{"id":"https://openalex.org/A5125463563","orcid":null,"observed_orcids":[],"display_name":"Yuanmeng Xiang","raw_author_names":["Yuanmeng Xiang"],"full_name":"Yuanmeng Xiang","works_count":3,"cited_by_count":0,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":0,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5125463563","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I149594827","ror":"https://ror.org/05s92vm98","display_name":"Xidian University","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]},"years":[2026]}],"last_known_institutions":[{"id":"https://openalex.org/I149594827","ror":"https://ror.org/05s92vm98","display_name":"Xidian University","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":3,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":3,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","count":1,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","count":1,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":1.38e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":1.3e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","value":8.2e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","value":7.7e-06,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","value":6.5e-06,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.7888000011444092},{"id":"204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","score":0.5677000284194946},{"id":"137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","score":0.501800000667572},{"id":"113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","score":0.37059998512268066},{"id":"114834414","wikidata":"https://www.wikidata.org/wiki/Q15477170","display_name":"Thermal management of electronic devices and systems","score":0.3515999913215637}],"counts_by_year":[{"year":2026,"works_count":3,"oa_works_count":2,"cited_by_count":0}],"display_name_alternatives":["Yuanmeng Xiang"],"block_key":"y xiang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5125463563","updated_date":"2026-10-10T12:59:14","created_date":"2026-02-10T00:00:00"}