{"id":"https://openalex.org/A5111610522","orcid":null,"observed_orcids":[],"display_name":"Laegu Kang","raw_author_names":["L. Kang","L.-G. Kang","L.G. Kang","LaeGu Kang","Laegu Kang"],"full_name":"Laegu Kang","works_count":37,"cited_by_count":1800,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":16,"i10_index":19},"ids":{"openalex":"https://openalex.org/A5111610522","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I1333370159","ror":"https://ror.org/01hafxd32","display_name":"Motorola (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]},"years":[2003,2002]},{"institution":{"id":"https://openalex.org/I1341412227","ror":"https://ror.org/05hh8d621","display_name":"IBM (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},"years":[2012]},{"institution":{"id":"https://openalex.org/I35662394","ror":"https://ror.org/02h0ps145","display_name":"GlobalFoundries (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]},"years":[2017,2016,2015]},{"institution":{"id":"https://openalex.org/I86519309","ror":"https://ror.org/00hj54h04","display_name":"The University of Texas at Austin","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]},"years":[2003,2002,2000,1999]}],"last_known_institutions":[{"id":"https://openalex.org/I35662394","ror":"https://ror.org/02h0ps145","display_name":"GlobalFoundries (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":37,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","count":21,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","count":17,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","count":16,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":8,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","value":0.0001743,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","value":0.0001679,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","value":7.79e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":7.67e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","value":1.76e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.9309816360473633},{"id":"119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","score":0.6658473610877991},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.658201277256012},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.42068955302238464},{"id":"165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","score":0.41034454107284546}],"counts_by_year":[{"year":1990,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":1999,"works_count":5,"oa_works_count":0,"cited_by_count":0},{"year":2000,"works_count":6,"oa_works_count":0,"cited_by_count":0},{"year":2002,"works_count":9,"oa_works_count":0,"cited_by_count":0},{"year":2003,"works_count":4,"oa_works_count":0,"cited_by_count":0},{"year":2005,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2007,"works_count":3,"oa_works_count":0,"cited_by_count":0},{"year":2008,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2012,"works_count":1,"oa_works_count":0,"cited_by_count":48},{"year":2013,"works_count":0,"oa_works_count":0,"cited_by_count":34},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":57},{"year":2015,"works_count":2,"oa_works_count":1,"cited_by_count":69},{"year":2016,"works_count":3,"oa_works_count":1,"cited_by_count":54},{"year":2017,"works_count":1,"oa_works_count":0,"cited_by_count":54},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":44},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":38},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":34},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":28},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":25},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":35},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":22},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":22},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":22}],"display_name_alternatives":["L. Kang","L.-G. Kang","L.G. Kang","LaeGu Kang","Laegu Kang"],"block_key":"l kang","works_api_url":"https://api.openalex.org/works?filter=author.id:A5111610522","updated_date":"2026-11-07T12:08:38","created_date":"2016-06-24T00:00:00"}