{"id":"https://openalex.org/W1482796321","doi":null,"title":"Gate-tunable control in graphene semiconductive channel","display_name":"Gate-tunable control in graphene semiconductive channel","publication_year":2012,"publication_date":"2012-07-04","ids":{"openalex":"https://openalex.org/W1482796321","mag":"1482796321"},"language":"en","primary_location":{"id":"mag:1482796321","doi":null,"is_oa":false,"landing_page_url":"https://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6294912","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064020117","display_name":"Kazuhito Tsukagoshi","orcid":"https://orcid.org/0000-0001-9710-2692","observed_orcids":["https://orcid.org/0000-0001-9710-2692"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]},{"id":"https://openalex.org/I4405286814","display_name":"Research Center for Materials Nanoarchitectonics","ror":"https://ror.org/03614j208","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhito Tsukagoshi","raw_affiliation_strings":["WPI-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan"],"raw_orcid":"https://orcid.org/0000-0001-9710-2692","affiliations":[{"raw_affiliation_string":"WPI-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan","institution_ids":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006805497","display_name":"Hisao Miyazaki","orcid":"https://orcid.org/0000-0001-9302-9977","observed_orcids":["https://orcid.org/0000-0001-9302-9977"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]},{"id":"https://openalex.org/I4405286814","display_name":"Research Center for Materials Nanoarchitectonics","ror":"https://ror.org/03614j208","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hisao Miyazaki","raw_affiliation_strings":["WPI-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan"],"raw_orcid":"https://orcid.org/0000-0001-9302-9977","affiliations":[{"raw_affiliation_string":"WPI-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan","institution_ids":["https://openalex.org/I205401836","https://openalex.org/I4405286814"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100376086","display_name":"Songlin Li","orcid":"https://orcid.org/0000-0002-3995-9580","observed_orcids":["https://orcid.org/0000-0002-3995-9580"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S.-L. Li","raw_affiliation_strings":["ICYS-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ICYS-MANA, NIMS, Namiki, Tsukuba, Ibaraki 305-0047, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":null,"display_name":"A. Kanda","orcid":"https://orcid.org/0000-0002-7376-6467","observed_orcids":["https://orcid.org/0000-0002-7376-6467"]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Kanda","raw_affiliation_strings":["Institute of Physics and Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan"],"raw_orcid":"https://orcid.org/0000-0002-7376-6467","affiliations":[{"raw_affiliation_string":"Institute of Physics and Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5070926343","display_name":"Shu Nakaharai","orcid":"https://orcid.org/0000-0002-6329-3942","observed_orcids":["https://orcid.org/0000-0002-6329-3942"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shu Nakaharai","raw_affiliation_strings":["GNC, AIST, Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":"https://orcid.org/0000-0002-6329-3942","affiliations":[{"raw_affiliation_string":"GNC, AIST, Tsukuba, Ibaraki 305-8569, Japan","institution_ids":["https://openalex.org/I73613424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.05185019,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"305","last_page":"308"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0066999997943639755,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bilayer-graphene","display_name":"bilayer graphene","score":0.9929999709129333},{"id":"https://openalex.org/keywords/band-gap-tuning","display_name":"band gap tuning","score":0.8109999895095825},{"id":"https://openalex.org/keywords/dual-gate-structure","display_name":"dual-gate structure","score":0.6079999804496765},{"id":"https://openalex.org/keywords/graphene-transistors","display_name":"graphene transistors","score":0.8040000200271606},{"id":"https://openalex.org/keywords/logic-gates","display_name":"logic gates","score":0.9020000100135803},{"id":"https://openalex.org/keywords/atomically-thin-semiconductors","display_name":"atomically thin semiconductors","score":0.9020000100135803},{"id":"https://openalex.org/keywords/graphene-electronics","display_name":"graphene electronics","score":0.9380000233650208}],"concepts":[{"id":"https://openalex.org/C143401881","wikidata":"https://www.wikidata.org/wiki/Q4156171","display_name":"Bilayer graphene","level":3,"score":0.8679879307746887},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.7816365957260132},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7407686710357666},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6386715769767761},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.6081834435462952},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5829599499702454},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5748197436332703},{"id":"https://openalex.org/C192157962","wikidata":"https://www.wikidata.org/wiki/Q4087243","display_name":"Bilayer","level":3,"score":0.5383618474006653},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5345382690429688},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5111866593360901},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5045667886734009},{"id":"https://openalex.org/C140807948","wikidata":"https://www.wikidata.org/wiki/Q4148055","display_name":"Graphene nanoribbons","level":3,"score":0.46971338987350464},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.4617675840854645},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4183720052242279},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.41075581312179565},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2035108208656311},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15828081965446472},{"id":"https://openalex.org/C41625074","wikidata":"https://www.wikidata.org/wiki/Q176088","display_name":"Membrane","level":2,"score":0.08508935570716858},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0834926962852478},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06901773810386658},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.056819260120391846},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:1482796321","doi":null,"is_oa":false,"landing_page_url":"https://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6294912","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2090763687","https://openalex.org/W2948918565","https://openalex.org/W2093771986","https://openalex.org/W211621065","https://openalex.org/W2766271388","https://openalex.org/W1967986301","https://openalex.org/W2113467957","https://openalex.org/W7096124766","https://openalex.org/W1989506279","https://openalex.org/W2055365855"],"abstract_inverted_index":{"We":[0],"have":[1],"realized":[2,68],"a":[3,34,51],"practical":[4],"wide":[5,44],"band":[6,41,45],"gap":[7,12,46],"in":[8],"bilayer":[9,24,56],"graphene.":[10,25],"The":[11,43],"was":[13],"induced":[14],"by":[15,20],"an":[16,73],"electric":[17,36],"field":[18,37],"applied":[19],"dual-gate":[21],"sandwiching":[22],"the":[23,40],"A":[26],"self-assembled":[27],"gate":[28,53],"insulator":[29],"enabled":[30],"us":[31],"to":[32],"apply":[33],"large":[35],"which":[38],"enhanced":[39],"gap.":[42],"allowed":[47],"for":[48],"operation":[49],"of":[50,55],"logic":[52],"composed":[54],"graphene":[57,63],"transistors.":[58],"These":[59],"results":[60],"predict":[61],"that":[62],"electronics":[64],"will":[65],"possibly":[66],"be":[67],"as":[69],"emerging":[70],"transistors":[71],"with":[72],"atomically":[74],"thin":[75],"semiconductor.":[76]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-24T09:50:30.924529","created_date":"2016-06-24T00:00:00"}