name":"IEEE MTT-S International Microwave Symposium digest","issn_l":"0149-645X","issn":["0149-645X","2576-7216"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE MTT-S International Microwave Symposium Digest, 2003","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.7207000255584717}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1558813888","https://openalex.org/W1975473275","https://openalex.org/W2100453009","https://openalex.org/W2117826355","https://openalex.org/W2139975605","https://openalex.org/W2143041157","https://openalex.org/W2164699630","https://openalex.org/W2535209882"],"related_works":["https://openalex.org/W2128739150","https://openalex.org/W2143041157","https://openalex.org/W2070520022","https://openalex.org/W1945629823","https://openalex.org/W2100691575","https://openalex.org/W1558813888","https://openalex.org/W2546565204","https://openalex.org/W10896657","https://openalex.org/W2021405137","https://openalex.org/W2100453009"],"abstract_inverted_index":{"Very":[0],"low":[1],"power":[2,37],"loss":[3,38],"/spl":[4,78],"les/0.6":[5],"dB":[6,14,41,47],"at":[7,15,73],"110":[8],"GHz":[9,17],"and":[10,28,42,72],"noise":[11,44],"of":[12,39,45,77],"<0.25":[13],"18":[16],"have":[18],"been":[19],"measured":[20,49],"on":[21,25],"transmission":[22,70],"lines":[23,71],"fabricated":[24],"Si":[26],"substrates":[27],"implanted":[29],"with":[30],"protons.":[31],"In":[32],"contrast,":[33],"a":[34,74],"much":[35],"worse":[36],"5":[40],"higher":[43],"2.5":[46],"were":[48],"without":[50],"implantation.":[51],"This":[52],"large":[53],"improvement":[54],"arises":[55],"from":[56],"the":[57,69],"high":[58],"resistivity":[59],"by":[60],"proton":[61],"implantation,":[62],"which":[63],"was":[64],"also":[65],"done":[66],"after":[67],"forming":[68],"reduced":[75],"energy":[76],"sim/":[79],"4":[80],"MeV":[81],"for":[82],"easier":[83],"process":[84],"integration":[85],"into":[86],"current":[87],"VLSI":[88],"technology.":[89]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-06-24T00:00:00"}