{"id":"https://openalex.org/A5135202005","orcid":"https://orcid.org/0000-0002-5731-6247","observed_orcids":["https://orcid.org/0000-0002-5731-6247"],"display_name":"S. Intekhab Amin","raw_author_names":["S Intekhab Amin","S. Intekhab Amin"],"full_name":"S. Intekhab Amin","works_count":3,"cited_by_count":1,"summary_stats":{"2yr_mean_citedness":0.5,"h_index":1,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5135202005","orcid":"https://orcid.org/0000-0002-5731-6247","observed_orcids":["https://orcid.org/0000-0002-5731-6247"]},"affiliations":[{"institution":{"id":"https://openalex.org/I59475050","ror":"https://ror.org/00pnhhv55","display_name":"Jamia Millia Islamia","country_code":"IN","type":"education","lineage":["https://openalex.org/I59475050"]},"years":[2026]}],"last_known_institutions":[{"id":"https://openalex.org/I59475050","ror":"https://ror.org/00pnhhv55","display_name":"Jamia Millia Islamia","country_code":"IN","type":"education","lineage":["https://openalex.org/I59475050"]}],"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":2,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","count":1,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","value":3.45e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","value":5.7e-06,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":4.4e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":4e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","value":3.6e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.8184999823570251},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.5925999879837036},{"id":"18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","score":0.4616999924182892},{"id":"119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","score":0.45879998803138733},{"id":"24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","score":0.40400001406669617}],"counts_by_year":[{"year":2015,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2026,"works_count":2,"oa_works_count":0,"cited_by_count":1}],"display_name_alternatives":["S Intekhab Amin","S. Intekhab Amin"],"block_key":"s amin","works_api_url":"https://api.openalex.org/works?filter=author.id:A5135202005","updated_date":"2026-11-01T11:00:13","created_date":"2026-05-05T00:00:00"}
