{"id":"https://openalex.org/W1601899296","doi":"https://doi.org/10.1109/iedm.2002.1175994","title":"15-nm-thick Si channel wall vertical double-gate MOSFET","display_name":"15-nm-thick Si channel wall vertical double-gate MOSFET","publication_year":2003,"publication_date":"2003-06-26","ids":{"openalex":"https://openalex.org/W1601899296","doi":"https://doi.org/10.1109/iedm.2002.1175994","mag":"1601899296"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2002.1175994","doi":"https://doi.org/10.1109/iedm.2002.1175994","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2002.1175994","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Digest. International Electron Devices Meeting,","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007514853","display_name":"Meishoku Masahara","orcid":"https://orcid.org/0000-0003-2160-5730","observed_orcids":["https://orcid.org/0000-0003-2160-5730"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Masahara","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100729078","display_name":"Takashi Matsukawa","orcid":"https://orcid.org/0000-0003-0106-6485","observed_orcids":["https://orcid.org/0000-0003-0106-6485"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Matsukawa","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101520477","display_name":"Keisuke ISHII","orcid":"https://orcid.org/0000-0002-6493-5249","observed_orcids":["https://orcid.org/0000-0002-6493-5249"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Ishii","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012237499","display_name":"Yongxun Liu","orcid":"https://orcid.org/0000-0002-3321-2830","observed_orcids":["https://orcid.org/0000-0002-3321-2830"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yongxun Liu","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111598182","display_name":"H. Tanoue","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Tanoue","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021937162","display_name":"Kunihiro Sakamoto","orcid":"https://orcid.org/0000-0002-4598-4539","observed_orcids":["https://orcid.org/0000-0002-4598-4539"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Sakamoto","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110966515","display_name":"T. Sekigawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Sekigawa","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080290956","display_name":"H. Yamauchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Yamauchi","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057105848","display_name":"S. Kanemaru","orcid":"https://orcid.org/0000-0002-0570-589X","observed_orcids":["https://orcid.org/0000-0002-0570-589X"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Kanemaru","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5114127603","display_name":"Emi Suzuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"E. Suzuki","raw_affiliation_strings":["Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namelectronics Research Institute, National Institute for Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan","institution_ids":["https://openalex.org/I73613424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I73613424"],"apc_list":null,"apc_paid":null,"fwci":7.3497,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.97776739,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"949","last_page":"951"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9057999849319458,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9057999849319458,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.08669999986886978,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tmah-etching","display_name":"TMAH etching","score":0.8489999771118164},{"id":"https://openalex.org/keywords/silicon-etching","display_name":"silicon etching","score":0.7039999961853027},{"id":"https://openalex.org/keywords/bulk-silicon-substrate","display_name":"bulk silicon substrate","score":0.6790000200271606},{"id":"https://openalex.org/keywords/cmos-scaling","display_name":"CMOS scaling","score":0.6140000224113464}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8053710460662842},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7449415922164917},{"id":"https://openalex.org/C2780127704","wikidata":"https://www.wikidata.org/wiki/Q420868","display_name":"Tetramethylammonium hydroxide","level":2,"score":0.732778787612915},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.7195789813995361},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.657207190990448},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6314314007759094},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5936649441719055},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5923711657524109},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.41484305262565613},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35311031341552734},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3367130756378174},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16157278418540955},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.08470204472541809},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2002.1175994","doi":"https://doi.org/10.1109/iedm.2002.1175994","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2002.1175994","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Digest. International Electron Devices Meeting,","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2011977039","https://openalex.org/W2167611023"],"related_works":["https://openalex.org/W2061262996","https://openalex.org/W2127450222","https://openalex.org/W1989864270","https://openalex.org/W2148300050","https://openalex.org/W2120461063","https://openalex.org/W2013220981","https://openalex.org/W2460984487","https://openalex.org/W2034194680","https://openalex.org/W2469646900","https://openalex.org/W2095575535"],"abstract_inverted_index":{"Double-gate":[0],"(DG)":[1],"MOSFET":[2],"structures":[3],"have":[4],"been":[5],"regarded":[6],"as":[7],"promising":[8],"candidates":[9],"for":[10,48,53,60],"scalable":[11],"CMOS":[12,32],"devices.":[13],"Among":[14],"DG":[15,65],"concept":[16],"devices,":[17],"a":[18,69,84],"vertical":[19,55,64],"type":[20],"has":[21],"attracted":[22],"considerable":[23],"attention":[24],"due":[25],"to":[26],"its":[27,35],"process":[28],"compatibility":[29],"with":[30,37,68],"conventional":[31],"technology":[33],"and":[34],"suitability":[36],"bulk":[38],"Si":[39,51,82],"substrates.":[40],"The":[41],"critical":[42],"issue":[43],"is":[44],"fabrication":[45],"technology,":[46],"especially":[47],"the":[49,54,61,76],"ultra-thin":[50],"wall":[52,72],"transistor.":[56],"This":[57],"paper":[58],"demonstrates,":[59],"first":[62],"time,":[63],"MOSFETs":[66],"('IMOSFETs')":[67],"15-nm-thick":[70],"channel":[71],"fabricated":[73],"by":[74],"using":[75],"newly-discovered":[77],"ion-bombardment-retarded":[78],"etching":[79],"(IBRE)":[80],"of":[81],"in":[83],"tetramethylammonium":[85],"hydroxide":[86],"(TMAH)":[87],"solution.":[88]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-10-26T11:51:55.731654","created_date":"2016-06-24T00:00:00"}