{"id":"https://openalex.org/W14426518","doi":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","title":"Activation of Mg after Implantation in si-InP by means of EB-RTA","display_name":"Activation of Mg after Implantation in si-InP by means of EB-RTA","publication_year":1996,"publication_date":"1996-01-01","ids":{"openalex":"https://openalex.org/W14426518","doi":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","mag":"14426518"},"language":"en","primary_location":{"id":"doi:10.1016/b978-0-444-82334-2.50177-5","doi":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","pdf_url":null,"source":{"id":"https://openalex.org/S4306463230","display_name":"Elsevier eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Ion Beam Modification of Materials","raw_type":"book-chapter"},"volume":{"id":"https://openalex.org/W4206117706","display_name":"Ion Beam Modification of Materials"},"type":"book-chapter","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"C. Maurer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114090438","display_name":"Goethe University Frankfurt","ror":"https://ror.org/04cvxnb49","country_code":"DE","type":"education","lineage":["https://openalex.org/I114090438"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"C. Maurer","raw_affiliation_strings":["Institut f\u00fcr Kernphysik, Johann Wolfgang Goethe-Universit\u00e4t, August-Euler-Str. 6, D-60486 Frankfurt am Main, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Kernphysik, Johann Wolfgang Goethe-Universit\u00e4t, August-Euler-Str. 6, D-60486 Frankfurt am Main, Germany","institution_ids":["https://openalex.org/I114090438"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026586679","display_name":"R. Kallweit","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210093367","display_name":"Deutsche Telekom (Germany)","ror":"https://ror.org/00m8prc86","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210093367"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Kallweit","raw_affiliation_strings":["Forschungszentrum der Deutschen Telekom, Am Kavalleriesand 3, D-64295 Darmstadt, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Forschungszentrum der Deutschen Telekom, Am Kavalleriesand 3, D-64295 Darmstadt, Germany","institution_ids":["https://openalex.org/I4210093367"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044289180","display_name":"\u039a. Bethge","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114090438","display_name":"Goethe University Frankfurt","ror":"https://ror.org/04cvxnb49","country_code":"DE","type":"education","lineage":["https://openalex.org/I114090438"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K. Bethge","raw_affiliation_strings":["Institut f\u00fcr Kernphysik, Johann Wolfgang Goethe-Universit\u00e4t, August-Euler-Str. 6, D-60486 Frankfurt am Main, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Kernphysik, Johann Wolfgang Goethe-Universit\u00e4t, August-Euler-Str. 6, D-60486 Frankfurt am Main, Germany","institution_ids":["https://openalex.org/I114090438"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.01061571,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"899","last_page":"902"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9042999744415283,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9042999744415283,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.05050000175833702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.02879999950528145,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnesium-activation","display_name":"magnesium activation","score":0.7559999823570251},{"id":"https://openalex.org/keywords/semi-insulating-inp","display_name":"semi-insulating InP","score":0.8289999961853027},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.9330000281333923},{"id":"https://openalex.org/keywords/acceptor-concentration","display_name":"acceptor concentration","score":0.6200000047683716},{"id":"https://openalex.org/keywords/implantation-dose","display_name":"implantation dose","score":0.7699999809265137},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.8989999890327454}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7477614879608154},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6935880780220032},{"id":"https://openalex.org/C207948433","wikidata":"https://www.wikidata.org/wiki/Q685487","display_name":"Tempering","level":2,"score":0.6560802459716797},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.6019836664199829},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.48788881301879883},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.4440484046936035},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.3588099479675293},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.3380114436149597},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3318071961402893},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25035360455513},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2331329882144928},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2199234664440155},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/b978-0-444-82334-2.50177-5","doi":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/b978-0-444-82334-2.50177-5","pdf_url":null,"source":{"id":"https://openalex.org/S4306463230","display_name":"Elsevier eBooks","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Ion Beam Modification of Materials","raw_type":"book-chapter"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1991301959","https://openalex.org/W2004223352","https://openalex.org/W2034201940","https://openalex.org/W2095573079","https://openalex.org/W2171573708"],"related_works":["https://openalex.org/W2056410629","https://openalex.org/W1980315879","https://openalex.org/W2026223574","https://openalex.org/W2007625037","https://openalex.org/W2317684891","https://openalex.org/W2158725922","https://openalex.org/W2144582658","https://openalex.org/W2750140361","https://openalex.org/W1994525261","https://openalex.org/W2564978949"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}