{"id":"https://openalex.org/W1681340462","doi":"https://doi.org/10.1109/tnano.2012.2199514","title":"Simulation Study of Performance for a 20-nm Gate Length In$_{\\bf 0.53}$Ga$_{\\bf 0.47}$As Implant Free Quantum Well MOSFET","display_name":"Simulation Study of Performance for a 20-nm Gate Length In$_{\\bf 0.53}$Ga$_{\\bf 0.47}$As Implant Free Quantum Well MOSFET","publication_year":2012,"publication_date":"2012-07-01","ids":{"openalex":"https://openalex.org/W1681340462","doi":"https://doi.org/10.1109/tnano.2012.2199514","mag":"1681340462"},"language":"en","primary_location":{"id":"doi:10.1109/tnano.2012.2199514","doi":"https://doi.org/10.1109/tnano.2012.2199514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2012.2199514","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047562175","display_name":"B. Benbakhti","orcid":"https://orcid.org/0000-0001-7209-1333","observed_orcids":["https://orcid.org/0000-0001-7209-1333"]},"institutions":[{"id":"https://openalex.org/I63098007","display_name":"Liverpool John Moores University","ror":"https://ror.org/04zfme737","country_code":"GB","type":"education","lineage":["https://openalex.org/I63098007"]},{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Brahim Benbakhti","raw_affiliation_strings":["School of Engineering, Liverpool John Moores University, Liverpool, UK","School of Engineering, University of Glasgow, Glasgow, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Liverpool John Moores University, Liverpool, UK","institution_ids":["https://openalex.org/I63098007"]},{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, UK","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064300225","display_name":"A. Mart\u0131\u0301nez","orcid":"https://orcid.org/0000-0001-8131-7242","observed_orcids":["https://orcid.org/0000-0001-8131-7242"]},"institutions":[{"id":"https://openalex.org/I39586589","display_name":"Swansea University","ror":"https://ror.org/053fq8t95","country_code":"GB","type":"education","lineage":["https://openalex.org/I39586589"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Antonio Martinez","raw_affiliation_strings":["Electronics System Design Centre, College of Engineering, Swansea University, Swansea, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics System Design Centre, College of Engineering, Swansea University, Swansea, UK","institution_ids":["https://openalex.org/I39586589"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018013635","display_name":"K. K\u00e1lna","orcid":"https://orcid.org/0000-0002-6333-9189","observed_orcids":["https://orcid.org/0000-0002-6333-9189"]},"institutions":[{"id":"https://openalex.org/I39586589","display_name":"Swansea University","ror":"https://ror.org/053fq8t95","country_code":"GB","type":"education","lineage":["https://openalex.org/I39586589"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Karol Kalna","raw_affiliation_strings":["Electronics System Design Centre, College of Engineering, Swansea University, Swansea, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics System Design Centre, College of Engineering, Swansea University, Swansea, UK","institution_ids":["https://openalex.org/I39586589"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064166800","display_name":"Geert Hellings","orcid":"https://orcid.org/0000-0002-5376-2119","observed_orcids":["https://orcid.org/0000-0002-5376-2119"]},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Geert Hellings","raw_affiliation_strings":["Electrical Engineering Department, Integrated Systems Division, (ESAT-INSYS), K.U. Leuven, Leuven, Belgium","Inter University Micro Electronics Center, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Integrated Systems Division, (ESAT-INSYS), K.U. Leuven, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Inter University Micro Electronics Center, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075183384","display_name":"Geert Eneman","orcid":"https://orcid.org/0000-0002-5849-3384","observed_orcids":["https://orcid.org/0000-0002-5849-3384"]},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Geert Eneman","raw_affiliation_strings":["Electrical Engineering Department, Integrated Systems Division (ESAT-INSYS), K.U. Leuven, Leuven, Belgium","Inter University Micro Electronics Center, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Integrated Systems Division (ESAT-INSYS), K.U. Leuven, Leuven, Belgium","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Inter University Micro Electronics Center, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112439685","display_name":"Kristin De Meyer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Kristin De Meyer","raw_affiliation_strings":["Inter University Micro Electronics Center, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter University Micro Electronics Center, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017031520","display_name":"M. Meuris","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Marc Meuris","raw_affiliation_strings":["Inter University Micro Electronics Center, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter University Micro Electronics Center, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.6002,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.69996113,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"11","issue":"4","first_page":"808","last_page":"817"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/n-mosfet","display_name":"nMOSFET","score":0.8349999785423279},{"id":"https://openalex.org/keywords/20-nm-gate-length","display_name":"20 nm gate length","score":0.8069999814033508},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.6840000152587891},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"drain-induced barrier lowering","score":0.9049999713897705},{"id":"https://openalex.org/keywords/electrostatic-integrity","display_name":"electrostatic integrity","score":0.7639999985694885},{"id":"https://openalex.org/keywords/drive-current","display_name":"drive current","score":0.6309999823570251},{"id":"https://openalex.org/keywords/low-leakage","display_name":"low