{"id":"https://openalex.org/W1641346264","doi":null,"title":"Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD","display_name":"Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD","publication_year":1987,"publication_date":"1987-01-01","ids":{"openalex":"https://openalex.org/W1641346264","mag":"1641346264"},"language":"en","primary_location":{"id":"pmh:oai:casi.ntrs.nasa.gov:19880000884","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/2060/19880000884","pdf_url":"http://hdl.handle.net/2060/19880000884","source":{"id":"https://openalex.org/S4306402118","display_name":"NASA Technical Reports Server (NASA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210124779","host_organization_name":"National Aeronautics and Space Administration","host_organization_lineage":["https://openalex.org/I4210124779"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"CASI","raw_type":"E-3792"},"volume":null,"type":"article","indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/2060/19880000884","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026251408","display_name":"Irving N. Weinberg","orcid":"https://orcid.org/0000-0001-8564-2982","observed_orcids":["https://orcid.org/0000-0001-8564-2982"]},"institutions":[{"id":"https://openalex.org/I2799786008","display_name":"Glenn Research Center","ror":"https://ror.org/059fqnc42","country_code":"US","type":"facility","lineage":["https://openalex.org/I2799786008","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I. Weinberg","raw_affiliation_strings":["NASA Lewis Research Center Cleveland, OH., United States"],"raw_orcid":"https://orcid.org/0000-0001-8564-2982","affiliations":[{"raw_affiliation_string":"NASA Lewis Research Center Cleveland, OH., United States","institution_ids":["https://openalex.org/I2799786008"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068991662","display_name":"C. K. Swartz","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. K. Swartz","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5087389862","display_name":"R. E. Hart","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. E. Hart","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13626339,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"88","issue":null,"first_page":"10266","last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.9678000211715698,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.9678000211715698,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.011900000274181366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14327","display_name":"Advanced Energy Technologies and Civil Engineering Innovations","score":0.00419999985024333,"subfield":{"id":"https://openalex.org/subfields/2104","display_name":"Nuclear Energy and Engineering"},"field":{"id":"https://openalex.org/fields/21","display_name":"Energy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-solar-cells","display_name":"GaAs solar cells","score":0.8759999871253967},{"id":"https://openalex.org/keywords/n-p-heterojunction","display_name":"n-p heterojunction","score":0.7580000162124634},{"id":"https://openalex.org/keywords/p-n-heterojunction","display_name":"p-n heterojunction","score":0.9990000128746033},{"id":"https://openalex.org/keywords/electron-irradiation","display_name":"electron irradiation","score":0.9380000233650208},{"id":"https://openalex.org/keywords/proton-irradiation","display_name":"proton irradiation","score":1.0},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.6359999775886536},{"id":"https://openalex.org/keywords/radiation-hardness","display_name":"radioresistance","score":0.6919999718666077},{"id":"https://openalex.org/keywords/series-resistance","display_name":"series resistance","score":0.8270000219345093},{"id":"https://openalex.org/keywords/fill-factor-loss","display_name":"fill factor loss","score":0.8029999732971191},{"id":"https://openalex.org/keywords/mocvd-growth","display_name":"MOCVD growth","score":0.6150000095367432},{"id":"https://openalex.org/keywords/fluence-dependence","display_name":"fluence dependence","score":0.5849999785423279}],"concepts":[{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.8521500825881958},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6714032292366028},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6623005270957947},{"id":"https://openalex.org/C22078206","wikidata":"https://www.wikidata.org/wiki/Q1418023","display_name":"Fluence","level":3,"score":0.642967939376831},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.6077470779418945},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.5882753133773804},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.500507116317749},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.45433905720710754},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4231113791465759},{"id":"https://openalex.org/C105163801","wikidata":"https://www.wikidata.org/wiki/Q12103748","display_name":"Electron beam processing","level":3,"score":0.418226957321167},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3757091760635376},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.20479071140289307},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.19887596368789673},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15802797675132751},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12886843085289001},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.06569823622703552},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:casi.ntrs.nasa.gov:19880000884","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/2060/19880000884","pdf_url":"http://hdl.handle.net/2060/19880000884","source":{"id":"https://openalex.org/S4306402118","display_name":"NASA Technical Reports Server (NASA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210124779","host_organization_name":"National Aeronautics and Space Administration","host_organization_lineage":["https://openalex.org/I4210124779"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"CASI","raw_type":"E-3792"},{"id":"mag:1641346264","doi":null,"is_oa":false,"landing_page_url":"https://ntrs.nasa.gov/api/citations/19880000884/downloads/19880000884.pdf","pdf_url":null,"source":{"id":"https://openalex.org/S4306520500","display_name":"NASA STI/Recon Technical Report N","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"NASA STI/Recon Technical Report N","raw_type":null}],"best_oa_location":{"id":"pmh:oai:casi.ntrs.nasa.gov:19880000884","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/2060/19880000884","pdf_url":"http://hdl.handle.net/2060/19880000884","source":{"id":"https://openalex.org/S4306402118","display_name":"NASA Technical Reports Server (NASA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210124779","host_organization_name":"National Aeronautics and Space Administration","host_organization_lineage":["https://openalex.org/I4210124779"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"CASI","raw_type":"E-3792"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1641346264.pdf","grobid_xml":"https://content.openalex.org/works/W1641346264.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1651552600","https://openalex.org/W2034247093","https://openalex.org/W7010282496","https://openalex.org/W2072926843","https://openalex.org/W7020050246","https://openalex.org/W1983528799","https://openalex.org/W7014769964","https://openalex.org/W7033556711","https://openalex.org/W1680312583","https://openalex.org/W6966474432"],"abstract_inverted_index":{"State-of-the-art":[0],"n/p":[1,46,53,80],"and":[2,20,24,62],"p/n":[3,38,92],"heteroface":[4],"GaAs":[5],"cells,":[6],"processed":[7],"by":[8,16],"metal":[9],"organic":[10],"chemical":[11],"vapor":[12],"deposition,":[13],"were":[14,40],"irradiated":[15],"1":[17],"MeV":[18,22],"electrons":[19],"37":[21],"protons":[23],"their":[25],"performance":[26],"determined":[27],"as":[28],"a":[29],"function":[30],"of":[31,90,100],"fluence.":[32],"It":[33],"was":[34,55],"found":[35],"that":[36,85],"the":[37,45,52,65,69,79,83,86,91],"cells":[39,54,81,93],"more":[41],"radiation":[42],"resistant":[43],"than":[44],"cells.":[47],"The":[48,71],"increased":[49],"loss":[50,73],"in":[51,59,64,74,103],"attributed":[56],"to":[57],"increases":[58],"series":[60],"resistance":[61],"losses":[63],"p-region":[66],"resulting":[67],"from":[68],"irradiation.":[70],"greater":[72],"fill":[75],"factor":[76],"observed":[77,88],"for":[78],"introduces":[82],"possibility":[84],"presently":[87],"superiority":[89],"may":[94],"not":[95],"be":[96],"an":[97],"intrinsic":[98],"property":[99],"this":[101],"configuration":[102],"GaAs.":[104]},"counts_by_year":[],"updated_date":"2026-11-01T11:40:01.658920","created_date":"2016-06-24T00:00:00"}