{"id":"https://openalex.org/W1482653576","doi":"https://doi.org/10.1088/1674-4926/34/7/074005","title":"A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors","display_name":"A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors","publication_year":2013,"publication_date":"2013-07-01","ids":{"openalex":"https://openalex.org/W1482653576","doi":"https://doi.org/10.1088/1674-4926/34/7/074005","mag":"1482653576"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/34/7/074005","doi":"https://doi.org/10.1088/1674-4926/34/7/074005","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/34/7/074005","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100904177","display_name":"Li-Yuan Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liyuan Yang","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Shan Ai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shan Ai","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019590439","display_name":"Yonghe Chen","orcid":"https://orcid.org/0000-0001-5957-3872","observed_orcids":["https://orcid.org/0000-0001-5957-3872"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yonghe Chen","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102061267","display_name":"Mengyi Cao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mengyi Cao","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024084717","display_name":"Kai Zhang","orcid":"https://orcid.org/0000-0002-2984-5985","observed_orcids":["https://orcid.org/0000-0002-2984-5985"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Zhang","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100321027","display_name":"Xiaohua Ma","orcid":"https://orcid.org/0000-0002-1331-6253","observed_orcids":["https://orcid.org/0000-0002-1331-6253"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaohua Ma","raw_affiliation_strings":["School of Technical Physics, Xidian University, Xi'an 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Technical Physics, Xidian University, Xi'an 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100750974","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0002-8081-2919","observed_orcids":["https://orcid.org/0000-0002-8081-2919","https://orcid.org/0000-0001-7876-8878","https://orcid.org/0009-0004-2378-727X","https://orcid.org/0009-0008-5312-4601"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices  School of Microelectronics  Xidian University  Xi'an 710071  China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.6236,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.64567721,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"34","issue":"7","first_page":"074005","last_page":"074005"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.003100000089034438,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/self-heating-effect","display_name":"self-heating","score":0.9670000076293945},{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.8859999775886536},{"id":"https://openalex.org/keywords/multi-finger-transistors","display_name":"multi-finger transistors","score":0.8489999771118164},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"junction temperature","score":0.796999990940094},{"id":"https://openalex.org/keywords/electrothermal-modeling","display_name":"electro-thermal modeling","score":0.906000018119812},{"id":"https://openalex.org/keywords/joule-heating","display_name":"Joule heating","score":0.8629999756813049},{"id":"https://openalex.org/keywords/layout-design","display_name":"layout design","score":0.746999979019165},{"id":"https://openalex.org/keywords/device-cooling","display_name":"device cooling","score":0.36000001430511475}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7167046666145325},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6594396233558655},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.655178964138031},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.48253485560417175},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3585239052772522},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24053078889846802},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10667258501052856},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/1674-4926/34/7/074005","doi":"https://doi.org/10.1088/1674-4926/34/7/074005","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/34/7/074005","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},{"id":"mag:2336221330","doi":null,"is_oa":false,"landing_page_url":"http://www.cqvip.com/QK/94689X/201307/46451991.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306544928","display_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1965785718","https://openalex.org/W1973156100","https://openalex.org/W2043463741","https://openalex.org/W2097434765","https://openalex.org/W2103125572","https://openalex.org/W2103250050","https://openalex.org/W2118926188","https://openalex.org/W2141186835","https://openalex.org/W2265230926"],"related_works":["https://openalex.org/W2265230926","https://openalex.org/W4406940487","https://openalex.org/W4308583238","https://openalex.org/W2105786771","https://openalex.org/W3111633595","https://openalex.org/W2783786346","https://openalex.org/W2153921625","https://openalex.org/W2744005571","https://openalex.org/W4389936788","https://openalex.org/W2066687657"],"abstract_inverted_index":{"Self-heating":[0],"in":[1],"multi-finger":[2,108],"AlGaN/GaN":[3,109],"high-electron-mobility":[4],"transistors":[5],"(HEMTs)":[6],"is":[7,61,111],"investigated":[8],"by":[9],"measurements":[10],"and":[11,31,72],"modeling":[12],"of":[13,35,52,58,93,100,107],"device":[14,39,60,120],"junction":[15],"temperature":[16,33,41,57,106],"under":[17],"steady-state":[18],"operation.":[19],"Measurements":[20],"are":[21],"carried":[22],"out":[23],"using":[24,63,113],"micro-Raman":[25,85],"scattering":[26],"to":[27,43,83],"obtain":[28],"the":[29,36,44,49,59,73,84,91,98,104,114],"detailed":[30],"accurate":[32],"distribution":[34],"device.":[37],"The":[38,55,78],"peak":[40],"corresponds":[42],"high":[45],"field":[46],"region":[47],"at":[48],"drain":[50],"side":[51],"gate":[53],"edge.":[54],"channel":[56,105],"modeled":[62],"a":[64],"combined":[65],"electro-thermal":[66,116],"model":[67,89],"considering":[68],"2DEG":[69],"transport":[70],"characteristics":[71],"Joule":[74],"heating":[75],"power":[76],"distribution.":[77],"results":[79],"reveal":[80],"excellent":[81],"correlation":[82],"measurements,":[86],"validating":[87],"our":[88],"for":[90,119],"design":[92,102],"better":[94],"cooled":[95],"structures.":[96],"Furthermore,":[97],"influence":[99],"layout":[101],"on":[103],"HEMTs":[110],"studied":[112],"proposed":[115],"model,":[117],"allowing":[118],"optimization.":[121]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}