{"id":"https://openalex.org/W166734813","doi":null,"title":"Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)","display_name":"Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)","publication_year":1998,"publication_date":"1998-01-01","ids":{"openalex":"https://openalex.org/W166734813","mag":"166734813"},"language":"en","primary_location":{"id":"pmh:oai:ir.semi.ac.cn:172111/13023","doi":null,"is_oa":false,"landing_page_url":"http://ir.semi.ac.cn/handle/172111/13024","pdf_url":null,"source":{"id":"https://openalex.org/S7407064283","display_name":"SEMI-IR","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG .Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) ,REVISTA MEXICANA DE FISICA,1998,44(0):85-88","raw_type":"\u671f\u520a\u8bba\u6587"},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"http://ir.semi.ac.cn/handle/172111/13024","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110692603","display_name":"L.-F. Zou","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zou Lf","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031239520","display_name":"Acosta-Ortiz Se","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Acosta-Ortiz Se","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027396786","display_name":"Zou Lx","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zou Lx","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005913478","display_name":"Regalado Le","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Regalado Le","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084510971","display_name":"Sun Dz","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sun Dz","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5066771573","display_name":"Z. G. Wang","orcid":"https://orcid.org/0000-0001-8256-2848","observed_orcids":["https://orcid.org/0000-0001-8256-2848"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wang Zg","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.00751437,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"44","issue":"3","first_page":"85","last_page":"88"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.7422000169754028,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.7422000169754028,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.20100000500679016,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.040699999779462814,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boron-diffusion","display_name":"boron diffusion","score":0.9869999885559082},{"id":"https://openalex.org/keywords/germanium-ion-implantation","display_name":"germanium implantation","score":0.8040000200271606},{"id":"https://openalex.org/keywords/bf2-ion-implantation","display_name":"BF2 implantation","score":0.9279999732971191},{"id":"https://openalex.org/keywords/annealing-behavior","display_name":"annealing behavior","score":0.6740000247955322},{"id":"https://openalex.org/keywords/ion-implantation-damage","display_name":"ion implantation damage","score":0.515999972820282},{"id":"https://openalex.org/keywords/ge-diffusion","display_name":"Ge diffusion","score":0.40799999237060547},{"id":"https://openalex.org/keywords/boron-concentration-profile","display_name":"boron concentration profile","score":0.5690000057220459},{"id":"https://openalex.org/keywords/double-crystal-x-ray-diffraction","display_name":"double-crystal X-ray diffraction","score":0.7279999852180481}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.8848851919174194},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.7535408735275269},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7200498580932617},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.6925487518310547},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.5855719447135925},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.5628296136856079},{"id":"https://openalex.org/C74080474","wikidata":"https://www.wikidata.org/wiki/Q7305975","display_name":"Redistribution (election)","level":3,"score":0.5473159551620483},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.5448477268218994},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.5250831842422485},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5039476752281189},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.4816119074821472},{"id":"https://openalex.org/C2909539053","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary Ion Mass Spectroscopy","level":3,"score":0.46590763330459595},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4489091634750366},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.3900306224822998},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15961536765098572},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12138396501541138},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1107344925403595},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09251564741134644},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06457903981208801},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C94625758","wikidata":"https://www.wikidata.org/wiki/Q7163","display_name":"Politics","level":2,"score":0.0},{"id":"https://openalex.org/C199539241","wikidata":"https://www.wikidata.org/wiki/Q7748","display_name":"Law","level":1,"score":0.0},{"id":"https://openalex.org/C17744445","wikidata":"https://www.wikidata.org/wiki/Q36442","display_name":"Political