{"id":"https://openalex.org/A5111592766","orcid":null,"observed_orcids":[],"display_name":"J BENBRAHIM","raw_author_names":["J BENBRAHIM"],"full_name":"J BENBRAHIM","works_count":1,"cited_by_count":0,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":0,"i10_index":0},"ids":{"openalex":"https://openalex.org/A5111592766","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I1294671590","ror":"https://ror.org/02feahw73","display_name":"Centre National de la Recherche Scientifique","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},"years":[1998]},{"institution":{"id":"https://openalex.org/I42731748","ror":"https://ror.org/00qn2rd91","display_name":"National Institute of Applied Science and Technology","country_code":"TN","type":"facility","lineage":["https://openalex.org/I42731748"]},"years":[1998]},{"institution":{"id":"https://openalex.org/I48430043","ror":"https://ror.org/050jn9y42","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]},"years":[1998]}],"last_known_institutions":[{"id":"https://openalex.org/I1294671590","ror":"https://ror.org/02feahw73","display_name":"Centre National de la Recherche Scientifique","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I42731748","ror":"https://ror.org/00qn2rd91","display_name":"National Institute of Applied Science and Technology","country_code":"TN","type":"facility","lineage":["https://openalex.org/I42731748"]},{"id":"https://openalex.org/I48430043","ror":"https://ror.org/050jn9y42","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]}],"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":1,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","count":1,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":2.1e-06,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":2e-06,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","value":1.1e-06,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","score":0.3484645485877991},{"id":"171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","score":0.325957715511322},{"id":"185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","score":0.181298166513443},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.10132253170013428},{"id":"178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","score":0.0}],"counts_by_year":[{"year":1998,"works_count":1,"oa_works_count":0,"cited_by_count":0}],"display_name_alternatives":["J BENBRAHIM"],"block_key":"j benbrahim","works_api_url":"https://api.openalex.org/works?filter=author.id:A5111592766","awards_count":0,"updated_date":"2026-10-10T12:59:14","created_date":"2016-06-24T00:00:00"}