{"id":"https://openalex.org/W1576880066","doi":"https://doi.org/10.1109/cstic.2015.7153488","title":"Pyramid size control and its effects on the performance of silicon heterojunction solar cells","display_name":"Pyramid size control and its effects on the performance of silicon heterojunction solar cells","publication_year":2015,"publication_date":"2015-03-01","ids":{"openalex":"https://openalex.org/W1576880066","doi":"https://doi.org/10.1109/cstic.2015.7153488","mag":"1576880066"},"language":"en","primary_location":{"id":"doi:10.1109/cstic.2015.7153488","doi":"https://doi.org/10.1109/cstic.2015.7153488","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cstic.2015.7153488","pdf_url":null,"source":{"id":"https://openalex.org/S4363607993","display_name":"China Semiconductor Technology International Conference (CSTIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 China Semiconductor Technology International Conference","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074675836","display_name":"Xiaorang Tian","orcid":"https://orcid.org/0000-0003-3278-4383","observed_orcids":["https://orcid.org/0000-0003-3278-4383"]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaorang Tian","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052811737","display_name":"Qi Wang","orcid":"https://orcid.org/0000-0002-6327-0468","observed_orcids":["https://orcid.org/0000-0002-6327-0468"]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Wang","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065988005","display_name":"Hongtao Hou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongtao Hou","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Guangyu Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guangyu Chen","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100998067","display_name":"Guanchao Zhao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guanchao Zhao","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Rong Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rong Yang","raw_affiliation_strings":["ENN Science & Technology Development Co., Ltd, Langfang, China","ENN Science & Technology Development Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Science & Technology Development Co., Ltd, Langfang, China","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Science & Technology Development Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100601085","display_name":"Liwei Li","orcid":"https://orcid.org/0000-0002-2887-4979","observed_orcids":["https://orcid.org/0000-0002-2887-4979"]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liwei Li","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yuan Meng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuan Meng","raw_affiliation_strings":["ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111604417","display_name":"Ted Guo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210100528","display_name":"ENN (China)","ror":"https://ror.org/018a8yy17","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210100528"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ted Guo","raw_affiliation_strings":["ENN Solar Energy Co., Ltd","ENN Solar Energy Co., Ltd., Langfang 065001, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ENN Solar Energy Co., Ltd","institution_ids":["https://openalex.org/I4210100528"]},{"raw_affiliation_string":"ENN Solar Energy Co., Ltd., Langfang 065001, China","institution_ids":["https://openalex.org/I4210100528"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210100528"],"apc_list":null,"apc_paid":null,"fwci":0.4163,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.47125045,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-heterojunction-solar-cells","display_name":"silicon heterojunction solar cells","score":0.9929999709129333},{"id":"https://openalex.org/keywords/surface-texturing","display_name":"surface texturing","score":0.7630000114440918},{"id":"https://openalex.org/keywords/etching","display_name":"etching","score":0.3930000066757202},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.796999990940094},{"id":"https://openalex.org/keywords/minority-carrier-lifetime","display_name":"minority carrier lifetime","score":0.8420000076293945},{"id":"https://openalex.org/keywords/reflectivity","display_name":"reflectivity","score":0.9710000157356262},{"id":"https://openalex.org/keywords/surface-morphology","display_name":"surface morphology","score":0.5889999866485596}],"concepts":[{"id":"https://openalex.org/C142575187","wikidata":"https://www.wikidata.org/wiki/Q3358290","display_name":"Pyramid (geometry)","level":2,"score":0.8302106857299805},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6518701314926147},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6513485908508301},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.59868985414505},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5773524641990662},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5262234210968018},{"id":"https://openalex.org/C2780824857","wikidata":"https://www.wikidata.org/wiki/Q58803","display_name":"Solar cell","level":2,"score":0.4793701469898224},{"id":"https://openalex.org/C168907044","wikidata":"https://www.wikidata.org/wiki/Q7834431","display_name":"Transition point","level":2,"score":0.4494858682155609},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.36938905715942383},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3273158669471741},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11441093683242798},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cstic.2015.7153488","doi":"https://doi.org/10.1109/cstic.2015.7153488","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cstic.2015.7153488","pdf_url":null,"source":{"id":"https://openalex.org/S4363607993","display_name":"China Semiconductor Technology International Conference (CSTIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 China Semiconductor Technology International Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.75,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2017839264","https://openalex.org/W2018853685","https://openalex.org/W2020643862","https://openalex.org/W2026166860","https://openalex.org/W2030628913","https://openalex.org/W2083618381","https://openalex.org/W2094616228"],"related_works":["https://openalex.org/W2921649130","https://openalex.org/W3158125667","https://openalex.org/W2921535106","https://openalex.org/W2509385860","https://openalex.org/W2805253127","https://openalex.org/W2740837119","https://openalex.org/W1980243406","https://openalex.org/W2793718149","https://openalex.org/W3086071362","https://openalex.org/W4402790973"],"abstract_inverted_index":{"This":[0],"paper":[1],"explores":[2],"the":[3,14,37,46,50,65,69,75,102],"formation":[4],"process":[5,16],"of":[6,17,40,111,123],"surface":[7],"pyramid":[8,27,59,77,124],"morphologies":[9],"and":[10,63,109],"etching":[11,66],"characteristics":[12],"during":[13],"texturing":[15],"silicon":[18],"heterojunction":[19],"(SHJ)":[20],"solar":[21,113],"cells.":[22],"Our":[23],"research":[24],"discovered":[25],"that":[26,90],"size":[28,60,78],"followed":[29],"a":[30,120],"linear":[31],"correlation":[32],"with":[33],"etch":[34,47],"amount":[35,67],"at":[36,68],"transition":[38,51,70],"point":[39],"planes":[41],"{100}":[42],"to":[43,57,85],"{111}":[44],"as":[45],"rate":[48],"reached":[49],"point.":[52,71],"Several":[53],"techniques":[54],"were":[55,115],"developed":[56],"control":[58],"by":[61,129],"monitoring":[62],"adjusting":[64],"Using":[72],"this":[73],"approach,":[74],"average":[76],"was":[79,126],"successfully":[80],"controlled":[81],"from":[82],"0.5":[83],"\u03bcm":[84,96],"12":[86,100],"\u03bcm.":[87],"We":[88],"concluded":[89],"for":[91],"pyramids":[92],"smaller":[93],"than":[94,99],"1":[95],"or":[97],"greater":[98],"\u03bcm,":[101],"light":[103],"reflectance,":[104],"minority":[105],"carrier":[106],"lifetime":[107],"(MCLT),":[108],"performance":[110],"SHJ":[112],"cells":[114],"adversely":[116],"affected.":[117],"In":[118],"conclusion,":[119],"desirable":[121],"range":[122],"sizes":[125],"empirically":[127],"determined":[128],"our":[130],"investigation.":[131]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}