{"id":"https://openalex.org/A5121927770","orcid":"https://orcid.org/0009-0008-5928-5115","observed_orcids":["https://orcid.org/0009-0008-5928-5115"],"display_name":"Z. L. Zhang","raw_author_names":["Z. L. Zhang"],"full_name":"Z. L. Zhang","works_count":1,"cited_by_count":4,"summary_stats":{"2yr_mean_citedness":4.0,"h_index":1,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5121927770","orcid":"https://orcid.org/0009-0008-5928-5115","observed_orcids":["https://orcid.org/0009-0008-5928-5115"]},"affiliations":[{"institution":{"id":"https://openalex.org/I204983213","ror":"https://ror.org/01yqg2h08","display_name":"Harbin Institute of Technology","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]},"years":[2026]}],"last_known_institutions":[{"id":"https://openalex.org/I204983213","ror":"https://ror.org/01yqg2h08","display_name":"Harbin Institute of Technology","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","count":1,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","value":8.8e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","value":4.6e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","value":4.3e-06,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","score":0.5637000203132629},{"id":"105163801","wikidata":"https://www.wikidata.org/wiki/Q12103748","display_name":"Electron beam processing","score":0.2849000096321106},{"id":"108599883","wikidata":"https://www.wikidata.org/wiki/Q3554730","display_name":"Variable-range hopping","score":0.28369998931884766},{"id":"106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","score":0.27639999985694885},{"id":"119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","score":0.26080000400543213}],"counts_by_year":[{"year":2026,"works_count":1,"oa_works_count":0,"cited_by_count":4}],"display_name_alternatives":["Z. L. Zhang"],"block_key":"z zhang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5121927770","updated_date":"2026-10-10T12:59:14","created_date":"2026-01-05T00:00:00"}