{"id":"https://openalex.org/A5111503389","orcid":null,"observed_orcids":[],"display_name":"Byron Ho","raw_author_names":["B. Ho","Byron Ho"],"full_name":"Byron Ho","works_count":21,"cited_by_count":621,"summary_stats":{"2yr_mean_citedness":0.0,"h_index":9,"i10_index":8},"ids":{"openalex":"https://openalex.org/A5111503389","orcid":null,"observed_orcids":[]},"affiliations":[{"institution":{"id":"https://openalex.org/I1333370159","ror":"https://ror.org/01hafxd32","display_name":"Motorola (United States)","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]},"years":[2002]},{"institution":{"id":"https://openalex.org/I95457486","ror":"https://ror.org/01an7q238","display_name":"University of California, Berkeley","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]},"years":[2013,2012,2011,2010]}],"last_known_institutions":null,"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","count":20,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","count":20,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","count":12,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","count":4,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","count":1,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"topic_share":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","value":7.41e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","value":4.57e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","value":4.22e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","value":4.14e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","value":8.1e-06,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"x_concepts":[{"id":"192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","score":0.8620884418487549},{"id":"49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","score":0.7044612169265747},{"id":"119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","score":0.4835953116416931},{"id":"127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","score":0.40325814485549927},{"id":"165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","score":0.3399752676486969}],"counts_by_year":[{"year":1999,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2002,"works_count":1,"oa_works_count":0,"cited_by_count":0},{"year":2010,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2011,"works_count":2,"oa_works_count":0,"cited_by_count":0},{"year":2012,"works_count":13,"oa_works_count":1,"cited_by_count":13},{"year":2013,"works_count":1,"oa_works_count":0,"cited_by_count":18},{"year":2014,"works_count":0,"oa_works_count":0,"cited_by_count":32},{"year":2015,"works_count":0,"oa_works_count":0,"cited_by_count":28},{"year":2016,"works_count":0,"oa_works_count":0,"cited_by_count":15},{"year":2017,"works_count":1,"oa_works_count":0,"cited_by_count":18},{"year":2018,"works_count":0,"oa_works_count":0,"cited_by_count":72},{"year":2019,"works_count":0,"oa_works_count":0,"cited_by_count":60},{"year":2020,"works_count":0,"oa_works_count":0,"cited_by_count":66},{"year":2021,"works_count":0,"oa_works_count":0,"cited_by_count":53},{"year":2022,"works_count":0,"oa_works_count":0,"cited_by_count":56},{"year":2023,"works_count":0,"oa_works_count":0,"cited_by_count":48},{"year":2024,"works_count":0,"oa_works_count":0,"cited_by_count":42},{"year":2025,"works_count":0,"oa_works_count":0,"cited_by_count":40},{"year":2026,"works_count":0,"oa_works_count":0,"cited_by_count":43}],"display_name_alternatives":["B. Ho","Byron Ho"],"block_key":"b ho","works_api_url":"https://api.openalex.org/works?filter=author.id:A5111503389","awards_count":0,"awards_api_url":"https://api.openalex.org/awards?filter=investigators.author.id:A5111503389","updated_date":"2026-11-10T14:30:39","created_date":"2016-06-24T00:00:00"}