{"id":"https://openalex.org/W1665645693","doi":"https://doi.org/10.1063/1.3049611","title":"Dielectric and structural properties of thin SrHfO3 layers on TiN","display_name":"Dielectric and structural properties of thin SrHfO3 layers on TiN","publication_year":2008,"publication_date":"2008-12-22","ids":{"openalex":"https://openalex.org/W1665645693","doi":"https://doi.org/10.1063/1.3049611","mag":"1665645693"},"language":"en","primary_location":{"id":"doi:10.1063/1.3049611","doi":"https://doi.org/10.1063/1.3049611","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3049611","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085655176","display_name":"Grzegorz \u0141upina","orcid":"https://orcid.org/0000-0002-2197-2488","observed_orcids":["https://orcid.org/0000-0002-2197-2488"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Lupina","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010403620","display_name":"Grzegorz Koz\u0142owski","orcid":"https://orcid.org/0000-0002-2025-007X","observed_orcids":["https://orcid.org/0000-0002-2025-007X"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Koz\u0142owski","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081587399","display_name":"J. D\u0105browski","orcid":"https://orcid.org/0000-0003-0088-5390","observed_orcids":["https://orcid.org/0000-0003-0088-5390"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Dabrowski","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":null,"display_name":"P. Dudek","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Dudek","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054294412","display_name":"G. Lippert","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Lippert","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110140175","display_name":"H.\u2010J. M\u00fcssig","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H.-J. M\u00fcssig","raw_affiliation_strings":["IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I92894754"],"apc_list":null,"apc_paid":null,"fwci":4.0817,"has_fulltext":false,"cited_by_count":40,"citation_normalized_percentile":{"value":0.93140343,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"93","issue":"25","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5259000062942505,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.5259000062942505,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.46630001068115234,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/srhfo3","display_name":"SrHfO3","score":0.8849999904632568},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.5910000205039978},{"id":"https://openalex.org/keywords/tin-substrate","display_name":"TiN substrate","score":0.7360000014305115},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.8450000286102295},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.9950000047683716},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9589999914169312},{"id":"https://openalex.org/keywords/memory-capacitors","display_name":"memory capacitors","score":0.7940000295639038},{"id":"https://openalex.org/keywords/vacancy-like-defects","display_name":"vacancy-like defects","score":0.875},{"id":"https://openalex.org/keywords/titanium-contamination","display_name":"titanium contamination","score":0.9390000104904175},{"id":"https://openalex.org/keywords/first-principles-calculations","display_name":"first-principles calculations","score":0.7570000290870667}],"concepts":[{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.789764940738678},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7878203988075256},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.7598592042922974},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7375891804695129},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7365726828575134},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6829814910888672},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6585774421691895},{"id":"https://openalex.org/C168651791","wikidata":"https://www.wikidata.org/wiki/Q211569","display_name":"Permittivity","level":3,"score":0.4839242100715637},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.477115660905838},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.42032328248023987},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4088480472564697},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37506696581840515},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3714182376861572},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.22910508513450623},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2231159210205078},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1667318344116211},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.14876142144203186},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.14637655019760132},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1430799663066864},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06298652291297913},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05308845639228821},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.3049611","doi":"https://doi.org/10.1063/1.3049611","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3049611","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W19543119","https://openalex.org/W253779177","https://openalex.org/W1480019731","https://openalex.org/W1491839902","https://openalex.org/W1567280784","https://openalex.org/W1652142197","https://openalex.org/W1963613586","https://openalex.org/W1981827421","https://openalex.org/W1984781048","https://openalex.org/W1997868664","https://openalex.org/W1998320671","https://openalex.org/W2002547935","https://openalex.org/W2003265539","https://openalex.org/W2024803671","https://openalex.org/W2026212801","https://openalex.org/W2031882613","https://openalex.org/W2042616847","https://openalex.org/W2058644004","https://openalex.org/W2086854034","https://openalex.org/W2093417831","https://openalex.org/W2116313887","https://openalex.org/W2162767749","https://openalex.org/W2267902368","https://openalex.org/W3101781882"],"related_works":["https://openalex.org/W2069582928","https://openalex.org/W2003265539","https://openalex.org/W2011679832","https://openalex.org/W2045529556","https://openalex.org/W2085666284","https://openalex.org/W2334814898","https://openalex.org/W2167981225","https://openalex.org/W300971949","https://openalex.org/W2331247383","https://openalex.org/W1990245281"],"abstract_inverted_index":{"We":[0,39],"studied":[1],"several":[2],"properties":[3],"of":[4,16,43,56,63],"thin":[5],"amorphous":[6],"and":[7,27,50,66],"polycrystalline":[8,35],"SrHfO3":[9,21,36],"layers":[10],"on":[11,47,53],"TiN":[12],"in":[13],"the":[14,23,41,44,54,60],"context":[15],"memory":[17],"capacitor":[18],"applications.":[19],"Amorphous":[20],"has":[22],"dielectric":[24],"constant":[25],"\u03ba=21":[26],"is":[28],"transformed":[29],"upon":[30],"rapid":[31],"thermal":[32],"annealing":[33,45],"into":[34],"with":[37],"\u03ba=35.":[38],"discuss":[40],"influence":[42],"treatment":[46],"leakage":[48],"currents,":[49],"briefly":[51],"discuss,":[52],"basis":[55],"ab":[57],"initio":[58],"calculations,":[59],"possible":[61],"role":[62],"vacancylike":[64],"defects":[65],"Ti":[67],"contamination.":[68]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":8}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}