leakage","score":0.46700000762939453}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6354405283927917},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6117435097694397},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.542557954788208},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5378566980361938},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5056405067443848},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4955176115036011},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.4908178746700287},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45624417066574097},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.4502618908882141},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.4117233157157898},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36477357149124146},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34896379709243774},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3374881446361542},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2543347477912903},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.21222245693206787},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.17902174592018127},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15344828367233276},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14232057332992554},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09353813529014587},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tnano.2012.2199514","doi":"https://doi.org/10.1109/tnano.2012.2199514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2012.2199514","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1187797921","display_name":"Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors","funder_award_id":"EP/I010084/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G3063514801","display_name":"Quantum Simulations of Future Solid State Transistors","funder_award_id":"EP/I004084/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G4777603789","display_name":"Modelling of Carrier Transport in Ultra Thin Body Transistors","funder_award_id":"EP/D070236/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G5158058048","display_name":null,"funder_award_id":"EP/I004084/2","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W44102734","https://openalex.org/W633819887","https://openalex.org/W1553528435","https://openalex.org/W1972722473","https://openalex.org/W1977829328","https://openalex.org/W1997361975","https://openalex.org/W2001885877","https://openalex.org/W2002465589","https://openalex.org/W2022985780","https://openalex.org/W2026882619","https://openalex.org/W2028877399","https://openalex.org/W2039261462","https://openalex.org/W2043179028","https://openalex.org/W2043490920","https://openalex.org/W2043567236","https://openalex.org/W2048331646","https://openalex.org/W2062268202","https://openalex.org/W2063043974","https://openalex.org/W2069091916","https://openalex.org/W2073487777","https://openalex.org/W2081128694","https://openalex.org/W2093555530","https://openalex.org/W2099655824","https://openalex.org/W2105413294","https://openalex.org/W2105522236","https://openalex.org/W2107390405","https://openalex.org/W2108582116","https://openalex.org/W2124903527","https://openalex.org/W2130994017","https://openalex.org/W2138472351","https://openalex.org/W2149166552","https://openalex.org/W2160840734","https://openalex.org/W2162526738","https://openalex.org/W2168983666","https://openalex.org/W2170162236"],"related_works":["https://openalex.org/W2168983666","https://openalex.org/W4232680582","https://openalex.org/W2170162236","https://openalex.org/W2124447645","https://openalex.org/W7020053715","https://openalex.org/W605652876","https://openalex.org/W1964146186","https://openalex.org/W1985453614","https://openalex.org/W2021924732","https://openalex.org/W2054845592"],"abstract_inverted_index":{"An":[0],"nMOSFET":[1,56],"for":[2,103],"the":[3,35,53,81,86,104,109,112,115,122,140,145,150,153,158,166,174],"future":[4],"high":[5,25],"mobility":[6],"dual-channel":[7],"CMOS":[8],"based":[9],"on":[10,108,139],"anew":[11],"In0.53Ga0.47As":[12],"implant":[13],"free":[14],"quantum":[15],"well":[16],"architecture":[17],"is":[18,176],"optimized":[19],"to":[20,80,144,171,179],"achieve":[21],"low":[22],"leakage":[23],"and":[24,43,68,77,128],"on-current.":[26],"Various":[27],"aspects":[28],"of":[29,65,74,111,132,134,147,160],"its":[30],"performance":[31],"are":[32],"evaluated":[33],"using":[34],"ensemble":[36],"Monte":[37],"Carlo":[38],"technique,":[39],"calibrated":[40],"drift-diffusion":[41],"simulations,":[42],"non-equilibrium":[44],"Green's":[45],"functions":[46],"technique.":[47],"The":[48],"numerical":[49],"investigations":[50],"demonstrate":[51],"that":[52],"implant-free":[54],"quantum-well":[55],"has":[57],"a":[58,69,94,100,129,161],"better":[59],"electrostatic":[60],"integrity":[61],"(a":[62],"subthreshold":[63],"slope":[64],"~80":[66],"mV/dec":[67],"drain":[70],"induced":[71],"barrier":[72],"lowering":[73],"~40":[75],"mV/V)":[76],"less":[78],"sensitivity":[79],"interface":[82],"states":[83],"density":[84],"than":[85],"implanted":[87],"III-V":[88],"surface":[89],"channel":[90,154,175],"architectures.":[91],"We":[92],"predict":[93],"very":[95],"large":[96,130],"drive":[97,141],"current":[98,142,168],"with":[99,106],"swift":[101],"onset":[102],"device":[105,116],"\u03b4-doping":[107],"backside":[110],"channel.":[113],"For":[114],"variant":[117],"without":[118],"\u03b4-doping,":[119],"we":[120],"observe":[121],"on-current":[123],"reduction":[124],"by":[125],"about":[126],"30%":[127],"influence":[131],"thickness":[133,155],"lateral":[135],"spacers":[136],"(access":[137],"regions)":[138],"due":[143],"lack":[146],"carriers.":[148],"Finally,":[149],"decrease":[151],"in":[152,157],"results":[156],"increase":[159],"higher":[162],"valleys":[163],"contribution":[164],"into":[165],"total":[167],"from":[169,178],"4%":[170],"25%":[172],"when":[173],"shrunk":[177],"2":[180],"nm.":[181]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-03T10:50:19.383937","created_date":"2016-06-24T00:00:00"}