science","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"pmh:oai:ir.semi.ac.cn:172111/13023","doi":null,"is_oa":false,"landing_page_url":"http://ir.semi.ac.cn/handle/172111/13024","pdf_url":null,"source":{"id":"https://openalex.org/S7407064283","display_name":"SEMI-IR","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG .Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) ,REVISTA MEXICANA DE FISICA,1998,44(0):85-88","raw_type":"\u671f\u520a\u8bba\u6587"},{"id":"pmh:oai:ir.semi.ac.cn:172111/15054","doi":null,"is_oa":false,"landing_page_url":"http://ir.semi.ac.cn/handle/172111/15055","pdf_url":null,"source":{"id":"https://openalex.org/S7407064283","display_name":"SEMI-IR","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG .Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) .\u89c1\uff1aSOCIEDAD MEXICANA DE FISICA .REVISTA MEXICANA DE FISICA, 44,APARTADO POSTAL 70-348, COYOACAN 04511, MEXICO ,1998,85-88","raw_type":"\u4f1a\u8bae\u8bba\u6587"},{"id":"mag:166734813","doi":null,"is_oa":true,"landing_page_url":"http://ir.semi.ac.cn/handle/172111/13024","pdf_url":null,"source":{"id":"https://openalex.org/S198822434","display_name":"Revista Mexicana de F\u00edsica","issn_l":"0035-001X","issn":["0035-001X","2683-2224"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","latindex","norway-1","poland-20","russia-white-list-2","scielo"],"host_organization":"https://openalex.org/P4323253378","host_organization_name":"Mexican Society of Physics","host_organization_lineage":["https://openalex.org/P4323253378"],"host_organization_lineage_names":["Mexican Society of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Revista Mexicana de F\u00edsica","raw_type":null}],"best_oa_location":{"id":"mag:166734813","doi":null,"is_oa":true,"landing_page_url":"http://ir.semi.ac.cn/handle/172111/13024","pdf_url":null,"source":{"id":"https://openalex.org/S198822434","display_name":"Revista Mexicana de F\u00edsica","issn_l":"0035-001X","issn":["0035-001X","2683-2224"],"is_oa":true,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","latindex","norway-1","poland-20","russia-white-list-2","scielo"],"host_organization":"https://openalex.org/P4323253378","host_organization_name":"Mexican Society of Physics","host_organization_lineage":["https://openalex.org/P4323253378"],"host_organization_lineage_names":["Mexican Society of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Revista Mexicana de F\u00edsica","raw_type":null},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4250799564","https://openalex.org/W4243361974","https://openalex.org/W2093637641","https://openalex.org/W1965464118","https://openalex.org/W7037197760","https://openalex.org/W2005492402","https://openalex.org/W1995340939","https://openalex.org/W2000766245","https://openalex.org/W2102990663","https://openalex.org/W1527575495"],"abstract_inverted_index":{"The":[0,26,61,118],"annealing":[1,30,70,92],"behavior":[2],"of":[3,51,64,111],"Si":[4,65,116],"implanted":[5],"with":[6],"Ge":[7,52,81],"and":[8,20,47,53,78,108],"then":[9],"BF2":[10],"has":[11,56,88],"been":[12,89],"characterized":[13],"by":[14,45,80],"double":[15],"crystal":[16],"X-ray":[17,119],"diffraction":[18,120],"(DCXRD)":[19],"secondary":[21],"ion":[22],"mass":[23],"spectroscopy":[24],"(SIMS).":[25],"results":[27],"show":[28],"that":[29],"at":[31,71,128],"600":[32],"degrees":[33,73,97,130],"C":[34,74,131],"for":[35,75,132],"60":[36,76,133],"minutes":[37,77,134],"can":[38],"only":[39],"remove":[40],"a":[41,105],"little":[42],"damage":[43],"induced":[44],"implantation":[46],"nearly":[48],"no":[49],"redistribution":[50],"B":[54,99,112,145],"atoms":[55,113],"occurred":[57],"during":[58],"the":[59,115,125,144],"annealing.":[60],"initial":[62],"crystallinity":[63],"is":[66],"fully":[67],"recovered":[68],"after":[69],"950":[72],"accompanied":[79],"diffusion.":[82],"Very":[83],"shallow":[84],"boron":[85],"junction":[86],"depth":[87],"formed.":[90],"When":[91],"temperature":[93],"rises":[94],"to":[95,104,143],"1050":[96,129],"C,":[98],"diffusion":[100,107],"enhances,":[101],"which":[102,139],"leads":[103],"deep":[106],"good":[109],"distribution":[110],"into":[114],"substrate.":[117],"(004)":[121],"rocking":[122],"curves":[123],"from":[124],"samples":[126],"annealed":[127],"display":[135],"two":[136],"SiGe":[137],"peaks,":[138],"may":[140],"be":[141],"related":[142],"concentration":[146],"profiles.":[147]},"counts_by_year":[],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2016-06-24T00:00:00"}