{"id":"https://openalex.org/W1679059348","doi":"https://doi.org/10.1063/1.119708","title":"Using strained (AlxGa1\u2212x)yIn1\u2212yAszP1\u2212z system materials to improve the performance of 850 nm surface- and edge-emitting lasers","display_name":"Using strained (AlxGa1\u2212x)yIn1\u2212yAszP1\u2212z system materials to improve the performance of 850 nm surface- and edge-emitting lasers","publication_year":1997,"publication_date":"1997-08-25","ids":{"openalex":"https://openalex.org/W1679059348","doi":"https://doi.org/10.1063/1.119708","mag":"1679059348"},"language":"en","primary_location":{"id":"doi:10.1063/1.119708","doi":"https://doi.org/10.1063/1.119708","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119708","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113617189","display_name":"Terry E. Sale","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I28290843","display_name":"University of Surrey","ror":"https://ror.org/00ks66431","country_code":"GB","type":"education","lineage":["https://openalex.org/I28290843"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"T. E. Sale","raw_affiliation_strings":["Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom","institution_ids":["https://openalex.org/I28290843"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029566470","display_name":"C. Amamo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"C. Amamo","raw_affiliation_strings":["NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047296873","display_name":"Yoshitaka Ohiso","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Ohiso","raw_affiliation_strings":["NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011681325","display_name":"Takashi Kurokawa","orcid":"https://orcid.org/0000-0001-9986-4797","observed_orcids":["https://orcid.org/0000-0001-9986-4797","https://orcid.org/0009-0004-5618-0693"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kurokawa","raw_affiliation_strings":["NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Opto-Electronics Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4808,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.61537568,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"71","issue":"8","first_page":"1002","last_page":"1004"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.7925000190734863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.7925000190734863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.19480000436306,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.003700000001117587,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/compressive-strain","display_name":"compressive strain","score":0.7580000162124634},{"id":"https://openalex.org/keywords/algainas","display_name":"AlGaInAs","score":0.8410000205039978},{"id":"https://openalex.org/keywords/ingaas","display_name":"InGaAs","score":0.878000020980835},{"id":"https://openalex.org/keywords/ingaasp","display_name":"InGaAsP","score":0.9940000176429749},{"id":"https://openalex.org/keywords/quantum-wells","display_name":"quantum wells","score":0.8230000138282776},{"id":"https://openalex.org/keywords/optical-gain","display_name":"optical gain","score":0.9580000042915344},{"id":"https://openalex.org/keywords/850-nm-laser","display_name":"850 nm laser","score":0.9649999737739563},{"id":"https://openalex.org/keywords/vertical-cavity-surface-emitting-lasers","display_name":"vertical-cavity surface-emitting lasers","score":0.9319999814033508},{"id":"https://openalex.org/keywords/distributed-feedback-lasers","display_name":"distributed feedback lasers","score":0.9860000014305115},{"id":"https://openalex.org/keywords/temperature-response","display_name":"temperature sensitivity","score":0.6610000133514404},{"id":"https://openalex.org/keywords/sheet-carrier-density","display_name":"sheet carrier density","score":0.7599999904632568},{"id":"https://openalex.org/keywords/low-threshold-lasers","display_name":"low-threshold lasers","score":0.4189999997615814}],"concepts":[{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.7675292491912842},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7606304883956909},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7598345279693604},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7151013612747192},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5941994786262512},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.5397881269454956},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5109111666679382},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4635533392429352},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3771118223667145},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.24583372473716736},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07516279816627502},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.119708","doi":"https://doi.org/10.1063/1.119708","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119708","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1975015770","https://openalex.org/W2055213848","https://openalex.org/W2069316021","https://openalex.org/W2083128960","https://openalex.org/W2084526053","https://openalex.org/W2085244543","https://openalex.org/W2788533967","https://openalex.org/W2987413804","https://openalex.org/W3100928328"],"related_works":["https://openalex.org/W2044103455","https://openalex.org/W2006204209","https://openalex.org/W1976610549","https://openalex.org/W2011297589","https://openalex.org/W989093346","https://openalex.org/W2140081758","https://openalex.org/W2029678991","https://openalex.org/W2140402422","https://openalex.org/W2039302593","https://openalex.org/W2037270428"],"abstract_inverted_index":{"We":[0],"compute":[1],"the":[2,31,40,46,58,75],"optical":[3],"gain":[4],"of":[5,22,30,35,60],"various":[6],"quantum":[7],"wells":[8,21],"for":[9,81],"use":[10],"in":[11,39,45,73],"850":[12],"nm":[13],"lasers.":[14],"In":[15],"particular,":[16],"we":[17],"investigate":[18],"compressively":[19],"strained":[20],"AlGaInAs,":[23],"InGaAs,":[24],"or":[25],"InGaAsP":[26],"without":[27],"any":[28],"assumptions":[29],"material":[32],"quality.":[33],"Reductions":[34],"up":[36],"to":[37],"43%":[38],"radiative":[41],"current":[42],"and":[43,64,78,84],"24%":[44],"sheet":[47],"carrier":[48],"density":[49],"can":[50],"be":[51],"expected,":[52],"compared":[53],"with":[54],"GaAs/AlGaAs":[55],"wells.":[56],"For":[57],"case":[59],"vertical-cavity":[61],"surface-emitting":[62],"lasers":[63],"distributed":[65],"feedback":[66],"lasers,":[67],"compressive":[68],"strain":[69],"is":[70],"particularly":[71],"attractive":[72],"reducing":[74],"temperature":[76],"sensitivity":[77],"fabrication":[79],"tolerances":[80],"low":[82],"threshold":[83],"efficient":[85],"operation.":[86]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-27T08:07:27.782135","created_date":"2016-06-24T00:00:00"}