{"id":"https://openalex.org/A5137977482","orcid":null,"observed_orcids":[],"display_name":"Anhar Bhuiyan","raw_author_names":["Anhar Bhuiyan","Bhuiyan, A F M Anhar Uddin","Bhuiyan, Anhar"],"full_name":"Anhar Bhuiyan","works_count":11,"cited_by_count":7,"summary_stats":{"2yr_mean_citedness":0.7,"h_index":2,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5137977482","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I133738476","ror":"https://ror.org/03hamhx47","display_name":"University of Massachusetts Lowell","country_code":"US","type":"education","lineage":["https://openalex.org/I133738476"]},"years":[2026]}],"last_known_institutions":[{"id":"https://openalex.org/I133738476","ror":"https://ror.org/03hamhx47","display_name":"University of Massachusetts Lowell","country_code":"US","type":"education","lineage":["https://openalex.org/I133738476"]}],"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","count":11,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":7,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":6,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":4,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","count":2,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":0.0003963,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":2.75e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","value":1.73e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","value":1.54e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":1.45e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.8370000123977661},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.7330999970436096},{"id":"57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","score":0.6886000037193298},{"id":"113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","score":0.48510000109672546},{"id":"64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","score":0.41530001163482666}],"counts_by_year":[{"year":2021,"works_count":1,"oa_works_count":1,"cited_by_count":0},{"year":2024,"works_count":2,"oa_works_count":2,"cited_by_count":0},{"year":2025,"works_count":1,"oa_works_count":1,"cited_by_count":0},{"year":2026,"works_count":7,"oa_works_count":7,"cited_by_count":7}],"display_name_alternatives":["Anhar Bhuiyan","Bhuiyan, A F M Anhar Uddin","Bhuiyan, Anhar"],"block_key":"a bhuiyan","works_api_url":"https://api.openalex.org/works?filter=author.id:A5137977482","awards_count":0,"updated_date":"2026-11-07T12:08:38","created_date":"2025-10-10T00:00:00"}