{"id":"https://openalex.org/W1663273381","doi":"https://doi.org/10.1109/vlsic.1995.520690","title":"A novel sense amplifier for flexible voltage operation NAND flash memories","display_name":"A novel sense amplifier for flexible voltage operation NAND flash memories","publication_year":2002,"publication_date":"2002-11-19","ids":{"openalex":"https://openalex.org/W1663273381","doi":"https://doi.org/10.1109/vlsic.1995.520690","mag":"1663273381"},"language":"en","primary_location":{"id":"doi:10.1109/vlsic.1995.520690","doi":"https://doi.org/10.1109/vlsic.1995.520690","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.1995.520690","pdf_url":null,"source":{"id":"https://openalex.org/S4393918263","display_name":"Symposium on VLSI Circuits","issn_l":"2166-9600","issn":["2166-9600"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Digest of Technical Papers., Symposium on VLSI Circuits.","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090578339","display_name":"Hiroshi Nakamura","orcid":"https://orcid.org/0009-0005-6505-1903","observed_orcids":["https://orcid.org/0009-0005-6505-1903"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Nakamura","raw_affiliation_strings":["ULSI Research Laboratories, Toshiba Research and Development Center, Kawasaki, Japan","[ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Research Laboratories, Toshiba Research and Development Center, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111676830","display_name":"J. Miyamoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J. Miyamoto","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108839389","display_name":"K. Imamiya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Imamiya","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":null,"display_name":"Y. Iwata","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Iwata","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Semiconductor Device Eng. Laboratory, Toshiba Corporation, Kawasaki, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":1.4224,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.79134675,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"71","last_page":"72"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.4207000136375427,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.4207000136375427,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.3564000129699707,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.12520000338554382,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"sense amplifier","score":0.9459999799728394},{"id":"https://openalex.org/keywords/nand-flash-memory","display_name":"NAND flash memory","score":0.9980000257492065},{"id":"https://openalex.org/keywords/noise-immunity","display_name":"noise immunity","score":0.9900000095367432},{"id":"https://openalex.org/keywords/flash-memory-cards","display_name":"flash memory cards","score":0.6669999957084656},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.6850000023841858}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.811610996723175},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.7449655532836914},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6951286792755127},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.6724926233291626},{"id":"https://openalex.org/C163980746","wikidata":"https://www.wikidata.org/wiki/Q378210","display_name":"EPROM","level":2,"score":0.6665304899215698},{"id":"https://openalex.org/C27699510","wikidata":"https://www.wikidata.org/wiki/Q205908","display_name":"EEPROM","level":2,"score":0.601998507976532},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5226866006851196},{"id":"https://openalex.org/C185177783","wikidata":"https://www.wikidata.org/wiki/Q3332814","display_name":"Megabit","level":2,"score":0.4739527702331543},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4692779779434204},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.4461275339126587},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4095556139945984},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3478853702545166},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.29609304666519165},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.26763617992401123},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1876067817211151},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.1393982172012329},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11632567644119263},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsic.1995.520690","doi":"https://doi.org/10.1109/vlsic.1995.520690","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsic.1995.520690","pdf_url":null,"source":{"id":"https://openalex.org/S4393918263","display_name":"Symposium on VLSI Circuits","issn_l":"2166-9600","issn":["2166-9600"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Digest of Technical Papers., Symposium on VLSI Circuits.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1921542996","https://openalex.org/W2098316686","https://openalex.org/W2135210684","https://openalex.org/W4239679342","https://openalex.org/W6680362104"],"related_works":["https://openalex.org/W4415708786","https://openalex.org/W2971399159","https://openalex.org/W1526883135","https://openalex.org/W2162415926","https://openalex.org/W2132573794","https://openalex.org/W2742033977","https://openalex.org/W2371698025","https://openalex.org/W2009370695","https://openalex.org/W1556896910","https://openalex.org/W2606266972"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3,34],"new":[4],"bit-by-bit":[5],"verify":[6],"circuit":[7],"for":[8],"application":[9],"in":[10,72,81,88],"NAND":[11],"flash":[12,51,64],"memories.":[13,65],"The":[14,44,66],"Sense":[15],"Amplifier":[16],"(S/A)":[17],"employed":[18],"confers":[19],"two":[20],"benefits:":[21],"flexible":[22],"power":[23],"supply":[24],"voltage":[25],"(ex.":[26],"3":[27],"V":[28],"or":[29,54],"5":[30],"V)":[31],"operation":[32],"with":[33,90],"high":[35],"noise":[36],"immunity":[37],"and":[38,56],"an":[39],"intelligent":[40],"page":[41],"copy":[42],"function.":[43],"benefits":[45],"are":[46],"very":[47],"useful":[48],"to":[49],"the":[50,58,73,77,83,91],"memory":[52],"card":[53],"system":[55],"accelerate":[57],"replacement":[59],"of":[60,76],"magnetic":[61],"memories":[62],"by":[63],"S/A":[67,84],"has":[68],"been":[69],"successfully":[70],"implemented":[71],"commercial":[74],"version":[75],"32":[78],"Mbit":[79],"NAND-EEPROM,":[80],"which":[82],"is":[85],"newly":[86],"introduced":[87],"comparison":[89],"prototype":[92],"version.":[93]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-06-24T00:00:00"}